component

MSESD0511T

Public Made by Adom

by adom

MSKSEMI ESD Protection Devices, DFN1006-2. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

componenttvs-fuse-board level protectionmsesd0511tfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

MSESD0511T

MSKSEMI · ESD Protection Devices · DFN1006-2

MSESD0511T from MSKSEMI, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Terminal 1 of an unpolarised fuse; either orientation.
2 2 passive Terminal 2 of an unpolarised fuse; either orientation.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package DFN1006-2
Category TVS/Fuse/Board Level Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Electrostatic Discharge Voltage (contact discharge) VESD 20 kV IEC 61000-4-2; Contact Discharge (printed ±20 kV) 2
Electrostatic Discharge Voltage (air discharge) VESD 25 kV IEC 61000-4-2; Air Discharge (printed ±25 kV) 2
Peak Pulse Power PPP 40 W tP = 8/20 µs 2
Rated Peak Pulse Current IPPM 2.5 A tP = 8/20 µs 2
Ambient Temperature Range TA -55 150 ℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Reverse Working Voltage VRWM 5 V TA = 25 °C 2
Breakdown Voltage VBR 5.6 9 V IR = 1mA; TA = 25 °C 2
Reverse Leakage Current IR 100 nA VRWM = 5V; TA = 25 °C 2
Clamping Voltage VC 13 V IPP = 1A, tP = 8/20µs 2
Clamping Voltage VC 16 V IPP = 2.5A, tP = 8/20µs 2
Junction Capacitance CJ 3.5 4 pF VR = 0V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: MSESD0511T
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2 (KiCad packages3D, STEP)
  • 3D model files: msesd0511t-etched.step / msesd0511t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); msesd0511t.step / msesd0511t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 65683b0391a4c312, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary two-terminal convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF