component
IRF7751TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7751TRPBF-VB
VBsemi Elec · MOSFETs · TSSOP-8
IRF7751TRPBF-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of P-channel MOSFET 1; the device is rated for VDS = -30 V. |
| 2 | S1 | passive | Source of P-channel MOSFET 1; S1 is bonded to pin 3 in the top-view pinout. |
| 3 | S1 | passive | Source of P-channel MOSFET 1; S1 is bonded to pin 2 in the top-view pinout. |
| 4 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 5 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 6 | S2 | passive | Source of P-channel MOSFET 2; S2 is bonded to pin 7 in the top-view pinout. |
| 7 | S2 | passive | Source of P-channel MOSFET 2; S2 is bonded to pin 6 in the top-view pinout. |
| 8 | D2 | passive | Drain of P-channel MOSFET 2; the device is rated for VDS = -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSSOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5.2 | A | TA = 25 °C, 10 s | 1 | ||
| Continuous Drain Current | ID | -4.1 | A | TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current | ID | -4.2 | A | TA = 70 °C, 10 s | 1 | ||
| Continuous Drain Current | ID | -3.6 | A | TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 10 µs pulse width | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -1 | A | TA = 25 °C, 10 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -0.7 | A | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 1.14 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum Power Dissipation | PD | 0.83 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 0.73 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum Power Dissipation | PD | 0.53 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| On-State Drain Current | ID(on) | -15 | A | VDS ≥ -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.036 | Ω | VGS = -10 V, ID = -4.7 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.055 | Ω | VGS = -4.5 V, ID = -3.8 A | 2 | ||
| Diode Forward Voltage | VSD | -0.74 | -1.1 | V | IS = -1.0 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 13 | 20 | nC | VDS = -15 V, VGS = -4.5 V, ID = -4.7 A | 2 | |
| Turn-On Delay Time | td(on) | 13 | 20 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, RG = 6 Ω | 2 | |
| Rise Time | tr | 14 | 22 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, RG = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 52 | 80 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, RG = 6 Ω | 2 | |
| Fall Time | tf | 26 | 40 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, RG = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 40 | 60 | ns | IF = -1.0 A, dI/dt = 100 A/µs | 2 | |
| Maximum Junction-to-Ambient, 10 s | RthJA | 86 | 110 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient, Steady State | RthJA | 124 | 150 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot, Steady State | RthJF | 52 | 65 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
IRF7751TRPBF-VB - Footprint:
Package_SO:TSSOP-8_4.4x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7751trpbf-vb-etched.step/irf7751trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7751trpbf-vb.step/irf7751trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
328b22f11984e006, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).