component
STP80N240K6
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP80N240K6
STMicroelectronics · MOSFETs · TO-220
STP80N240K6 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±30 V (Table 1), and the part is listed as Zener-protected. |
| 2 | D | passive | Drain terminal, also connected to the TAB; rated 800 V drain-source breakdown (V(BR)DSS) and 16 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal, the reference for VGS; the source-drain diode is rated 16 A continuous and 35 A pulsed (Table 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) | ID | 16 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) | ID | 10 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 35 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation | PTOT | 140 | W | TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt(2) | 5 | V/ns | ISD ≤ 4 A; VDS (peak) = 400 V | 2 | ||
| Peak diode recovery current slope | di/dt(2) | 100 | A/µs | ISD ≤ 4 A; VDS (peak) = 400 V | 2 | ||
| MOSFET dv/dt ruggedness | dv/dt(3) | 120 | V/ns | VDS ≤ 640 V | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature range | TJ | -55 | 150 | °C | 2 | ||
| Avalanche current, repetitive or not repetitive | IAR | 3.3 | A | pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 200 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Thermal resistance, junction-to-case | RthJC | 0.89 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient | RthJA | 62.5 | °C/W | 2 | |||
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | VGS = 0 V, ID = 1 mA | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 800 V | 3 | ||
| Zero gate voltage drain current | IDSS | 50 | µA | VGS = 0 V, VDS = 800 V, TC = 125 °C | 3 | ||
| Gate body leakage current | IGSS | -1 | 1 | µA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 3.5 | 4 | V | VDS = VGS, ID = 100 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 197 | 220 | mΩ | VGS = 10 V, ID = 7 A | 3 | |
| Input capacitance | Ciss | 1350 | pF | VDS = 400 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Output capacitance | Coss | 20 | pF | VDS = 400 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Equivalent capacitance energy related | Co(er)(1) | 25 | pF | VDS = 0 to 640 V, VGS = 0 V | 3 | ||
| Equivalent capacitance time related | Co(tr)(2) | 139 | pF | VDS = 0 to 640 V, VGS = 0 V | 3 | ||
| Intrinsic gate resistance | RG | 1.8 | Ω | f = 1 MHz, ID = 0 A | 3 | ||
| Total gate charge | Qg | 25.9 | nC | VDD = 640 V, ID = 7 A, VGS = 0 to 10 V | 3 | ||
| Gate-source charge | Qgs | 6.9 | nC | VDD = 640 V, ID = 7 A, VGS = 0 to 10 V | 3 | ||
| Gate-drain charge | Qgd | 8.4 | nC | VDD = 640 V, ID = 7 A, VGS = 0 to 10 V | 3 | ||
| Turn-on delay time | td(on) | 16 | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Rise time | tr | 5.3 | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Turn-off delay time | td(off) | 47.8 | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Fall time | tf | 12 | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Source-drain current | ISD | 16 | A | 4 | |||
| Source-drain current (pulsed) | ISDM(1) | 35 | A | 4 | |||
| Forward on voltage | VSD(2) | 1.5 | V | ISD = 14 A, VGS = 0 V | 4 | ||
| Reverse recovery time | trr | 335 | ns | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery charge | Qrr | 5.4 | µC | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery current | IRRM | 27.5 | A | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery time | trr | 430 | ns | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 | ||
| Reverse recovery charge | Qrr | 7.4 | µC | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 | ||
| Reverse recovery current | IRRM | 28 | A | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |
CAD (KiCad official)
- Symbol:
STP80N240K6 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stp80n240k6-etched.step/stp80n240k6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp80n240k6.step/stp80n240k6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
9f1cfb42fd8c48bb, retrieved 2026-10-10, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).