component
MCQ05P10Y-TP
Public Made by Adomby adom
MCC(Micro Commercial Components) MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMCQ05P10Y-TP
MCC(Micro Commercial Components) · MOSFETs · SOP-8
MCQ05P10Y-TP from MCC(Micro Commercial Components), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, shorted with pins 2 and 3 externally; VDS rated -100V and continuous drain current -4.5A at TA=25°C. |
| 2 | S | passive | Source of the P-channel MOSFET, shorted with pins 1 and 3 externally; VDS rated -100V and continuous drain current -4.5A at TA=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, shorted with pins 1 and 2 externally; VDS rated -100V and continuous drain current -4.5A at TA=25°C. |
| 4 | G | input | Gate of the P-channel MOSFET with gate-source voltage rated ±20V and threshold VGS(th) of -1.0V min to -2.5V max. |
| 5 | D | passive | Drain of the P-channel MOSFET, connected to pins 6, 7 and 8; VDS max -100V and pulsed drain current -18A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 7 and 8; VDS max -100V and pulsed drain current -18A. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 6 and 8; VDS max -100V and pulsed drain current -18A. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 6 and 7; VDS max -100V and pulsed drain current -18A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC(Micro Commercial Components) |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -4.5 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -2.8 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | 1 | |||
| Total Power Dissipation | PD | 1.6 | W | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 56 | mJ | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 75 | °C/W | Steady-State | 1 | ||
| Thermal Resistance Junction to Lead | RθJL | 24 | °C/W | Steady-State | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS =±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-100V, VGS=0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 83 | 110 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 95 | 120 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Continuous Body Diode Current | IS | -4.5 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.3 | V | VGS=0V, IS=-3A | 2 | ||
| Reverse Recovery Time | trr | 40 | ns | IS=-5A, dIF/dt=100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 80 | nC | IS=-5A, dIF/dt=100A/μs | 2 | ||
| Input Capacitance | Ciss | 1062 | pF | VDS=-50V,VGS=0V,f=1MHz | 2 | ||
| Output Capacitance | Coss | 112 | pF | VDS=-50V,VGS=0V,f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 8.7 | pF | VDS=-50V,VGS=0V,f=1MHz | 2 | ||
| Total Gate Charge | Qg | 19 | nC | VDS=-50V,VGS=-10V,ID=-5A | 2 | ||
| Gate-Source Charge | Qgs | 3 | nC | VDS=-50V,VGS=-10V,ID=-5A | 2 | ||
| Gate-Drain Charge | Qgd | 3.5 | nC | VDS=-50V,VGS=-10V,ID=-5A | 2 | ||
| Turn-On Delay Time | td(on) | 7.4 | ns | VDD=-50V, VGS=-10V, RGEN=6Ω, ID=-5A | 2 | ||
| Turn-On Rise Time | tr | 9.3 | ns | VDD=-50V, VGS=-10V, RGEN=6Ω, ID=-5A | 2 | ||
| Turn-Off Delay Time | td(off) | 58 | ns | VDD=-50V, VGS=-10V, RGEN=6Ω, ID=-5A | 2 | ||
| Turn-Off Fall Time | tf | 19 | ns | VDD=-50V, VGS=-10V, RGEN=6Ω, ID=-5A | 2 | ||
| Gate Resistance | Rg | 9.8 | Ω | F=1 MHz, Open drain | 2 |
CAD (KiCad official)
- Symbol:
MCQ05P10Y-TP - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
mcq05p10y-tp-etched.step/mcq05p10y-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mcq05p10y-tp.step/mcq05p10y-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC(Micro Commercial Components) datasheet (6 pp, sha256
13b2c8a9d23b8f55, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).