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Contents

README

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HSN74LVC1G3157DBVR

HXY MOSFET · Analog Switches, Multiplexers · SOT-23-6L

HSN74LVC1G3157DBVR from HXY MOSFET, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Y1 bidirectional Independent input/output channel Y1, connected to Z when S is HIGH; switch voltage must stay between 0 V and VCC in enable and disable modes.
2 GND power_in Ground reference (0 V) for all voltages in the datasheet.
3 Y0 bidirectional Independent input/output channel Y0, connected to Z when S is LOW; switch voltage must stay between 0 V and VCC in enable and disable modes.
4 Z bidirectional Common input/output of the analog switch, routed to Y0 or Y1 depending on S; switch current capability is 32 mA.
5 VCC power_in Supply voltage, recommended range 1.65 V to 5.5 V (absolute maximum 6.5 V).
6 S input Digital select input with Schmitt trigger action, accepting up to 5.5 V; LOW selects Y0 and HIGH selects Y1.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-6L
Category Interface
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
supply voltage VCC -0.5 6.5 V 2
input voltage VI -0.5 6.5 V 2
input clamping current IIK -50 mA VI<-0.5V or VI>VCC+0.5V 2
switch clamping current ISK -50 50 mA VI<-0.5V or VI>VCC+0.5V 2
switch voltage VSW -0.5 V enable and disable mode 2
switch current ISW -50 50 mA VSW>-0.5V or VSW<VCC+0.5V 2
supply current ICC 100 mA 2
ground current IGND -100 mA 2
storage temperature Tstg -65 150 ℃ 2
total power dissipation Ptot 250 mW 2
soldering temperature TL 260 ℃ 10s 2
supply voltage VCC 1.65 5.5 V 3
input voltage VI 0 5.5 V 3
switch voltage VSW 0 V enable and disable mode 3
ambient temperature Tamb -40 105 ℃ 3
input transition rise and fall rate Δt/ΔV 20 ns/V VCC=1.65V to 2.7V 3
input transition rise and fall rate Δt/ΔV 10 ns/V VCC=2.7V to 5.5V 3
HIGH-level input voltage VIH 1.7 V Tamb=-40℃ to +105℃; VCC=2.3V to 2.7V 4
HIGH-level input voltage VIH 2 V Tamb=-40℃ to +105℃; VCC=3V to 3.6V 4
LOW-level input voltage VIL 0.7 V Tamb=-40℃ to +105℃; VCC=2.3V to 2.7V 4
LOW-level input voltage VIL 0.8 V Tamb=-40℃ to +105℃; VCC=3V to 3.6V 4
input leakage current II -1 1 uA Tamb=-40℃ to +105℃; pin S; VI = 5.5 V or GND; VCC = 0 V to 5.5 V 4
OFF-state leakage current IS(OFF) -0.5 0.5 uA Tamb=-40℃ to +105℃; VCC=5.5V; see Figure 3 4
ON-state leakage current IS(ON) -2 2 uA Tamb=-40℃ to +105℃; VCC=5.5V; see Figure 4 4
supply current ICC 4 uA Tamb=-40℃ to +105℃; VI=5.5V or GND; VSW=GND or VCC; VCC=1.65V to 5.5V 4
additional supply current ΔICC 500 uA Tamb=-40℃ to +105℃; pin S; VI=VCC-0.6V; VCC=5.5V; VSW=GND or VCC 4
ON resistance (peak) RON(peak) 195 Ω Tamb=-40℃ to +105℃; VI=GND to VCC; ISW=4 mA; VCC=1.65V to 1.95V 6
ON resistance (peak) RON(peak) 45 Ω Tamb=-40℃ to +105℃; VI=GND to VCC; ISW=8 mA; VCC=2.3V to 2.7V 6
ON resistance (peak) RON(peak) 38 Ω Tamb=-40℃ to +105℃; VI=GND to VCC; ISW=12 mA; VCC=2.7V 6
ON resistance (peak) RON(peak) 30 Ω Tamb=-40℃ to +105℃; VI=GND to VCC; ISW=24 mA; VCC=3V to 3.6V 6
ON resistance (peak) RON(peak) 23 Ω Tamb=-40℃ to +105℃; VI=GND to VCC; ISW=32 mA; VCC=4.5V to 5.5V 6
ON resistance (rail) RON(rail) 27 Ω Tamb=-40℃ to +105℃; VI=GND; ISW=4 mA; VCC=1.65V to 1.95V 6
ON resistance (rail) RON(rail) 24 Ω Tamb=-40℃ to +105℃; VI=GND; ISW=8 mA; VCC=2.3V to 2.7V 6
ON resistance (rail) RON(rail) 21 Ω Tamb=-40℃ to +105℃; VI=GND; ISW=12 mA; VCC=2.7V 6
ON resistance (rail) RON(rail) 18 Ω Tamb=-40℃ to +105℃; VI=GND; ISW=24 mA; VCC=3V to 3.6V 6
ON resistance (rail) RON(rail) 15 Ω Tamb=-40℃ to +105℃; VI=GND; ISW=32 mA; VCC=4.5V to 5.5V 6
propagation delay tpd 3 ns Tamb=-40℃ to +105℃; Z to Yn or Yn to Z; VCC=1.65V to 1.95V 8
propagation delay tpd 2 ns Tamb=-40℃ to +105℃; Z to Yn or Yn to Z; VCC=2.3V to 2.7V 8
propagation delay tpd 1.5 ns Tamb=-40℃ to +105℃; Z to Yn or Yn to Z; VCC=2.7V 8
propagation delay tpd 1 ns Tamb=-40℃ to +105℃; Z to Yn or Yn to Z; VCC=4.5V to 5.5V 8
enable time ten 3.1 22 ns Tamb=-40℃ to +105℃; S to Yn; VCC=1.65V to 1.95V 8
enable time ten 2.2 12.5 ns Tamb=-40℃ to +105℃; S to Yn; VCC=2.3V to 2.7V 8
enable time ten 2.1 10.5 ns Tamb=-40℃ to +105℃; S to Yn; VCC=2.7V 8
enable time ten 1.8 9 ns Tamb=-40℃ to +105℃; S to Yn; VCC=3V to 3.6V 8
enable time ten 1.5 6.1 ns Tamb=-40℃ to +105℃; S to Yn; VCC=4.5V to 5.5V 8
disable time tdis 3 11.7 ns Tamb=-40℃ to +105℃; S to Yn; VCC=1.65V to 1.95V 8
disable time tdis 2.1 7.6 ns Tamb=-40℃ to +105℃; S to Yn; VCC=2.3V to 2.7V 8
disable time tdis 2.1 6.6 ns Tamb=-40℃ to +105℃; S to Yn; VCC=2.7V 8
disable time tdis 1.7 5.9 ns Tamb=-40℃ to +105℃; S to Yn; VCC=3V to 3.6V 8
disable time tdis 1.3 4.3 ns Tamb=-40℃ to +105℃; S to Yn; VCC=4.5V to 5.5V 8
break-before-make time tb-m 0.5 ns Tamb=-40℃ to +105℃; VCC=1.65V to 1.95V 8

CAD (KiCad official)

  • Symbol: HSN74LVC1G3157DBVR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: hsn74lvc1g3157dbvr-etched.step / hsn74lvc1g3157dbvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsn74lvc1g3157dbvr.step / hsn74lvc1g3157dbvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (19 pp, sha256 1db39c7f03dbe16c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF