component
NX138AKMYL
Public Made by Adomby adom
Nexperia MOSFETs, SOT-883. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNX138AKMYL
Nexperia · MOSFETs · SOT-883
NX138AKMYL from Nexperia, in a SOT-883. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level compatible with VGS rated ±20 V (max) and threshold voltage of 0.8 V min to 1.5 V max at ID = 250 µA. |
| 2 | S | passive | Source terminal of the N-channel Trench MOSFET; continuous source current up to 0.27 A at Tamb = 25 °C. |
| 3 | D | passive | Drain; rated for VDS up to 60 V and continuous drain current of 0.27 A at VGS = 10 V, Tamb = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-883 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 60 | V | 3 | |||
| Gate-source voltage | VGS | -20 | 20 | V | Tj = 25 °C | 3 | |
| Drain current | ID | 0.27 | A | VGS = 10 V; Tamb = 25 °C | 3 | ||
| Drain current | ID | 0.17 | A | VGS = 10 V; Tamb = 100 °C | 3 | ||
| Peak drain current | IDM | 1.08 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Total power dissipation | Ptot | 340 | mW | Tamb = 25 °C; standard footprint | 3 | ||
| Total power dissipation | Ptot | 648 | mW | Tamb = 25 °C; drain pad 1 cm2 | 3 | ||
| Total power dissipation | Ptot | 2.3 | W | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | 0.27 | A | Tamb = 25 °C | 3 | ||
| Thermal resistance junction to ambient (standard footprint) | Rth(j-a) | 317 | 365 | K/W | in free air; standard footprint | 5 | |
| Thermal resistance junction to ambient (1 cm2 drain pad) | Rth(j-a) | 168 | 193 | K/W | in free air; drain pad 1 cm2 | 5 | |
| Thermal resistance junction to solder point | Rth(j-sp) | 47 | 54 | K/W | 5 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | 0.8 | 1.1 | 1.5 | V | ID = 250 µA; VDS=VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 2 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -2 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 0.5 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -0.5 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 100 | nA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -100 | nA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 2.8 | 4.2 | Ω | VGS = 10 V; ID = 0.19 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 6.2 | 9.2 | Ω | VGS = 10 V; ID = 0.19 A; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 3 | 4.5 | Ω | VGS = 5 V; ID = 0.17 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 4 | 8 | Ω | VGS = 2.5 V; ID = 0.13 A; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 0.4 | 0.6 | nC | VDS = 30 V; ID = 0.2 A; VGS = 10 V; Tj = 25 °C | 6 | |
| Source-drain voltage | VSD | 0.8 | 1.2 | V | IS = 0.26 A; VGS = 0 V; Tj = 25 °C | 6 | |
| Forward transconductance | gfs | 0.4 | S | VDS = 5 V; ID = 0.19 A; Tj = 25 °C | 6 | ||
| Gate-source charge | QGS | 0.03 | nC | VDS = 30 V; ID = 0.2 A; VGS = 10 V; Tj = 25 °C | 6 | ||
| Gate-drain charge | QGD | 0.08 | nC | VDS = 30 V; ID = 0.2 A; VGS = 10 V; Tj = 25 °C | 6 | ||
| Input capacitance | Ciss | 15 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | ||
| Output capacitance | Coss | 2 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | ||
| Reverse transfer capacitance | Crss | 1.3 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | ||
| Turn-on delay time | td(on) | 1 | ns | VDS = 30 V; ID = 0.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | ||
| Rise time | tr | 1 | ns | VDS = 30 V; ID = 0.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | ||
| Turn-off delay time | td(off) | 3 | ns | VDS = 30 V; ID = 0.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | ||
| Fall time | tf | 8 | ns | VDS = 30 V; ID = 0.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
NX138AKMYL - Footprint:
Package_TO_SOT_SMD:SOT-883 - 3D model: SOT-883, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 1.45 mm nominal SOT height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
nx138akmyl-etched.step/nx138akmyl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nx138akmyl.step/nx138akmyl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (14 pp, sha256
7127e4c0ebc228bf, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).