component
HXY5N10AI
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHXY5N10AI
HXY MOSFET · MOSFETs · SOT-23
HXY5N10AI from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement MOSFET, with VGS rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 100 V and continuous drain current ID of 5 A at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, with continuous source current IS limited to 2 A in the electrical characteristics. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | 108 | V | VGS=0V , ID=250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 110 | 125 | mΩ | VGS=10V , ID=4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 120 | 145 | mΩ | VGS=4.5V , ID=2A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 50 | uA | VDS=80V , VGS=0V , TJ=85℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Resistance | Rg | 2.3 | 4.6 | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Continuous Source Current | IS | 2 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 5 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 3.2 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 3.1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 100 | ℃/W | steady state | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 40 | ℃/W | t<10s | 1 |
CAD (KiCad official)
- Symbol:
HXY5N10AI - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hxy5n10ai-etched.step/hxy5n10ai-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy5n10ai.step/hxy5n10ai.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
3bfbb8fdacc69ae1, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).