component
DMN2025U-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMN2025U-13
Diodes Incorporated · MOSFETs · SOT-23
DMN2025U-13 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD protected by an internal gate protection diode, with VGSS rated at ±12 V and a gate threshold VGS(TH) of 0.5 to 0.9 V. |
| 2 | S | passive | Source terminal, with maximum continuous body diode forward current IS of 1.4 A. |
| 3 | D | passive | Drain terminal, with VDSS of 20 V and continuous drain current up to 5.6 A at TA = +25°C (VGS = 4.5 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -12 | 12 | V | TA = +25°C | 2 | |
| Continuous Drain Current, TA=+25°C | ID | 5.6 | A | VGS = 4.5V, Steady State, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current, TA=+70°C | ID | 4.9 | A | VGS = 4.5V, Steady State, TA = +70°C (Note 6) | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | 1.4 | A | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 40 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation (Note 5) | PD | 0.8 | W | Note 5, minimum recommended pad | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.3 | W | Note 6, 1 inch square copper | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 162 | °C/W | Steady State, Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 98 | °C/W | Steady State, Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V, TJ = +25°C | 2 | ||
| Gate-Source Leakage | IGSS | -10 | 10 | µA | VGS = ±10V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.5 | 0.9 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance (4.5V) | RDS(ON) | 20 | 27 | mΩ | VGS = 4.5V, ID = 6.5A | 2 | |
| Static Drain-Source On-Resistance (2.5V) | RDS(ON) | 26.7 | 35 | mΩ | VGS = 2.5V, ID = 5.5A | 2 | |
| Static Drain-Source On-Resistance (1.8V) | RDS(ON) | 49.1 | 65 | mΩ | VGS = 1.8V, ID = 3.5A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0V, ID = 5A | 2 | |
| Input Capacitance | Ciss | 485 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 91 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 77 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 3.1 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 5.9 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Gate-Source Charge | Qgs | 12 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Gate-Drain Charge | Qgd | 0.8 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Turn-On Delay Time | tD(ON) | 3.4 | ns | VDS = 10V, VGS = 4.5V, RL = 10Ω, Rg = 6Ω, ID = 1A | 2 | ||
| Turn-On Rise Time | tR | 5.4 | ns | VDS = 10V, VGS = 4.5V, RL = 10Ω, Rg = 6Ω, ID = 1A | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 18 | ns | VDS = 10V, VGS = 4.5V, RL = 10Ω, Rg = 6Ω, ID = 1A | 2 | ||
| Turn-Off Fall Time | tF | 9.3 | ns | VDS = 10V, VGS = 4.5V, RL = 10Ω, Rg = 6Ω, ID = 1A | 2 | ||
| Reverse Recovery Time | tRR | 7.7 | ns | IF = 1.0A, di/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | QRR | 1.5 | nC | IF = 1.0A, di/dt = 100A/μs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN2025U-13 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn2025u-13-etched.step/dmn2025u-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2025u-13.step/dmn2025u-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
d178f19839d9a049, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).