component

DRV8220DRLR

Public Made by Adom

by adom

Texas Instruments Motor Driver ICs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentpower supply chipdrv8220drlrfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

DRV8220DRLR

Texas Instruments · Motor Driver ICs · SOT-563

DRV8220DRLR from Texas Instruments, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN1 input H-bridge control input (PWM interface) with an internal pulldown resistor; see Section 8.3.2.
2 IN2 input H-bridge control input (PWM interface) with an internal pulldown resistor; see Section 8.3.2.
3 GND power_in Device ground; connect to system ground.
4 OUT2 output H-bridge output; connect to the motor or other load.
5 VM power_in Motor power supply, 4.5 V to 18 V; bypass to GND with a 0.1-µF ceramic capacitor plus sufficient bulk capacitance rated for VM.
6 OUT1 output H-bridge output; connect to the motor or other load.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-563
Category Power Supply Chip
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power supply pin voltage VM -0.5 20 V VM 5
Power supply transient voltage ramp VM 0 2 V/µs VM 5
Logic pin voltage -0.5 5.75 V INx, nSLEEP, IN1/PH, IN2/EN 5
Ambient temperature TA -40 125 °C 5
Junction temperature TJ -40 150 °C 5
Storage temperature Tstg -65 150 °C 5
ESD HBM V(ESD) -2000 2000 V Human body model, ANSI/ESDA/JEDEC JS-001 5
ESD CDM V(ESD) -500 500 V Charged device model, JESD22-C101 5
Motor power supply voltage VVM 4.5 18 V VM 5
Logic pin voltage VIN 0 5.5 V INx, nSLEEP, IN1/PH, IN2/EN, MODE 5
PWM frequency fPWM 0 100 kHz INx, IN1/PH, IN2/EN 5
Peak output current IOUT 0 1.76 A OUTx 5
Operating ambient temperature TA -40 125 °C 5
Operating junction temperature TJ -40 150 °C 5
Junction-to-ambient thermal resistance RθJA 152.4 °C/W DRL (SOT563), 6 pins 5
Junction-to-case (top) thermal resistance RθJC(top) 63.6 °C/W DRL (SOT563) 5
Junction-to-board thermal resistance RθJB 39.1 °C/W DRL (SOT563) 5
Junction-to-top characterization parameter ΨJT 2 °C/W DRL (SOT563) 5
Junction-to-board characterization parameter ΨJB 38.7 °C/W DRL (SOT563) 5
VM active mode current IVM 1.5 2 mA IN1 = 0 V, IN2 = 3.3 V 6
VM sleep mode current IVMQ 960 nA Sleep mode, VVM = 12 V, TJ = 27°C 6
Turnon time tWAKE 65 µs Sleep mode to active mode delay 6
Autosleep turnoff time tAUTOSLEEP 0.9 2.6 ms Active mode to autosleep mode delay, nSLEEP = 3.3 V 6
Turnoff time tSLEEP 1 µs Active mode to sleep mode delay, nSLEEP = 0 V 6
Input logic low voltage VIL 0 0.35 V 6
Input logic high voltage VIH 1.45 5.5 V 6
Input logic hysteresis VHYS 49 mV 6
Input logic low current IIL -1 1 µA VI = 0 V 6
Input logic high current, IN1/EN, IN2/PH IIH 20 50 µA VI = 3.3 V 6
Input logic high current, nSLEEP IIH_nSLEEP 60 100 µA VI = 3.3 V, active mode 6
Input pulldown resistance, IN1/EN, IN2/PH RPD 100 kΩ To GND 6
Tri-level input logic low voltage VTIL 0 0.22 V max is 0.22 × VnSLEEP (V) 6
High-side MOSFET on resistance RDS(on)_HS 500 mΩ IO = 0.2 A 6
Low-side MOSFET on resistance RDS(on)_LS 500 mΩ IO = -0.2 A 6
Body diode forward voltage VSD 1 V IO = -0.5 A 6
Output rise time tRISE 150 ns VOUTx rising from 10% to 90% of VVM 6
Output fall time tFALL 150 ns VOUTx falling from 90% to 10% of VVM 6
Input to output propagation delay tPD 135 ns Input crosses 0.8 V to VOUTx = 0.1×VVM, IO = 1 A 6
Output dead time tDEAD 500 ns Internal dead time 6
VM supply UVLO rising VUVLO 4.5 V Supply rising 7
VM supply UVLO falling VUVLO 3.7 V Supply falling 7
Supply UVLO hysteresis VUVLO_HYS 325 mV Rising to falling threshold 7
Overcurrent protection trip point IOCP 1.76 A 7
Overcurrent protection deglitch time tOCP 4.2 µs 7
Overcurrent protection retry time tRETRY 1.7 ms 7
Thermal shutdown temperature TTSD 153 193 °C 7
Thermal shutdown hysteresis THYS 22 °C 7

CAD (KiCad official)

  • Symbol: DRV8220DRLR
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: drv8220drlr-etched.step / drv8220drlr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); drv8220drlr.step / drv8220drlr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (46 pp, sha256 d3b7079b688e1498, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF