component
MMDT2227Q-7-F
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownMMDT2227Q-7-F
Diodes Incorporated · Bipolar (BJT) · SOT-363
MMDT2227Q-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of transistor 2 (Q2), per the top-view pin-out. |
| 2 | B2 | input | Base of transistor 2 (Q2), per the top-view pin-out. |
| 3 | C1 | passive | Collector of transistor 1 (Q1), per the top-view pin-out. |
| 4 | E1 | passive | Emitter of transistor 1 (Q1), per the top-view pin-out. |
| 5 | B1 | input | Base of transistor 1 (Q1), per the top-view pin-out. |
| 6 | C2 | passive | Collector of transistor 2 (Q2), per the top-view pin-out. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NPN Collector-Base Breakdown Voltage (2222A) | BVCBO | 75 | V | IC = 100μA | 3 | ||
| NPN Collector-Emitter Breakdown Voltage (2222A) | BVCEO | 40 | V | IC = 10mA | 3 | ||
| NPN Emitter-Base Breakdown Voltage (2222A) | BVEBO | 6 | V | IE = 100μA | 3 | ||
| NPN Collector Cutoff Current (2222A) | ICBO | 10 | nA | VCB = 60V | 3 | ||
| NPN Collector Cutoff Current at 150C (2222A) | ICBO | 10 | nA | VCB = 60V, Tamb = +150C | 3 | ||
| NPN Emitter Cutoff Current (2222A) | IEBO | 10 | nA | VEB = 5.0V | 3 | ||
| NPN Base Cutoff Current (2222A) | IBL | 20 | nA | VCE = 60V, VEB(off) = 3.0V | 3 | ||
| NPN DC Current Gain hFE (2222A) | hFE | 35 | IC = 100μA, VCE = 10V | 3 | |||
| NPN DC Current Gain hFE (2222A) | hFE | 50 | IC = 1mA, VCE = 10V | 3 | |||
| NPN DC Current Gain hFE (2222A) | hFE | 75 | IC = 10mA, VCE = 10V | 3 | |||
| NPN DC Current Gain hFE (2222A) | hFE | 100 | IC = 150mA, VCE = 10V | 3 | |||
| NPN DC Current Gain hFE (2222A) | hFE | 40 | IC = 500mA, VCE = 10V | 3 | |||
| NPN DC Current Gain hFE (2222A) | hFE | 300 | 3 | ||||
| NPN Collector-Emitter Saturation Voltage (2222A) | VCE(sat) | 0.3 | V | IC = 150mA, IB = 15mA | 3 | ||
| NPN Collector-Emitter Saturation Voltage (2222A) | VCE(sat) | 1 | V | IC = 500mA, IB = 50mA | 3 | ||
| NPN Base-Emitter Saturation Voltage (2222A) | VBE(sat) | 0.6 | V | IC = 150mA, IB = 15mA | 3 | ||
| NPN Base-Emitter Saturation Voltage (2222A) | VBE(sat) | 1.2 | V | IC = 150mA, IB = 15mA | 3 | ||
| NPN Base-Emitter Saturation Voltage (2222A) | VBE(sat) | 2 | V | IC = 500mA, IB = 50mA | 3 | ||
| NPN Output Capacitance (2222A) | Cobo | 8 | pF | VCB = 10V, f = 1MHz | 3 | ||
| NPN Input Capacitance (2222A) | Cibo | 25 | pF | VEB = 0.5V, f = 1MHz | 3 | ||
| NPN Current Gain-Bandwidth Product (2222A) | fT | 300 | MHz | VCE = 20V, IC = 20mA, f = 100MHz | 3 | ||
| NPN Noise Figure (2222A) | NF | 4 | dB | VCE = 10V, IC = 100μA, RS = 1kΩ f = 1kHz | 3 | ||
| NPN Delay Time (2222A) | td | 10 | ns | VCC = 30V, IC = 150mA, VBE(off) = -0.5V, IB1 = 15mA | 3 | ||
| NPN Rise Time (2222A) | tr | 25 | ns | VCC = 30V, IC = 150mA, VBE(off) = -0.5V, IB1 = 15mA | 3 | ||
| NPN Storage Time (2222A) | ts | 225 | ns | VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA | 3 | ||
| NPN Fall Time (2222A) | tf | 60 | ns | VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA | 3 | ||
| PNP Collector-Base Breakdown Voltage (2907A) | BVCBO | -60 | V | IC = -100μA | 6 | ||
| PNP Collector-Emitter Breakdown Voltage (2907A) | BVCEO | -60 | V | IC = -10mA | 6 | ||
| PNP Emitter-Base Breakdown Voltage (2907A) | BVEBO | -6 | V | IE = -100μA | 6 | ||
| PNP Collector Cutoff Current (2907A) | ICBO | -10 | nA | VCB = -50V | 6 | ||
| PNP Collector Cutoff Current (2907A) | ICEX | -50 | nA | VCE = -30V, VEB(off) = -0.5V | 6 | ||
| PNP Base Cutoff Current (2907A) | IBL | -50 | nA | VCE = -30V, VEB(off) = -0.5V | 6 | ||
| PNP DC Current Gain hFE (2907A) | hFE | 75 | IC = -100µA, VCE = -10V | 6 | |||
| PNP DC Current Gain hFE (2907A) | hFE | 100 | IC = -1.0mA, VCE = -10V | 6 | |||
| PNP DC Current Gain hFE (2907A) | hFE | 50 | IC = -500mA, VCE = -10V | 6 | |||
| PNP DC Current Gain hFE (2907A) | hFE | 300 | 6 | ||||
| PNP Collector-Emitter Saturation Voltage (2907A) | VCE(sat) | -0.4 | V | IC = -150mA, IB = -15mA | 6 | ||
| PNP Collector-Emitter Saturation Voltage (2907A) | VCE(sat) | -1.6 | V | IC = -500mA, IB = -50mA | 6 | ||
| PNP Base-Emitter Saturation Voltage (2907A) | VBE(sat) | -1.3 | V | IC = 150mA, IB = 15mA | 6 | ||
| PNP Base-Emitter Saturation Voltage (2907A) | VBE(sat) | -2.6 | V | IC = 500mA, IB = 50mA | 6 | ||
| PNP Output Capacitance (2907A) | Cobo | 8 | pF | VCB = -10V, f = 1MHz | 6 | ||
| PNP Input Capacitance (2907A) | Cibo | 30 | pF | VEB = -2V, f = 1MHz | 6 | ||
| PNP Current Gain-Bandwidth Product (2907A) | fT | 200 | MHz | VCE = -20V, IC = -50mA, f = 100MHz | 6 | ||
| PNP Turn-On Time (2907A) | ton | 45 | ns | 6 | |||
| PNP Delay Time (2907A) | td | 10 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 6 | ||
| PNP Rise Time (2907A) | tr | 40 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 6 | ||
| PNP Turn-Off Time (2907A) | toff | 100 | ns | 6 | |||
| PNP Storage Time (2907A) | ts | 80 | ns | VCC = -6V, IC = -150mA, IB1 = IB2 = -15mA | 6 | ||
| PNP Fall Time (2907A) | tf | 30 | ns | VCC = -6V, IC = -150mA, IB1 = IB2 = -15mA | 6 | ||
| NPN Collector-Emitter Voltage, Maximum Rating (2222A) | VCEO | 40 | V | Tamb = +25°C | 2 | ||
| PNP Collector-Emitter Voltage, Maximum Rating (2907A) | VCEO | -60 | V | Tamb = +25°C | 2 | ||
| Power Dissipation | PD | 200 | mW | Note 5: FR-4 minimum recommended pad layout, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 625 | C/W | Note 5: FR-4 minimum recommended pad layout, still air | 2 | ||
| Thermal Resistance, Junction to Case | RJC | 150 | C/W | Note 6: junction to top of package | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
MMDT2227Q-7-F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmdt2227q-7-f-etched.step/mmdt2227q-7-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt2227q-7-f.step/mmdt2227q-7-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
8f995410e6733787, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).