component
DSL12AW-7
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Diodes Incorporated Bipolar (BJT), SOT-363. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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Contents
README
markdownDSL12AW-7
Diodes Incorporated · Bipolar (BJT) · SOT-363
DSL12AW-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector. Pins 1, 2, 5 and 6 are internally tied together to a single collector terminal in the SOT-363 package to distribute the -2A continuous collector current (-3A peak). Rated to VCBO = -12V and VCEO = -12V. |
| 2 | C | passive | Collector (paralleled with pins 1, 5, 6). See pin 1 for full specifications. |
| 3 | B | input | Base. Control input for the PNP transistor. Emitter-base breakdown BVEBO = -5V (max VEBO = -5V). Typical VBE(on) up to -0.95V at IC = -1A, VCE = -1.5V; recommended base drive IB = -10 to -20 mA for saturated switching at IC = -0.5 to -1A. |
| 4 | E | passive | Emitter. Single emitter terminal of the PNP transistor (the arrow pin in the device schematic). Carries the full emitter current corresponding to IC up to -2A continuous / -3A peak. |
| 5 | C | passive | Collector (paralleled with pins 1, 2, 6). See pin 1 for full specifications. |
| 6 | C | passive | Collector (paralleled with pins 1, 2, 5). See pin 1 for full specifications. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Ordering variants
Same part, different packaging or reel option.
DSL12AW-7
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -12 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | -12 | V | 2 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 2 | |||
| Collector Current - Continuous | IC | -2 | A | 2 | |||
| Peak Pulse Collector Current | ICM | -3 | A | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Power Dissipation (Note 3) | PD | 450 | mW | @ TA = 25°C; Note 3: FR-4 PCB, minimum recommended pad layout | 2 | ||
| Power Dissipation (Note 4) | PD | 650 | mW | @ TA = 25°C; Note 4: FR-4 PCB, 25mm x 25mm square pad 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 3) | RθJA | 275 | °C/W | @ TA = 25°C; Note 3: FR-4 PCB, minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 3, as printed) | RθJA | 192 | °C/W | @ TA = 25°C; printed as Note 3 (PD row for this value is Note 4) | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | -12 | -35 | V | IC = -100μA, IE = 0 | 3 | |
| Collector-Emitter Breakdown Voltage (Note 5) | BVCEO | -12 | -20 | V | IC = -10mA, IB = 0 | 3 | |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | -8.3 | V | IE = -100μA, IC = 0 | 3 | |
| Collector Cutoff Current | ICBO | -1 | -100 | nA | VCB = -12V, IE = 0 | 3 | |
| Emitter Cutoff Current | IEBO | -1 | -100 | nA | VEB = -5V, IC = 0 | 3 | |
| DC Current Gain (Note 5) | hFE | 100 | 175 | VCE = -1.5V, IC = -0.5A | 3 | ||
| DC Current Gain (Note 5) | hFE | 100 | 165 | VCE = -1.5V, IC = -0.8A | 3 | ||
| DC Current Gain (Note 5) | hFE | 100 | 160 | VCE = -1.5V, IC = -1A | 3 | ||
| Collector-Emitter Saturation Voltage (Note 5) | VCE(sat) | -70 | -160 | mV | IC = -0.5A, IB = -10mA | 3 | |
| Collector-Emitter Saturation Voltage (Note 5) | VCE(sat) | -95 | -235 | mV | IC = -0.8A, IB = -16mA | 3 | |
| Collector-Emitter Saturation Voltage (Note 5) | VCE(sat) | -115 | -290 | mV | IC = -1A, IB = -20mA | 3 | |
| Collector-Emitter Saturation Resistance | RCE(sat) | 290 | mΩ | IC = -1A, IB = -20mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | V | IC = -1A, IB = -20mA | 3 | ||
| Base-Emitter Turn On Voltage | VBE(on) | -0.95 | V | VCE = -1.5V, IC = -1A | 3 | ||
| Output Capacitance | Cobo | 65 | pF | VCB = -1.5V, f = 1.0MHz | 3 |
CAD (KiCad official)
- Symbol:
DSL12AW-7 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
dsl12aw-7-etched.step/dsl12aw-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dsl12aw-7.step/dsl12aw-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
1c960f2da8d3986a, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).