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HXY70N03NF
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHXY70N03NF
HXY MOSFET · MOSFETs · DFN5X6-8L
HXY70N03NF from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked on the package drawing); the drawing shows source pins tied together. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with the other source pins. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with the other source pins. |
| 4 | G | input | Gate terminal; VGS is rated at ±20 V maximum, with a gate threshold of 1.2 V to 2.5 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET (VDS 30 V max, ID 70 A at TC=25℃), shared with the exposed drain pad. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET (VDS 30 V max, ID 70 A at TC=25℃), shared with the exposed drain pad. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET (VDS 30 V max, ID 70 A at TC=25℃), shared with the exposed drain pad. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET (VDS 30 V max, ID 70 A at TC=25℃), shared with the exposed drain pad. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (VGS=10V) | RDS(ON) | 5.7 | 7 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance (VGS=4.5V) | RDS(ON) | 11 | 13 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (TJ=55℃) | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 81 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 160 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 70 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 51 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 15 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 12 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 115.2 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=48A | 1 | ||
| Avalanche Current | IAS | 48 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 59 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Surface mounted on a 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.1 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HXY70N03NF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
hxy70n03nf-etched.step/hxy70n03nf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy70n03nf.step/hxy70n03nf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
f00dc80b1b0faab8, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).