Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

NSi8221N1-Q1SPR

NOVOSENSE · Digital Isolators · SOP-8-150mil

NSi8221N1-Q1SPR from NOVOSENSE, in a SOP-8-150mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Power supply for isolator side 1, operating range 2.5V to 5.5V with a 0.1 µF bypass capacitor to GND1.
2 OUTA output Logic output A on side 2 (NSi8221N has one channel in each direction), with 50 ohm typical output impedance.
3 INB input Logic input B on side 1, with VIH of 2V min and VIL of 0.8V max.
4 GND1 power_in Ground 1, the ground reference for isolator side 1.
5 GND2 power_in Ground 2, the ground reference for isolator side 2.
6 OUTB output Logic output B, with 50 ohm typical output impedance and VOH of VDD-0.4V min at IOH of 4mA.
7 INA input Logic input A, with VIH of 2V min and VIL of 0.8V max.
8 VDD2 power_in Power supply for isolator side 2, operating range 2.5V to 5.5V with a 0.1 µF bypass capacitor to GND2.

Key specifications

Parameter Value
Manufacturer NOVOSENSE
Package SOP-8-150mil
Category Communication Interface Chip/UART/485/232
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power Supply Voltage VDD1, VDD2 -0.5 6.5 V 7
Maximum Input Voltage VINA, VINB -0.4 V Max VDD+0.4; must not exceed 6.5V 7
Maximum Output Voltage VOUTA, VOUTB -0.4 V Max VDD+0.4; must not exceed 6.5V 7
Maximum Input/Output Pulse Voltage VINA, VINB, VOUTA, VOUTB -0.8 V Max VDD+0.8; pulse width less than 100ns, duty cycle less than 10% 7
Output current Io -15 15 mA 7
Operating Temperature Topr -40 125 ℃ 7
Junction Temperature Tj 150 ℃ 7
Storage Temperature Tstg -65 150 ℃ 7
ESD HBM HBM -8000 8000 V Electrostatic discharge, ±8000 7
ESD CDM CDM -2000 2000 V Electrostatic discharge, ±2000 7
Power Supply Voltage VDD1, VDD2 2.5 5.5 V 7
Operating Temperature Topr -40 125 ℃ 7
High Level Input Voltage VIH 2 V 7
Low Level Input Voltage VIL 0.8 V 7
Data rate DR 150 Mbps 7
Junction-to-Air Thermal Resistance (SOP8) θJA 137.7 ℃/W SOP8 7
Junction-to-case (top) thermal resistance (SOP8) θJC(top) 54.9 ℃/W SOP8 8
Junction-to-board thermal resistance (SOP8) θJB 71.7 ℃/W SOP8 8
Power on Reset VDDPOR 2.2 V POR threshold as during power-up 8
POR threshold Hysteresis VDD HYS 0.1 V POR threshold Hysteresis 8
Input Threshold VIT 1.6 V Input Threshold at rising edge 8
Input Threshold Hysteresis VIT_HYS 0.4 V Input Threshold Hysteresis 8
High Level Input Voltage VIH 2 V 8
Low Level Input Voltage VIL 0.8 V 8
Low Level Output Voltage VOL 0.4 V IOL ≤ 4mA 8
Output Impedance Rout 50 ohm 8
Input Pull high or low Current Ipull 8 15 uA 8
Start Up Time after POR trbs 10 usec 8
Common Mode Transient Immunity CMTI 200 250 kV/us See Figure 5.8 8
Supply current IDD1 quiescent IDD1(Q0) 0.94 1.41 mA All Input at supply for NSi822xx1; VDD=5V±10% 9
Supply current IDD2 quiescent IDD2(Q0) 0.94 1.41 mA All Input at supply for NSi822xx1; VDD=5V±10% 9
Supply current IDD1 inputs low IDD1(Q1) 2.06 3.09 mA All Input 0V for NSi822xx1; VDD=5V±10% 9
Supply current IDD2 inputs low IDD2(Q1) 2.06 3.09 mA All Input 0V for NSi822xx1; VDD=5V±10% 9
Supply current IDD1 1Mbps IDD1(1M) 1.55 2.32 mA All Input with 1Mbps, CL=15pF; VDD=5V±10% 9
Supply current IDD2 1Mbps IDD2(1M) 1.55 2.32 mA All Input with 1Mbps, CL=15pF; VDD=5V±10% 9
Supply current IDD1 10Mbps IDD1(10M) 1.96 2.93 mA All Input with 10Mbps, CL=15pF; VDD=5V±10% 9
Supply current IDD2 10Mbps IDD2(10M) 1.96 2.93 mA All Input with 10Mbps, CL=15pF; VDD=5V±10% 9
Supply current IDD1 100Mbps IDD1(100M) 5.86 10.05 mA All Input with 100Mbps, CL = 15pF; VDD=5V±10% 9
Supply current IDD2 100Mbps IDD2(100M) 5.86 10.05 mA All Input with 100Mbps, CL = 15pF; VDD=5V±10% 9
Data Rate DR 0 150 Mbps 5V supply 12
Minimum Pulse Width PW 5 ns 5V supply 12
Propagation Delay low-to-high tPLH 2.5 6.54 15 ns See Figure 5.7 , CL = 15pF; 5V supply 12
Propagation Delay high-to-low tPHL 2.5 8.3 15 ns See Figure 5.7 , CL = 15pF; 5V supply 12
Pulse Width Distortion /tPHL, tPLH/ PWD 5 ns See Figure 5.7 , CL = 15pF; 5V supply 12
Rising Time tr 5 ns See Figure 5.7 , CL = 15pF; 5V supply 12
Falling Time tf 5 ns See Figure 5.7 , CL = 15pF; 5V supply 12
Peak Eye Diagram Jitter tJIT(PK) 350 ps 5V supply 12
Channel-to-Channel Delay Skew tSK(c2c) 2.5 ns 5V supply 12
Part-to-Part Delay Skew tSK(p2p) 5 ns 5V supply 12

CAD (KiCad official)

  • Symbol: NSi8221N1-Q1SPR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8-150mil (KiCad packages3D, STEP)
  • 3D model files: nsi8221n1-q1spr-etched.step / nsi8221n1-q1spr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsi8221n1-q1spr.step / nsi8221n1-q1spr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NOVOSENSE datasheet (36 pp, sha256 971a4f3f2abd0e84, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF