component
STP13N60M2
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP13N60M2
STMicroelectronics · MOSFETs · TO-220
STP13N60M2 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; Zener-protected, gate-source voltage limited to ±25 V with gate threshold of 2 to 4 V. |
| 2 | D | passive | Drain, also connected to the TAB; 600 V minimum drain-source breakdown and 11 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source; connected to the body diode anode, with 11 A maximum continuous source-drain diode current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 | 25 | V | 3 | ||
| Drain current (continuous) at TC = 25 °C | ID | 11 | A | TC = 25 °C | 3 | ||
| Drain current (continuous) at TC = 100 °C | ID | 7 | A | TC = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 44 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation at TC = 25 °C | PTOT | 110 | W | TC = 25 °C | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 15 | V/ns | ISD ≤ 11 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V | 3 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS ≤ 480 V | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) | IAR | 2.8 | A | Pulse width limited by Tjmax | 3 | ||
| Single pulse avalanche energy | EAS | 125 | mJ | Starting Tj=25°C, ID=IAR; VDD=50 | 3 | ||
| Thermal resistance junction-case max | Rthj-case | 1.14 | °C/W | 3 | |||
| Thermal resistance junction-ambient max (TO-220) | Rthj-amb | 62.5 | °C/W | TO-220 package column | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | ID = 1 mA, VGS = 0 | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 600 V, VGS = 0 | 4 | ||
| Zero gate voltage drain current | IDSS | 100 | μA | VDS = 600 V, TC=125 °C | 4 | ||
| Gate-body leakage current | IGSS | -10 | 10 | μA | VGS = ± 25 V, VDS = 0 | 4 | |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 μA | 4 |
| Static drain-source on-resistance | RDS(on) | 0.35 | 0.38 | Ω | VGS = 10 V, ID = 5.5 A | 4 | |
| Source-drain current | ISD | 11 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 44 | A | Pulse width limited by safe operating area | 5 | ||
| Forward on voltage | VSD | 1.6 | V | ISD = 11 A, VGS = 0; pulsed: pulse duration = 300 μs, duty cycle 1.5% | 5 |
CAD (KiCad official)
- Symbol:
STP13N60M2 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stp13n60m2-etched.step/stp13n60m2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp13n60m2.step/stp13n60m2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (18 pp, sha256
90551637d6e826b8, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).