component
PJM60H12MNSA
Public Made by Adomby adom
PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPJM60H12MNSA
PJSEMI · MOSFETs · SOT-23
PJM60H12MNSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel depletion-mode MOSFET, rated for a gate-source voltage of ±20 V with a gate-source ESD (HBM) rating of 300 V. |
| 2 | Source | passive | Source terminal of the N-channel depletion-mode MOSFET, referenced to the ±20 V gate-source voltage rating. |
| 3 | Drain | passive | Drain terminal of the N-channel depletion-mode MOSFET, rated for a drain-source voltage of 600 V and continuous drain current of 0.03 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 600 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 0.03 | A | 1 | |||
| Drain Current-Pulsed | IDM | 0.12 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.5 | W | 1 | |||
| Gate Source ESD | VESD(G-S) | 300 | V | HBM-C=100pF, R=1.5kΩ | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 250 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 600 | V | VGS=-5V,ID=250μA | 2 | ||
| Gate-Body Leakage Current | ID(off) | 0.1 | μA | VDS=600V, VGS=-5V | 2 | ||
| Gate-Body Leakage Current (high temperature) | ID(off) | 10 | μA | VDS=480V, VGS=-5V, TA=125°C | 2 | ||
| Gate Leakage Current | IGSS | -200 | 200 | nA | VGS=±10V | 2 | |
| Gate-to-Source Cut-off Voltage | VGS(off) | -2.7 | -1.8 | -1 | V | VDS=3V,ID=8μA | 2 |
| On-State Drain Current | IDSS | 12 | mA | VGS=0V, VDS=25V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 350 | 700 | Ω | VGS=0V, ID=3mA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 400 | 800 | Ω | VGS=10V, ID=16mA | 2 | |
| Forward Transconductance | gFS | 8 | 17 | mS | VDS=50V,ID=0.01A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=-5V,IF=16mA | 2 | ||
| Diode Forward Current | IS | 0.025 | A | 2 | |||
| Gate-Source Breakdown Voltage | VGSO | 0.75 | 1.2 | V | IGS=±1mA (Open Drain) | 2 |
CAD (KiCad official)
- Symbol:
PJM60H12MNSA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pjm60h12mnsa-etched.step/pjm60h12mnsa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm60h12mnsa.step/pjm60h12mnsa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (7 pp, sha256
dc0d796249ff6e8f, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).