component
WTM30N20VP
Public Made by Adomby adom
WPMtek Wei Pan Microelectronics MOSFETs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWTM30N20VP
WPMtek Wei Pan Microelectronics · MOSFETs · TO-247-3L
WTM30N20VP from WPMtek Wei Pan Microelectronics, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel power MOSFET, with gate-source voltage rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for 200 V drain-source voltage (VDS) and 30 A continuous drain current at Tc=25°C (21 A at Tc=100°C). |
| 3 | Source | passive | Source terminal of the MOSFET, serving as the reference for the gate and drain ratings and the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WPMtek Wei Pan Microelectronics |
| Package | TO-247-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250uA | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=200V, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.062 | 0.075 | Ω | VGS=10V, ID=18A | 2 | |
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 30 | A | Tc=25°C | 1 | ||
| Continuous Drain Current | ID | 21 | A | Tc=100°C | 1 | ||
| Pulsed Drain Current | IDM | 120 | A | Repetitive; pulse width limited by max junction temperature (Note 2) | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 1600 | mJ | L=10mH, VDD=50V, RG=25Ω, starting TJ=25°C (Note 3) | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 8.6 | V/ns | 1 | |||
| Power Dissipation | PD | 178 | W | Tc = 25°C | 1 | ||
| Operating Junction and Storage Temperature | Tj,Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RthJC | 0.7 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RthJA | 40 | °C/W | min. footprint | 1 |
CAD (KiCad official)
- Symbol:
WTM30N20VP - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
wtm30n20vp-etched.step/wtm30n20vp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wtm30n20vp.step/wtm30n20vp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WPMtek Wei Pan Microelectronics datasheet (8 pp, sha256
9ddedad33665377d, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).