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G300C03L6
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG300C03L6
GOFORD · MOSFETs · SOT-23-6L
G300C03L6 from GOFORD, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (NMOS), with VGS rated ±12 V and threshold 0.7 to 1.3 V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (PMOS), with VDS rated -30 V and continuous drain current -4.2 A. |
| 3 | G2 | input | Gate of the P-channel MOSFET (PMOS), with VGS rated ±12 V and threshold -0.6 to -1.3 V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (PMOS), with VDS rated -30 V and pulsed drain current -16.8 A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (NMOS), with VDS rated 30 V and continuous drain current 5.6 A. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (NMOS), with VDS rated 30 V and pulsed drain current 22.4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-6L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (NMOS) | VDS | 30 | V | TC = 25ºC, unless otherwise noted | 1 | ||
| Drain-Source Voltage (PMOS) | VDS | -30 | V | TC = 25ºC, unless otherwise noted | 1 | ||
| Continuous Drain Current (NMOS) | ID | 5.6 | A | TC = 25ºC, unless otherwise noted | 1 | ||
| Continuous Drain Current (PMOS) | ID | -4.2 | A | TC = 25ºC, unless otherwise noted | 1 | ||
| Pulsed Drain Current (NMOS) | IDM | 22.4 | A | TC = 25ºC, unless otherwise noted; note 1 repetitive rating | 1 | ||
| Pulsed Drain Current (PMOS) | IDM | -16.8 | A | TC = 25ºC, unless otherwise noted; note 1 repetitive rating | 1 | ||
| Gate-Source Voltage (NMOS) | VGS | -12 | 12 | V | TC = 25ºC, unless otherwise noted | 1 | |
| Gate-Source Voltage (PMOS) | VGS | -12 | 12 | V | TC = 25ºC, unless otherwise noted | 1 | |
| Power Dissipation (NMOS) | PD | 1.4 | W | TC = 25ºC, unless otherwise noted | 1 | ||
| Power Dissipation (PMOS) | PD | 1.2 | W | TC = 25ºC, unless otherwise noted | 1 | ||
| Single pulse avalanche energy (NMOS) | EAS | 10 | mJ | note 2: Tj=25℃, VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Single pulse avalanche energy (PMOS) | EAS | 14 | mJ | note 2: Tj=25℃, VDD=-30V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Drain-Source Breakdown Voltage (NMOS) | V(BR)DSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current (NMOS) | IDSS | 1 | μA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Source Leakage (NMOS) | IGSS | -100 | 100 | nA | VGS = ±12V | 2 | |
| Gate-Source Threshold Voltage (NMOS) | VGS(th) | 0.7 | 1 | 1.3 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance (NMOS) | RDS(on) | 22 | 27 | mΩ | VGS = 10V, ID = 3A | 2 | |
| Drain-Source On-Resistance (NMOS) | RDS(on) | 25 | 30 | mΩ | VGS = 4.5V, ID = 3A | 2 | |
| Drain-Source On-Resistance (NMOS) | RDS(on) | 38 | 65 | mΩ | VGS = 2.5V, ID = 2A | 2 | |
| Continuous Body Diode Current (NMOS) | IS | 5.6 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage (NMOS) | VSD | 1.2 | V | TJ = 25ºC, ISD =3A, VGS = 0V | 2 | ||
| Drain-Source Breakdown Voltage (PMOS) | V(BR)DSS | -30 | V | VGS = 0V, ID = -250µA | 6 | ||
| Zero Gate Voltage Drain Current (PMOS) | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 6 | ||
| Gate-Source Leakage (PMOS) | IGSS | -100 | 100 | nA | VGS = ±12V | 6 | |
| Gate-Source Threshold Voltage (PMOS) | VGS(th) | -0.6 | -0.8 | -1.3 | V | VDS = VGS, ID = -250µA | 6 |
| Drain-Source On-Resistance (PMOS) | RDS(on) | 43 | 55 | mΩ | VGS = -10V, ID = -3A | 6 | |
| Drain-Source On-Resistance (PMOS) | RDS(on) | 51 | 65 | mΩ | VGS = -4.5V, ID = -3A | 6 | |
| Drain-Source On-Resistance (PMOS) | RDS(on) | 68 | 90 | mΩ | VGS = -2.5V, ID = -2A | 6 | |
| Continuous Body Diode Current (PMOS) | IS | -4.2 | A | TC = 25ºC | 6 | ||
| Body Diode Voltage (PMOS) | VSD | -1.2 | V | TJ = 25ºC, ISD = -4A, VGS = 0V | 6 | ||
| Thermal Resistance, Junction-to-Ambient (NMOS) | RthJA | 89 | ºC/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient (PMOS) | RthJA | 104 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
G300C03L6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
g300c03l6-etched.step/g300c03l6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g300c03l6.step/g300c03l6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (10 pp, sha256
cf2e6711be14468f, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).