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Contents

README

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IKD10N60RC2ATMA1

Infineon Technologies · IGBTs · TO-252

IKD10N60RC2ATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGE=15V for VCEsat spec, gate-emitter limit ±20V (±25V transient tp≤10µs), threshold 4.3-5.7V at IC=0.11mA.
2 C passive Collector (middle lead, shorter stub, also connected to the exposed tab); VCE max 600V, DC collector current 18.8A at Tc=25°C and 12.6A at Tc=100°C.
3 E passive Emitter, also the anode of the integrated reverse-conducting diode; diode forward current 8.9A at Tc=25°C and 4.6A at Tc=100°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 600 V Tvj ≥25°C 3
DC collector current IC 18.8 A Tc=25°C, limited by Tvj max 3
DC collector current IC 12.6 A Tc=100°C, limited by Tvj max 3
Pulsed collector current ICpuls 30 A tp limited by Tvj max 3
Turn off safe operating area collector current 30 A VCE ≤600V, Tvj ≤175°C, tp=1µs 3
Diode forward current IF 8.9 A Tc=25°C, limited by Tvj max 3
Diode forward current IF 4.6 A Tc=100°C, limited by Tvj max 3
Diode pulsed current IFpuls 30 A tp limited by Tvj max 3
Gate-emitter voltage VGE -20 20 V static, printed ±20 3
Transient gate-emitter voltage VGE -25 25 V tp ≤10µs, D<0.010 3
Short circuit withstand time tSC 3 µs VGE=15.0V, VCC ≤400V, Tvj=150°C 3
Power dissipation Ptot 79 W Tc=25°C 3
Power dissipation Ptot 39.5 W Tc=100°C 3
Operating junction temperature Tvj -40 175 °C 3
Storage temperature Tstg -55 150 °C 3
Soldering temperature, reflow soldering 260 °C MSL1 according to JEDEC J-STD-020 3
IGBT thermal resistance junction-case Rth(j-c) 1.9 K/W single cooling pulse 3
Diode thermal resistance junction-case Rth(j-c) 6.1 K/W single cooling pulse 3
Thermal resistance junction-ambient, min. footprint Rth(j-a) 75 K/W min. footprint 3
Thermal resistance junction-ambient, 6cm² Cu on PCB Rth(j-a) 50 K/W 6cm² Cu on PCB 3
Gate-emitter threshold voltage VGE(th) 4.3 5 5.7 V IC=0.11mA, VCE=VGE 4
Zero gate voltage collector current ICES 25 µA VCE=600V, VGE=0V, Tvj=25°C 4
Zero gate voltage collector current ICES 2500 µA VCE=600V, VGE=0V, Tvj=175°C 4
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 4

CAD (KiCad official)

  • Symbol: IKD10N60RC2ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ikd10n60rc2atma1-etched.step / ikd10n60rc2atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikd10n60rc2atma1.step / ikd10n60rc2atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 9351ee7bf5f2ce2b, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF