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Contents

README

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PZT2907A

Changjing · Bipolar (BJT) · SOT-223

PZT2907A from Changjing, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives emitter-base rating VEBO of -5 V and emitter-base breakdown V(BR)EBO of -5 V minimum, with saturation tests driven at IB = -15 mA and -50 mA.
2 COLLECTOR passive Collector terminal; the datasheet rates VCBO and VCEO at -60 V, continuous collector current IC at -0.6 A, and collector power dissipation PC at 1 W.
3 EMITTER passive Emitter terminal; the datasheet rates the emitter-base voltage VEBO at -5 V and gives the emitter-base breakdown voltage V(BR)EBO as -5 V.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -60 V IC=-10μA,IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -60 V IC=-10mA,IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10μA,IC=0 1
Collector cut-off current ICBO -10 nA VCB=-50V,IE=0 1
Emitter cut-off current IEBO -50 nA VEB=-5V,IC=0 1
DC current gain hFE(1) 75 VCE=-10V,IC=-0.1mA 1
DC current gain hFE(2) 100 VCE=-10V,IC=-1mA 1
DC current gain hFE(4) 100 300 VCE=-10V,IC=-150mA 1
DC current gain hFE(5) 50 VCE=-10V,IC=-500mA 1
Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-150mA,IB=-15mA 1
Collector-emitter saturation voltage VCE(sat) -1.6 V IC=-500mA,IB=-50mA 1
Base-emitter saturation voltage VBE(sat) -1.3 V IC=-150mA,IB=-15mA 1
Base-emitter saturation voltage VBE(sat) -2.6 V IC=-500mA,IB=-50mA 1
Transition frequency fT 200 MHz VCE=-20V,IC=-50mA,f=100MHz 1
Collector capacitance Cc 8 pF VCB=-10V,IE=0,f=1MHz 1
Emitter capacitance CE 30 pF VEB=-2V,IC=0,f=1MHz 1
Delay time td 12 ns IC=-150mA, IB1=-IB2=-15mA 1
Rise time tr 30 ns IC=-150mA, IB1=-IB2=-15mA 1
Storage time tS 300 ns IC=-150mA, IB1=-IB2=-15mA 1
Fall time tf 65 ns IC=-150mA, IB1=-IB2=-15mA 1
Collector-emitter voltage VCEO -60 V 1
Collector-base voltage VCBO -60 V 1
Emitter-base voltage VEBO -5 V 1
Collector current, continuous IC -0.6 A 1
Collector power dissipation PC 1 W 1
Junction temperature TJ 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: PZT2907A
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: pzt2907a-etched.step / pzt2907a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pzt2907a.step / pzt2907a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 781aacc30c0acc81, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF