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Contents

README

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STN4900

STANSON Tech · MOSFETs · SOP-8

STN4900 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1.
2 G1 input Gate of N-channel MOSFET 1, with VGS rated ±20V.
3 S2 passive Source of N-channel MOSFET 2.
4 G2 input Gate of N-channel MOSFET 2, with VGS rated ±20V.
5 D2 passive Drain of N-channel MOSFET 2, with VDSS rated 60V; tied with pin 6.
6 D2 passive Drain of N-channel MOSFET 2, with VDSS rated 60V; tied with pin 5.
7 D1 passive Drain of N-channel MOSFET 1, with VDSS rated 60V; tied with pin 8.
8 D1 passive Drain of N-channel MOSFET 1, with VDSS rated 60V; tied with pin 7.

Key specifications

Parameter Value
Manufacturer STANSON Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGSS -20 20 V 2
Operation Junction Temperature TJ -55 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V,ID=250uA 3
Gate Threshold Voltage VGS(th) 0.5 1.5 V VDS=VGS,ID=250 uA 3
Gate Leakage Current IGSS -100 100 nA VDS=0V,VGS=±20V 3
Zero Gate Voltage Drain Current (TJ=55℃) IDSS 1 uA TJ=55℃, VDS=20V,VGS=0V 3
Zero Gate Voltage Drain Current IDSS 5 uA VDS=20V,VGS=0V 3
Drain-source On-Resistance RDS(on) 0.11 0.118 Ω VGS=10V, ID=5.3A 3
Drain-source On-Resistance RDS(on) 0.115 0.125 Ω VGS=4.5V, ID=4.3A 3
Forward Tran Conductance gfs 15 S VDS=15V,ID=4.3A 3
Diode Forward Voltage VSD 0.8 1.2 V IS=1.7A,VGS=0V 3
Total Gate Charge Qg 15 20 nC VDS=30V,VGS=5V, ID≡4.3A 3
Turn-On Delay Time td(on) 10 20 nS VDD=30V,RL=8.8Ω, ID=3.4A,VGEN=10V, RG=1Ω 3
Turn-On Rise Time tr 15 25 nS VDD=30V,RL=8.8Ω, ID=3.4A,VGEN=10V, RG=1Ω 3
Turn-Off Delay Time td(off) 25 35 nS VDD=30V,RL=8.8Ω, ID=3.4A,VGEN=10V, RG=1Ω 3
Turn-Off Fall Time tf 12 20 nS VDD=30V,RL=8.8Ω, ID=3.4A,VGEN=10V, RG=1Ω 3
Drain-Source Voltage VDSS 60 V 2
Continuous Drain Current ID 4.2 A TJ=150℃; TA=25℃ 2
Continuous Drain Current ID 3.2 A TJ=150℃; TA=70℃ 2
Pulsed Drain Current IDM 20 A 2
Continuous Source Current (Diode Conduction) IS 11 A 2
Power Dissipation PD 2.5 W TA=25℃ 2
Power Dissipation PD 1.6 W TA=70℃ 2
Thermal Resistance-Junction to Ambient RθJA 80 ℃/W 2

CAD (KiCad official)

  • Symbol: STN4900
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stn4900-etched.step / stn4900-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stn4900.step / stn4900.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STANSON Tech datasheet (8 pp, sha256 195b8b6167635197, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF