component
BSS131H6327XTSA1-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS131H6327XTSA1-MS
MSKSEMI · MOSFETs · SOT-23
BSS131H6327XTSA1-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated ±20 V gate-source maximum with a gate threshold of 0.8 V min to 1.8 V max at VGS=VDS, ID=250 uA. |
| 2 | S | passive | Source of the N-channel MOSFET, with a continuous body-diode source current of 0.12 A maximum. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated 240 V drain-source maximum and 0.12 A continuous drain current at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 240 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=200V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=100V, VGS=0V, TJ=75℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -10 | 10 | nA | VGS=±20V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 14 | Ω | VGS=10V, ID=0.1A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9 | 20 | Ω | VGS=4.5V, ID=0.1A | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.4 | 1.8 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current | IS | 0.12 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | 0.24 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=0.1A, TJ=25℃ | 3 | ||
| Drain-Source Voltage | VDS | 240 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current - Continuous | ID | 0.12 | A | TA=25℃ | 2 | ||
| Drain Current - Continuous | ID | 0.09 | A | TA=70℃ | 2 | ||
| Drain Current - Pulsed | IDM | 0.4 | A | Pulsed (footnote 1: pulse width limited by max junction temperature) | 2 | ||
| Power Dissipation | PD | 1.25 | W | TA=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to ambient | RθJA | 80 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
BSS131H6327XTSA1-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss131h6327xtsa1-ms-etched.step/bss131h6327xtsa1-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss131h6327xtsa1-ms.step/bss131h6327xtsa1-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
e31faa8c10223040, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).