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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

S-LBSS5240LT1G

LRC · Bipolar (BJT) · SOT-23

S-LBSS5240LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base terminal of the PNP low-VCE(sat) transistor; VBE(on) is specified at -0.75 V max with VCE = -2 V and IC = -100 mA.
2	EMITTER	passive	Emitter terminal of the PNP transistor, rated for VEBO of -5.0 V and VCEO of -40 V with continuous collector current up to -2 A.
3	COLLECTOR	passive	Collector terminal of the PNP transistor, rated for VCBO of -40 V and continuous collector current of -2 A, with power dissipation of 0.3 W.

Key specifications

Parameter	Value
Manufacturer	LRC
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-base cut-off current	ICBO			-100	nA	VCB = −30 V; IE = 0	2
Emitter-base cut-off current	IEBO			-100	nA	VBE = −4 V; IC = 0	2
DC current gain	hFE	300				VCE = −2 V; IC = −100 mA	2
DC current gain	hFE	260				VCE = −2 V; IC = −500 mA	2
DC current gain	hFE	210				VCE = −2 V; IC = −1 A	2
DC current gain	hFE	100				VCE = −2 V; IC = −2 A	2
Collector-emitter saturation voltage	VCEsat			-100	mV	IC = −100 mA; IB = −1 mA	2
Collector-emitter saturation voltage	VCEsat			-110	mV	IC = −500 mA; IB = −50 mA	2
Collector-emitter saturation voltage	VCEsat			-225	mV	IC = −750 mA; IB = −15 mA	2
Collector-emitter saturation voltage	VCEsat			-350	mV	IC = −2 A; IB = −200 mA	2
Base-emitter turn-on voltage	VBE(on)			-0.75	V	VCE = −2 V; IC = −100 mA	2
Base-emitter saturation voltage	VBEsat			-1.1	V	IC = −2 A; IB = −200 mA	2
Transition frequency	fT	100			MHz	IC = −100 mA; VCE = −10 V; f = 100 MHz	2
Collector capacitance	Cc			28	pF	VCB = −10 V; IE = Ie = 0; f = 1 MHz	2
Collector-emitter voltage	VCEO			-40	V		1
Collector-base voltage	VCBO			-40	V		1
Emitter-base voltage	VEBO			-5	V		1
Collector current - continuous	IC			-2	A		1
Power dissipation	PD			0.3	W		1
Junction temperature	Tj			150	°C		1
Storage temperature	Tstg	-65		150	°C		1
Thermal resistance, junction to ambient	Rth(j-a)		417		K/W	in free air; standard footprint PCB (note 1)	1
Thermal resistance, junction to ambient	Rth(j-a)		260		K/W	in free air; PCB with mounted collector pad 1 cm2 (note 2)	1

CAD (KiCad official)

Symbol: S-LBSS5240LT1G
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: s-lbss5240lt1g-etched.step / s-lbss5240lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lbss5240lt1g.step / s-lbss5240lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: LRC datasheet (5 pp, sha256 61468430b9853513, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF