component
IKP06N60T-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIKP06N60T-VB
VBsemi Elec · MOSFETs · TO-220AB
IKP06N60T-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input of the N-channel MOSFET, rated at VGS ±30 V maximum with a gate-source threshold of 2.0 V min to 4.0 V max at ID = 250 μA. |
| 2 | D | passive | Drain terminal, rated at VDS 600 V maximum and continuous drain current of 8.0 A at TC = 25 °C (5.8 A at TC = 100 °C). |
| 3 | S | passive | Source terminal, with continuous body-diode source-drain current of 9.2 A maximum and pulsed 37 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
IKP06N60T-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
ikp06n60t-vb-etched.step/ikp06n60t-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikp06n60t-vb.step/ikp06n60t-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
078d680291797234, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).