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TM70N04NF
Public Made by Adomby adom
Tritech MOS MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM70N04NF
Tritech MOS · MOSFETs · DFN5x6-8L
TM70N04NF from Tritech MOS, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked by the dot); VDS rating 40V, continuous ID 70A at TC=25℃. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shared with pins 1 and 3; continuous ID 70A at TC=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, shared with pins 1 and 2; continuous ID 70A at TC=25℃. |
| 4 | G | input | Gate terminal; VGS limited to ±20V, threshold VGS(th) 1.2V min to 2.5V max at ID=250μA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 6-8; VDS 40V max, pulsed ID 280A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 7 and 8; VDS 40V max. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 6 and 8; VDS 40V max. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5-7; VDS 40V max. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | TC=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ unless otherwise noted | 1 | |
| Continuous Drain Current-TC=25℃ | ID | 70 | A | TC=25℃ | 1 | ||
| Continuous Drain Current-TC=100℃ | ID | 44 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | 280 | A | TC=25℃ unless otherwise noted | 1 | |||
| Single Pulse Avalanche Energy | EAS | 76 | mJ | 1 | |||
| Power Dissipation | PD | 72.3 | W | TC=25℃ unless otherwise noted | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RƟJC | 1.73 | ℃/W | 1 | |||
| Thermal Resistance Junction to Ambient | RƟJA | 62 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=40V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| GATE-Source Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance (VGS=10V) | RDS(ON) | 9 | 12 | mΩ | VGS=10V,ID=15A | 2 | |
| Drain-Source On Resistance (VGS=4.5V) | RDS(ON) | 10 | 14 | mΩ | VGS=4.5V,ID=8A | 2 | |
| Input Capacitance | Ciss | 1278 | 2200 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 135 | 250 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 87 | 170 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| Turn-On Delay Time | td(on) | 13.2 | 25 | ns | VDD=15V,ID=1A,RG=3.3Ω, VGS=10V | 2 | |
| Rise Time | tr | 2.2 | 5 | ns | VDD=15V,ID=1A,RG=3.3Ω, VGS=10V | 2 | |
| Turn-Off Delay Time | td(off) | 72 | 130 | ns | VDD=15V,ID=1A,RG=3.3Ω, VGS=10V | 2 | |
| Fall Time | tf | 4.5 | 10 | ns | VDD=15V,ID=1A,RG=3.3Ω, VGS=10V | 2 | |
| Total Gate Charge | Qg | 19.7 | 30 | nC | VGS=10V, VDS=20V, ID=10A | 2 | |
| Gate-Source Charge | Qgs | 2.8 | 4.2 | nC | VGS=10V, VDS=20V, ID=10A | 2 | |
| Gate-Drain Miller Charge | Qgd | 5.1 | 7.6 | nC | VGS=10V, VDS=20V, ID=10A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1 | V | VGS=0V,IS=1A | 2 | ||
| Continuous Source Current | Is | 70 | A | 2 | |||
| Pulsed Source Current | Ism | 140 | A | 2 |
CAD (KiCad official)
- Symbol:
TM70N04NF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
tm70n04nf-etched.step/tm70n04nf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm70n04nf.step/tm70n04nf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (5 pp, sha256
0ea47358215404ce, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).