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SI4532CDY-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4532CDY-T1-GE3-VB
VBsemi Elec · MOSFETs · SO-8
SI4532CDY-T1-GE3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, 30 V VDS rating, gate-source limit ±20 V). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), absolute maximum VGS ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, -30 V VDS rating, gate-source limit ±20 V). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), absolute maximum VGS ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), -30 V VDS, continuous ID up to -8 A (package limited), pulsed IDM -40 A. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), internally common with the other D2 pin, -30 V VDS, pulsed IDM -40 A. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), 30 V VDS, continuous ID up to 8 A (package limited), pulsed IDM 40 A. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), internally common with the other D1 pin, 30 V VDS, pulsed IDM 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 30 | V | N-Channel, TA = 25 °C | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -30 | V | P-Channel, TA = 25 °C | 1 | ||
| Gate-Source Voltage (both channels) | VGS | -20 | 20 | V | N- and P-Channel, ± 20 V | 1 | |
| Continuous Drain Current (N-Ch) | ID | 8 | A | N-Channel, TC = 25 °C, TJ = 150 °C, package limited | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -8 | A | P-Channel, TC = 25 °C, TJ = 150 °C, package limited | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 40 | A | N-Channel, 10 µs pulse width | 1 | ||
| Pulsed Drain Current (P-Ch) | IDM | -40 | A | P-Channel, 10 µs pulse width | 1 | ||
| Source-Drain Diode Current (N-Ch) | IS | 2.6 | A | N-Channel, TC = 25 °C | 1 | ||
| Source-Drain Diode Current (P-Ch) | IS | -2.6 | A | P-Channel, TC = 25 °C | 1 | ||
| Maximum Power Dissipation (N-Ch) | PD | 2 | W | N-Channel, TA = 25 °C, surface mounted on 1" x 1" FR4, t = 10 s | 1 | ||
| Maximum Power Dissipation (P-Ch) | PD | 2 | W | P-Channel, TA = 25 °C, surface mounted on 1" x 1" FR4, t = 10 s | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (N-Ch) | RthJA | 50 | 62.5 | °C/W | N-Channel, t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance (P-Ch) | RthJA | 47 | 62.5 | °C/W | P-Channel, t ≤ 10 s | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance (N-Ch) | RthJF | 30 | 40 | °C/W | N-Channel, steady state | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance (P-Ch) | RthJF | 29 | 38 | °C/W | P-Channel, steady state | 1 | |
| Drain-Source Breakdown Voltage (N-Ch) | VDS | 30 | V | VGS = 0 V, ID = 250 µA, N-Ch | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | VDS | -30 | V | VGS = 0 V, ID = - 250 µA, P-Ch | 2 | ||
| Gate-Body Leakage (N-Ch) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, N-Ch | 2 | |
| Gate-Body Leakage (P-Ch) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, P-Ch | 2 | |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch, 55 °C) | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch, 55 °C) | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Ch | 2 | ||
| On-State Drain Current (N-Ch) | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V, N-Ch | 2 | ||
| On-State Drain Current (P-Ch) | ID(on) | -20 | A | VDS = - 5 V, VGS = - 10 V, P-Ch | 2 | ||
| Body Diode Voltage (N-Ch) | VSD | 0.81 | 1.2 | V | IS = 5.4 A, N-Ch | 3 | |
| Body Diode Voltage (P-Ch) | VSD | -0.77 | -1.2 | V | IS = - 2 A, P-Ch | 3 | |
| Pulse Diode Forward Current (P-Ch) | ISM | -40 | A | P-Ch | 3 |
CAD (KiCad official)
- Symbol:
SI4532CDY-T1-GE3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4532cdy-t1-ge3-vb-etched.step/si4532cdy-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4532cdy-t1-ge3-vb.step/si4532cdy-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
8e017680dc6de4f2, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).