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Contents

README

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3P10

HL · MOSFETs · SOT-23-3L

3P10 from HL, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel trench MOSFET, rated for a gate-source voltage of ±20 V (VGS).
2 D passive Drain of the MOSFET, rated for a drain-source voltage of -100 V with continuous drain current of -0.75 A at Ta=25℃ and -3 A at Tc=25℃.
3 S passive Source of the MOSFET, with body diode continuous forward current stated as -3 A (Is, VG=VD=0V).

Key specifications

Parameter Value
Manufacturer HL
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage V(br)dss -100 V Id = -250μA, Vgs = 0V 2
Zero-Gate Voltage Drain Current (Tj=25℃) Idss -1 μA Vds = -80V, Vgs = 0V 2
Zero-Gate Voltage Drain Current (Tj=80℃) Idss -30 μA Vds = -80V, Vgs = 0V 2
Gate to Source Leakage Current Igss -100 100 nA Vgs = ±20V,Vds = 0V 2
Gate Threshold Voltage Vgs(th) -1.2 -1.8 -2.5 V Vds=Vgs, Id=-250μA 2
Static Drain to Source On-State Resistance Rds(on) 180 220 mΩ Id = -3A, Vgs = -10V 2
Static Drain to Source On-State Resistance Rds(on) 210 225 mΩ Id = -2A, Vgs = -4.5V 2
Diode Forward Voltage Vsd -1.2 V Is = -20A, Vgs = 0V 2
Continuous Diode Forward Current Is -3 A VG=VD=0V, Force Current 2
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current lD -0.75 A VGS @ -10V; Ta =25℃ 1
Continuous Drain Current lD -0.6 A VGS @ -10V; Ta =100℃ 1
Continuous Drain Current lD -3 A VGS @ -10V; Tc =25℃ 1
Continuous Drain Current lD -1.2 A VGS @ -10V; Tc =25℃ 1
Pulsed Drain Current lDM -6 A 1
Single Pulsed Avalanche Energy EAS 14.5 mJ 1
Avalanche Current IAS -4.5 A 1
Power Dissipation Pd 2 W Ta =25℃ 1
Power Dissipation Pd 10 W Tc =25℃ 1
Junction Temperature TJ -55 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Junction to case thermal resistance RθJC 8 ℃/W 2
Junction to ambient thermal resistance RθJA 72 ℃/W 2

CAD (KiCad official)

  • Symbol: 3P10
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: 3p10-etched.step / 3p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3p10.step / 3p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (7 pp, sha256 00e1636e5465addc, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF