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TPS54672PWPR
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Texas Instruments DC-DC Converters, HTSSOP-28-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPS54672PWPR
Texas Instruments · DC-DC Converters · HTSSOP-28-EP
TPS54672PWPR from Texas Instruments, in a HTSSOP-28-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | AGND | power_in | Analog ground and return for the compensation network/output divider, VBIAS capacitor, and RT resistor; connect the PowerPAD to AGND. |
| 2 | VSENSE | input | Error amplifier inverting input, connected to the output voltage through the compensation network/output divider. |
| 3 | COMP | output | Error amplifier output; the frequency compensation network connects from COMP to VSENSE. |
| 4 | STATUS | output | Open-drain output that is asserted low when VIN is below the UVLO threshold, VBIAS and the internal reference are not settled, or thermal shutdown is active, and is otherwise high; sink current is limited to 10 mA absolute maximum. |
| 5 | BOOT | output | Bootstrap output; a 0.022 µF to 0.1 µF low-ESR capacitor from BOOT to PH generates the floating drive for the high-side FET driver, with an absolute maximum of 17 V. |
| 6 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 7 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 8 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 9 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 10 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 11 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 12 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 13 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 14 | PH | output | Phase output, the junction of the internal high-side and low-side power MOSFETs and the output inductor; absolute maximum voltage is −0.3 V to 10 V. |
| 15 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET; connect with large copper areas to the input and output supply returns, with a single-point connection to AGND recommended. |
| 16 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET; connect with large copper areas to the input and output supply returns, with a single-point connection to AGND recommended. |
| 17 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET; connect with large copper areas to the input and output supply returns, with a single-point connection to AGND recommended. |
| 18 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET; connect with large copper areas to the input and output supply returns, with a single-point connection to AGND recommended. |
| 19 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET; connect with large copper areas to the input and output supply returns, with a single-point connection to AGND recommended. |
| 20 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating over 3.0 V to 6.0 V and bypassed to PGND with a low-ESR 10 µF ceramic capacitor placed close to the package. |
| 21 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating over 3.0 V to 6.0 V and bypassed to PGND with a low-ESR 10 µF ceramic capacitor placed close to the package. |
| 22 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating over 3.0 V to 6.0 V and bypassed to PGND with a low-ESR 10 µF ceramic capacitor placed close to the package. |
| 23 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating over 3.0 V to 6.0 V and bypassed to PGND with a low-ESR 10 µF ceramic capacitor placed close to the package. |
| 24 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating over 3.0 V to 6.0 V and bypassed to PGND with a low-ESR 10 µF ceramic capacitor placed close to the package. |
| 25 | VBIAS | power_out | Internal bias regulator output supplying internal circuitry, nominally 2.70 V to 2.90 V with up to 100 µA static resistive load, bypassed to AGND with a 0.1 µF to 1.0 µF low-ESR ceramic capacitor. |
| 26 | REFIN | input | External reference input, a high-impedance input to the slow-start and error amplifier circuits with an input range of 0 V to 1.8 V. |
| 27 | ENA | input | Enable input; a logic high (1.40 V or greater) enables the oscillator, PWM control and MOSFET drivers, and a logic low (0.82 V or less) disables operation into a low quiescent current state, with an absolute maximum of 7 V. |
| 28 | RT | input | Frequency-setting resistor input; connect a 68 kΩ to 180 kΩ resistor to AGND to set the switching frequency from 280 kHz to 700 kHz, or leave it floating for the internal 350 kHz default. |
| 29 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | HTSSOP-28-EP |
| Category | Power Supply Chip |
| Pins | 29 |
CAD (KiCad official)
- Symbol:
TPS54672PWPR - Footprint:
Package_SO:TSSOP-28-1EP_4.4x9.7mm_P0.65mm_EP2.85x6.7mm - 3D model: HTSSOP-28-EP (KiCad packages3D, STEP)
- 3D model files:
tps54672pwpr-etched.step/tps54672pwpr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps54672pwpr.step/tps54672pwpr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (23 pp, sha256
9158e2ffacac2f01, retrieved 2026-10-08, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).