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SI2365EDS-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI2365EDS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23-3

SI2365EDS-T1-GE3 from Vishay Intertech, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet rates gate-source voltage VGS at ±8 V.
2 S passive Source terminal; continuous source-drain diode current is rated at -1.4 A at TC = 25 °C and -1 A at TA = 25 °C.
3 D passive Drain terminal; continuous drain current is rated at -5.9 A at TC = 25 °C with drain-source voltage VDS of -20 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -5.9 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -4.7 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -4.5 A TJ = 150 °C, TA = 25 °C (notes b, c) 1
Continuous Drain Current ID -3.6 A TJ = 150 °C, TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM -20 A t = 300 µs 1
Continuous Source-Drain Diode Current IS -1.4 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.7 W TC = 25 °C 1
Maximum Power Dissipation PD 1.1 W TC = 70 °C 1
Maximum Power Dissipation PD 1 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.6 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Peak temperature (notes d, e) 1
Maximum Junction-to-Ambient RthJA 100 130 °C/W t ≤ 5 s (notes b, d) 1
Maximum Junction-to-Foot (Drain) RthJF 60 75 °C/W Steady state 1
Maximum Junction-to-Ambient under steady state 175 °C/W Steady state (note d) 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -10 10 µA VDS = 0 V, VGS = ±8 V 2
Gate-Source Leakage IGSS -1 1 µA VDS = 0 V, VGS = ±4.5 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -15 A VDS = -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.0265 0.032 Ω VGS = -4.5 V, ID = -4 A 2
Drain-Source On-State Resistance RDS(on) 0.034 0.041 Ω VGS = -2.5 V, ID = -4 A 2
Drain-Source On-State Resistance RDS(on) 0.0465 0.0675 Ω VGS = -1.8 V, ID = -2 A 2
Total Gate Charge Qg 23.8 36 nC VDS = -10 V, VGS = -8 V, ID = -4.5 A 2
Total Gate Charge Qg 13.8 21 nC VDS = -10 V, VGS = -4.5 V, ID = -4.5 A 2
Gate Resistance Rg 2.2 11 22 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 22 33 ns VDD = -10 V, RL = 2.8 Ω, ID -3.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 21 32 ns VDD = -10 V, RL = 2.8 Ω, ID -3.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 62 93 ns VDD = -10 V, RL = 2.8 Ω, ID -3.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 14 21 ns VDD = -10 V, RL = 2.8 Ω, ID -3.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 9 18 ns VDD = -10 V, RL = 2.8 Ω, ID -3.6 A, VGEN = -8 V, Rg = 1 Ω 2
Rise Time tr 6 12 ns VDD = -10 V, RL = 2.8 Ω, ID -3.6 A, VGEN = -8 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 65 98 ns VDD = -10 V, RL = 2.8 Ω, ID -3.6 A, VGEN = -8 V, Rg = 1 Ω 2
Fall Time tf 15 23 ns VDD = -10 V, RL = 2.8 Ω, ID -3.6 A, VGEN = -8 V, Rg = 1 Ω 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -3.6 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 13 20 ns IF = -3.6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 5 10 nC IF = -3.6 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI2365EDS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: si2365eds-t1-ge3-etched.step / si2365eds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2365eds-t1-ge3.step / si2365eds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 0cc712ffd9917d7a, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF