component
SE1003
Public Made by Adomby adom
SINO IC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSE1003
SINO IC · MOSFETs · SOT-23
SE1003 from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with VGS rated ±20 V and threshold VGS(th) of 1.2 V min, 1.8 V typ, 2.5 V max at ID=250μA. |
| 2 | S | passive | Source of the N-channel MOSFET, the reference terminal for the VGS and VDS ratings. |
| 3 | D | passive | Drain of the N-channel MOSFET, with VDS rated 100 V and continuous drain current ID of 3 A (20 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250μA, VGS=0 | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 230 | 250 | mΩ | VGS=10V, ID=1A | 2 | |
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 3 | A | 1 | |||
| Drain Current Pulsed | ID | 20 | A | 1 | |||
| Total Power Dissipation | PD | 1.5 | W | @TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 100 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SE1003 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
se1003-etched.step/se1003-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se1003.step/se1003.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (7 pp, sha256
bd5a83fa676965dc, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).