component
SE2305
Public Made by Adomby adom
SINO IC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSE2305
SINO IC · MOSFETs · SOT-23
SE2305 from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, threshold VGS(th) -0.4 to -1 V at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage VDS is rated -20 V. |
| 3 | D | passive | Drain; continuous drain current -4.7 A, pulsed -20 A, VDS -20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID=-250μA, VGS=0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-16 V, VGS=0 V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | μA | VDS=0 V, VGS=±8 V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -1 | V | VDS=VGS, ID=-250μA | 2 | |
| Static Drain-Source On-Resistance (VGS=-1.8V) | RDS(ON) | 42 | 52 | mΩ | VGS=-1.8V, ID=-2A | 2 | |
| Static Drain-Source On-Resistance (VGS=-2.5V) | RDS(ON) | 35 | 40 | mΩ | VGS=-2.50V, ID=-4.1A | 2 | |
| Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) | 30 | 35 | mΩ | VGS=-4.5V, ID=-4.7A | 2 | |
| Turn-On Delay Time | td(on) | 25 | 50 | ns | VGS=-10V, VGEN=-4.5V, RL=10Ω, RG=6Ω, ID=-1A | 2 | |
| Turn-Off Delay Time | td(off) | 71 | 142 | ns | VGS=-10V, VGEN=-4.5V, RL=10Ω, RG=6Ω, ID=-1A | 2 | |
| Drain-Source Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1 | 2 | ||
| Input Capacitance | Ciss | 1020 | pF | 2 | |||
| Output Capacitance | Coss | 191 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 140 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current Continuous (Note 1) | ID | -4.7 | A | Note 1, continuous | 1 | ||
| Drain Current Pulsed | -20 | A | Pulsed | 1 | |||
| Total Power Dissipation | PD | 1.25 | W | @TA=25°C | 1 | ||
| Total Power Dissipation | PD | 0.8 | W | @TA=75°C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
SE2305 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
se2305-etched.step/se2305-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se2305.step/se2305.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (6 pp, sha256
ceb2495c0379f7a6, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).