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Contents

README

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WTM18N20VD

WPMtek(Wei Pan Microelectronics) · MOSFETs · TO-252

WTM18N20VD from WPMtek(Wei Pan Microelectronics), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET; gate-source voltage is rated at ±30V and gate threshold voltage VGS(TH) is 2.0 to 4.0V.
2 Drain passive Drain of the N-channel MOSFET; drain-source voltage is rated at 200V with a continuous drain current of 18A at Tc=25°C.
3 Source passive Source of the N-channel MOSFET; body-diode continuous current is rated at 18A and pulsed current at 72A.

Key specifications

Parameter Value
Manufacturer WPMtek(Wei Pan Microelectronics)
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 18 A Tc=25°C 1
Continuous Drain Current ID 13.6 A Tc=100°C 1
Pulsed Drain Current IDM 72 A Note 2 (repetitive rating) 1
Peak Diode Recovery dv/dt dv/dt 2.1 V/ns Note 4 1
Operation Junction and Storage Temperature Tj, stg -55 150 °C 1
Junction to Ambient Thermal Resistance RthJA 62.5 °C/W 1
Junction to Case Thermal Resistance RthJC 2 °C/W 1
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V,ID=250uA 2
Gate-Source Leakage Current (forward) IGSS 100 nA VGS=30V,VDS=0V 2
Gate-Source Leakage Current (reverse) IGSS -100 nA VGS=-30V,VDS=0V 2
Drain-Source Leakage Current IDSS 1 uA VDS=200V,VGS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 0.16 0.2 Ω VGS=10V,ID=9A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS,ID=250uA 2
Input Capacitance CISS 1230 pF VDS=25V,VGS=0V,f=1.0MHz 2
Output Capacitance COSS 154 pF VDS=25V,VGS=0V,f=1.0MHz 2
Reverse Transfer Capacitance CRSS 6.6 pF VDS=25V,VGS=0V,f=1.0MHz 2
Total Gate Charge QG 31 nC VDS=160V,VGS=10V,ID=18A,IG=1mA (NOTE1,2) 2
Gate-Drain Charge QGD 16.5 nC VDS=160V,VGS=10V,ID=18A,IG=1mA (NOTE1,2) 2
Gate-Source Charge QGS 3.3 nC VDS=160V,VGS=10V,ID=18A,IG=1mA (NOTE1,2) 2
Turn-On Delay Time tD(ON) 35 ns VDS=100V,VGS=10V,ID=18A,RG=20Ω (NOTE1,2) 2
Turn-Off Delay Time tD(OFF) 150 ns VDS=100V,VGS=10V,ID=18A,RG=20Ω (NOTE1,2) 2
Turn-On Rise Time tR 20 ns VDS=100V,VGS=10V,ID=18A,RG=20Ω (NOTE1,2) 2
Turn-Off Fall Time tF 36 ns VDS=100V,VGS=10V,ID=18A,RG=20Ω (NOTE1,2) 2
Maximum Body-Diode Continuous Current IS 18 A VGS=0V 2
Maximum Body-Diode Pulsed Current ISM 72 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V IS=18A,VGS=0V 2
Reverse Recovery Time trr 370 ns IF=18A,di/dt=100A/us 2
Reverse Recovery Charge Qrr 0.95 uC IF=18A,di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: WTM18N20VD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wtm18n20vd-etched.step / wtm18n20vd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wtm18n20vd.step / wtm18n20vd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WPMtek(Wei Pan Microelectronics) datasheet (8 pp, sha256 48855a569265d132, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF