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ZXTP25060BFHTA

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Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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ZXTP25060BFHTA

Diodes Incorporated · Bipolar Transistors - BJT · SOT-23

ZXTP25060BFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base of the PNP transistor, with emitter-base voltage limited to VEBO of -7 V.
2 E passive Emitter of the PNP transistor, with emitter-collector reverse blocking voltage VECO of -7 V.
3 C passive Collector of the PNP transistor, rated for IC of -3 A continuous, ICM of -9 A peak and VCEO of -60 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -100 V TA = 25°C 2
Collector-Emitter Voltage (forward blocking) VCEX -100 V TA = 25°C 2
Collector-Emitter Voltage VCEO -60 V TA = 25°C 2
Emitter-Collector Voltage (reverse blocking) VECO -7 V TA = 25°C 2
Emitter-Base Voltage VEBO -7 V TA = 25°C 2
Continuous Collector Current IC -3 A TA = 25°C 2
Peak pulse Current ICM -9 A TA = 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation PD 0.73 W Note 4: 15mm x 15mm x 1.6mm FR4, 1oz copper, still air 2
Power Dissipation PD 1.05 W Note 5: 25mm x 25mm 2oz copper 2
Power Dissipation PD 1.25 W Note 6: 50mm x 50mm 2oz copper 2
Power Dissipation PD 1.81 W Note 7: 50mm x 50mm 2oz copper, t<5secs 2
Thermal Resistance, Junction to Ambient RθJA 171 °C/W Note 4 2
Thermal Resistance, Junction to Ambient RθJA 119 °C/W Note 5 2
Thermal Resistance, Junction to Ambient RθJA 100 °C/W Note 6 2
Thermal Resistance, Junction to Ambient RθJA 69 °C/W Note 7, t<5secs 2
Thermal Resistance, Junction to Lead RθJL 74.95 °C/W Note 8 2
Collector-Base Breakdown Voltage BVCBO -100 -120 V IC = -100 µA 4
Collector-Emitter Breakdown Voltage (forward blocking) BVCEX -100 -120 V IC = -100 µA, RBE < 1kΩ or -0.25V < VBE < 1V 4
Collector-Emitter Breakdown Voltage (base open) BVCEO -60 -80 V IC = -10mA 4
Emitter-Collector Breakdown Voltage (Reverse blocking) BVECO -7 -8.6 V IE = -100µA 4
Emitter-Base Breakdown Voltage BVEBO -7 -8.1 V IE = -100µA 4
Collector Cutoff Current ICBO -50 nA VCB = -80V 4
Collector Cutoff Current ICBO -20 µA VCB = -80V, TA = 100°C 4
Collector emitter Cutoff Current ICEX -100 nA VCE = -80V, RBE < 1kΩ or -0.25V < VBE < 1V 4
Emitter Cutoff Current IEBO -50 nA VEB = -6V 4
Static Forward Current Transfer Ratio hFE 100 200 300 IC = -10mA, VCE = -2V 4
Static Forward Current Transfer Ratio hFE 75 150 IC = -1A, VCE = -2V 4
Static Forward Current Transfer Ratio hFE 30 60 IC = -3A, VCE = -2V 4
Base-Emitter Saturation Voltage VBE(sat) -940 -1040 mV IC = -3A, IB = -300mA 4
Base-Emitter turn-on Voltage VBE(on) -830 -930 mV IC = -3A, VCE = -2V 4
Collector-Emitter Saturation Voltage VCE(sat) -45 -55 mV IC = -0.5A, IB = -50mA 4
Collector-Emitter Saturation Voltage VCE(sat) -100 -135 mV IC = -0.5A, IB = -10mA 4
Collector-Emitter Saturation Voltage VCE(sat) -70 -85 mV IC = -1A, IB = -100mA 4
Collector-Emitter Saturation Voltage VCE(sat) -175 -235 mV IC = -3A, IB = -300mA 4
Transition Frequency fT 250 MHz IC = -100mA, VCE = -5V, f = 100MHz 4
Collector Output Capacitance COBO 17.6 30 pF VCB = -10V, f = 1MHz 4
Turn-on time t(on) 26.5 ns VCC = -10V, IC = -500mA, IB1 = IB2 = -50mA 4
Turn-off time t(off) 291 ns VCC = -10V, IC = -500mA, IB1 = IB2 = -50mA 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Matte Tin Finish • Weight: 0.008 grams (Approximate) 1

CAD (KiCad official)

  • Symbol: ZXTP25060BFHTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxtp25060bfhta-etched.step / zxtp25060bfhta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtp25060bfhta.step / zxtp25060bfhta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 24b2e3a906b61bda, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF