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ZXTP25040DFHTA

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Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

ZXTP25040DFHTA

Diodes Incorporated · Bipolar Transistors - BJT · SOT-23

ZXTP25040DFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; the base-emitter breakdown is BVEBO of -7V minimum and the continuous collector current is -3A.
2 E passive Emitter; the reverse blocking voltage (VECO) is -3V and the emitter-base voltage (VEBO) is -7V.
3 C passive Collector; the collector-emitter voltage (VCEO) is -40V, the collector-base voltage (VCBO) is -45V, the continuous current is -3A and the peak pulse current is -9A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -45 V TA = +25°C 2
Collector-Emitter Voltage (Forward Blocking) VCEO -40 V TA = +25°C 2
Emitter-collector voltage (Reverse Blocking) VECO -3 V TA = +25°C 2
Emitter-Base Voltage VEBO -7 V TA = +25°C 2
Continuous Collector Current IC -3 A TA = +25°C 2
Peak Pulse Current ICM -9 A TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation (Note 5) PD 0.73 W Note 5, TA = +25°C 2
Power Dissipation (Note 6) PD 0.78 W Note 6, TA = +25°C 2
Power Dissipation (Note 7) PD 1.05 W Note 7, TA = +25°C 2
Power Dissipation (Note 8) PD 1.25 W Note 8, TA = +25°C 2
Power Dissipation (Note 9) PD 1.81 W Note 9, TA = +25°C 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 171 °C/W Note 5 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 160 °C/W Note 6 2
Thermal Resistance, Junction to Ambient (Note 7) RθJA 119 °C/W Note 7 2
Thermal Resistance, Junction to Ambient (Note 8) RθJA 100 °C/W Note 8 2
Thermal Resistance, Junction to Ambient (Note 9) RθJA 69 °C/W Note 9, t<5secs 2
Thermal Resistance, Junction to Lead RθJL 74.95 °C/W Note 10 2
Thermal Resistance, Junction to Case RθJC 45 °C/W Note 11 2
Collector-Base Breakdown Voltage BVCBO -45 -75 V IC = -100µA 4
Collector-Emitter Breakdown Voltage BVCEO -40 -65 V IC = -10mA 4
Emitter-Base Breakdown Voltage BVEBO -7 -8.2 V IE = -100µA 4
Emitter-Collector Breakdown Voltage BVECO -3 -8.7 V IE = -100µA 4
Collector-Base Cutoff Current ICBO -50 nA VCB = -45V 4
Collector-Base Cutoff Current ICBO -0.5 µA VCB = -45V, Tamb = +100°C 4
Emitter-Base Cutoff Current IEBO -50 nA VEB = -5.6V 4
Static Forward Current Transfer Ratio hFE 300 450 900 IC = -10mA, VCE = -2V 4
Static Forward Current Transfer Ratio hFE 200 300 IC = -1A, VCE = -2V 4
Static Forward Current Transfer Ratio hFE 30 60 IC = -3A, VCE = -2V 4
Collector-Emitter Saturation Voltage VCE(sat) -170 -260 mV IC = -1A, IB = -20mA 4
Collector-Emitter Saturation Voltage VCE(sat) -65 -85 mV IC = -1A, IB = -100mA 4
Collector-Emitter Saturation Voltage VCE(sat) -165 -220 mV IC = -3A, IB = -300mA 4
Base-Emitter Saturation Voltage VBE(sat) -930 -1000 mV IC = -3A, IB = -300mA 4
Base-Emitter Turn-on Voltage VBE(on) -830 -900 mV IC = -3A, VCE = -2V 4
Output Capacitance Cobo 17.4 pF VCB = -10V, f = 1MHz 4
Transition Frequency fT 270 MHz VCE = -10V, IC = -50mA, f = 100MHz 4
Turn-on Time t(on) 75.5 ns VCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA 4
Turn-off Time t(off) 320 ns VCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA 4
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
ESD Machine Model ESD MM 400 V JEDEC Class C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTP25040DFHTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxtp25040dfhta-etched.step / zxtp25040dfhta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtp25040dfhta.step / zxtp25040dfhta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 38ac1373a5c9eb55, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF