component
ZXTP25020BFHTA
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownZXTP25020BFHTA
Diodes Incorporated · Bipolar (BJT) · SOT-23
ZXTP25020BFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO limit is -7V and IEBO is below -1nA typ at VEB = -5.6V. |
| 2 | E | passive | Emitter of the PNP transistor; reverse blocking voltage VECO is -7V and VCEO between collector and emitter is -20V. |
| 3 | C | passive | Collector of the PNP transistor; VCBO -40V, VCEX -40V, continuous IC -4A and peak ICM -10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -40 | V | 2 | |||
| Collector-emitter voltage (forward blocking) | VCEX | -40 | V | 2 | |||
| Collector-emitter voltage | VCEO | -20 | V | 2 | |||
| Emitter-collector voltage (reverse blocking) | VECO | -7 | V | 2 | |||
| Emitter-base voltage | VEBO | -7 | V | 2 | |||
| Continuous collector current | IC | -4 | A | note (b) | 2 | ||
| Peak pulse current | ICM | -10 | A | 2 | |||
| Power dissipation | PD | 0.73 | W | Tamb=25°C, note (a) | 2 | ||
| Power dissipation | PD | 1.05 | W | Tamb=25°C, note (b) | 2 | ||
| Power dissipation | PD | 1.25 | W | Tamb=25°C, note (c) | 2 | ||
| Power dissipation | PD | 1.81 | W | Tamb=25°C, note (d) | 2 | ||
| Operating and storage temperature range | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Junction to ambient | RJA | 171 | °C/W | note (a) | 2 | ||
| Junction to ambient | RJA | 119 | °C/W | note (b) | 2 | ||
| Junction to ambient | RJA | 100 | °C/W | note (c) | 2 | ||
| Junction to ambient | RJA | 69 | °C/W | note (d) | 2 | ||
| Collector-base breakdown voltage | BVCBO | -40 | -60 | V | IC = -100A | 4 | |
| Collector-emitter breakdown voltage (forward blocking) | BVCEX | -40 | -60 | V | IE = -100A (*) RBE < 1k or 1V < VBE < -0.25V | 4 | |
| Collector-emitter breakdown voltage (base open) | BVCEO | -20 | -35 | V | IC = -10mA(*) | 4 | |
| Emitter-base breakdown voltage | BVEBO | -7 | -8.2 | V | IE = -100A | 4 | |
| Emitter-collector breakdown voltage (reverse blocking) | BVECX | -6 | -8 | V | IE = -100A (*) RBC < 10k or 0.25 < VBC < -0.25V | 4 | |
| Emitter-collector breakdown voltage (base open) | BVECO | -7 | -8.6 | V | IE = -100A(*) | 4 | |
| Collector-base cut-off current | ICBO | -50 | nA | VCB = -32V | 4 | ||
| Collector-base cut-off current | ICBO | -20 | µA | VCB = -32V, Tamb= 100°C | 4 | ||
| Collector-emitter cut-off current | ICEX | 100 | nA | VCE = -32V; RBE < 1k or 1V < VBE < -0.25V | 4 | ||
| Emitter-base cut-off current | IEBO | -50 | nA | VEB = -5.6V | 4 | ||
| Collector-emitter saturation voltage | VCE(sat) | -44 | -60 | mV | IC = -1A, IB = -100mA(*) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | -80 | -110 | mV | IC = -1A, IB = -20mA(*) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | -125 | -190 | mV | IC = -2A, IB = -40mA(*) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | -160 | -210 | mV | IC = -4A, IB = -200mA(*) | 4 | |
| Base-emitter saturation voltage | VBE(sat) | -930 | -1000 | mV | IC = -4A, IB = -200mA(*) | 4 | |
| Base-emitter turn-on voltage | VBE(on) | -820 | -900 | mV | IC = -4A, VCE = -2V(*) | 4 | |
| Static forward current transfer ratio | hFE | 100 | 200 | 300 | IC = -10mA, VCE = -2V(*) | 4 | |
| Static forward current transfer ratio | hFE | 80 | 160 | IC = -1A, VCE = -2V(*) | 4 | ||
| Static forward current transfer ratio | hFE | 50 | 100 | IC = -4A, VCE = -2V(*) | 4 | ||
| Static forward current transfer ratio | hFE | 45 | IC = -10A, VCE = -2V(*) | 4 | |||
| Transition frequency | fT | 250 | MHz | IC = -50mA, VCE = -10V f = 100MHz | 4 | ||
| Output capacitance | COBO | 32.5 | 40 | pF | VCB = -10V, f = 1MHz(*) | 4 |
CAD (KiCad official)
- Symbol:
ZXTP25020BFHTA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
zxtp25020bfhta-etched.step/zxtp25020bfhta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtp25020bfhta.step/zxtp25020bfhta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
1c2384b3176260f8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).