component
ZXTP2025FTA
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXTP2025FTA
Diodes Incorporated · Bipolar Transistors - BJT · SOT-23
ZXTP2025FTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives IB of -1.2A maximum and VEBO of -7.0V maximum. |
| 2 | E | passive | Emitter of the PNP transistor; the datasheet gives VEBO of -7.0V maximum. |
| 3 | C | passive | Collector of the PNP transistor; the datasheet gives VCEO of -50V, VCBO of -50V, continuous IC of -5A and peak ICM of -10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -50 | V | 2 | |||
| Collector-emitter voltage | VCEO | -50 | V | 2 | |||
| Emitter-base voltage | VEBO | -7 | V | 2 | |||
| Peak pulse current | ICM | -10 | A | 2 | |||
| Continuous collector current | IC | -5 | A | (c) | 2 | ||
| Base current | IB | -1.2 | A | 2 | |||
| Power dissipation (a) | PD | 1 | W | TA=25°C (a); derating 8.0 mW/°C | 2 | ||
| Power dissipation (b) | PD | 1.2 | W | TA=25°C (b); derating 9.6 mW/°C | 2 | ||
| Power dissipation (c) | PD | 1.56 | W | TA=25°C (c); derating 12.5 mW/°C | 2 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance junction to ambient (a) | RθJA | 125 | °C/W | 18mm x 18mm x 1.6mm FR4, 2 oz Cu, still air | 2 | ||
| Thermal resistance junction to ambient (b) | RθJA | 104 | °C/W | 30mm x 30mm x 1.6mm FR4, 2 oz Cu, still air | 2 | ||
| Thermal resistance junction to ambient (c) | RθJA | 80 | °C/W | As (b), t<5secs | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | -50 | 100 | V | IC=-100µA | 4 | |
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | 70 | V | IC=-10mA (a) | 4 | |
| Emitter-base breakdown voltage | V(BR)EBO | -7 | 8.5 | V | IE=-100µA | 4 | |
| Collector-emitter cut-off current | ICEV | -20 | nA | VCE=-40V, VBE = 1V | 4 | ||
| Collector-base cut-off current | ICBO | -20 | nA | VCB=-40V | 4 | ||
| Emitter-base cut-off current | IEBO | -10 | nA | VEB=-6V | 4 | ||
| Static forward current transfer ratio | HFE | 180 | 380 | 560 | IC=-10mA, VCE=-2V(a) | 4 | |
| Static forward current transfer ratio | HFE | 200 | 350 | IC=-500mA, VCE=-2V(a) | 4 | ||
| Static forward current transfer ratio | HFE | 70 | 120 | Ic=-5A, VCE=-2V(a) | 4 | ||
| Static forward current transfer ratio | HFE | 12 | 30 | Ic=-10A, VCE=-2V(a) | 4 | ||
| Collector-emitter saturation voltage | VCE(sat) | -11 | -20 | mV | IC=-100mA, IB=-10mA(a) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | -40 | -60 | mV | IC=-1A, IB=-100mA(a) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | -230 | mV | IC=-2A, IB=-40mA(a) | 4 | ||
| Collector-emitter saturation voltage | VCE(sat) | -200 | mV | IC=-5A, IB=-500mA(a) | 4 | ||
| Base-emitter saturation voltage | VBE(sat) | -0.81 | -0.88 | V | IC=-2A, IB=-40mA(a) | 4 | |
| Base-emitter saturation voltage | VBE(sat) | -0.95 | -1.05 | V | IC=-5A, IB=-500mA(a) | 4 | |
| Base-emitter turn-on voltage | VBE(on) | -0.82 | -0.92 | V | IC=-5A, VCE=-2V(a) | 4 | |
| Transition frequency | fT | 190 | MHz | Ic=-500mA, VCE=-10V, f=50MHz | 4 | ||
| Output capacitance | Cobo | 42 | pF | VCB=-10V, f=1MHz | 4 | ||
| Delay time | t(d) | 14 | ns | VCC=-12V, IC=-2.5A, IB1=IB2=-125mA | 4 | ||
| Rise time | t(r) | 23 | ns | VCC=-12V, IC=-2.5A, IB1=IB2=-125mA | 4 | ||
| Storage time | t(stg) | 240 | ns | VCC=-12V, IC=-2.5A, IB1=IB2=-125mA | 4 | ||
| Fall time | t(f) | 30 | ns | VCC=-12V, IC=-2.5A, IB1=IB2=-125mA | 4 |
CAD (KiCad official)
- Symbol:
ZXTP2025FTA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
zxtp2025fta-etched.step/zxtp2025fta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtp2025fta.step/zxtp2025fta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
d3f862f0f348c5d8, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXTP2025FTA
**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-23
ZXTP2025FTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives IB of -1.2A maximum and VEBO of -7.0V maximum. |
| 2 | E | passive | Emitter of the PNP transistor; the datasheet gives VEBO of -7.0V maximum. |
| 3 | C | passive | Collector of the PNP transistor; the datasheet gives VCEO of -50V, VCBO of -50V, continuous IC of -5A and peak ICM of -10A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | -50 | V | | 2 |
| Collector-emitter voltage | VCEO | | | -50 | V | | 2 |
| Emitter-base voltage | VEBO | | | -7 | V | | 2 |
| Peak pulse current | ICM | | | -10 | A | | 2 |
| Continuous collector current | IC | | | -5 | A | (c) | 2 |
| Base current | IB | | | -1.2 | A | | 2 |
| Power dissipation (a) | PD | | | 1 | W | TA=25°C (a); derating 8.0 mW/°C | 2 |
| Power dissipation (b) | PD | | | 1.2 | W | TA=25°C (b); derating 9.6 mW/°C | 2 |
| Power dissipation (c) | PD | | | 1.56 | W | TA=25°C (c); derating 12.5 mW/°C | 2 |
| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 2 |
| Thermal resistance junction to ambient (a) | RθJA | | | 125 | °C/W | 18mm x 18mm x 1.6mm FR4, 2 oz Cu, still air | 2 |
| Thermal resistance junction to ambient (b) | RθJA | | | 104 | °C/W | 30mm x 30mm x 1.6mm FR4, 2 oz Cu, still air | 2 |
| Thermal resistance junction to ambient (c) | RθJA | | | 80 | °C/W | As (b), t<5secs | 2 |
| Collector-base breakdown voltage | V(BR)CBO | -50 | 100 | | V | IC=-100µA | 4 |
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | 70 | | V | IC=-10mA (a) | 4 |
| Emitter-base breakdown voltage | V(BR)EBO | -7 | 8.5 | | V | IE=-100µA | 4 |
| Collector-emitter cut-off current | ICEV | | | -20 | nA | VCE=-40V, VBE = 1V | 4 |
| Collector-base cut-off current | ICBO | | | -20 | nA | VCB=-40V | 4 |
| Emitter-base cut-off current | IEBO | | | -10 | nA | VEB=-6V | 4 |
| Static forward current transfer ratio | HFE | 180 | 380 | 560 | | IC=-10mA, VCE=-2V(a) | 4 |
| Static forward current transfer ratio | HFE | 200 | 350 | | | IC=-500mA, VCE=-2V(a) | 4 |
| Static forward current transfer ratio | HFE | 70 | 120 | | | Ic=-5A, VCE=-2V(a) | 4 |
| Static forward current transfer ratio | HFE | 12 | 30 | | | Ic=-10A, VCE=-2V(a) | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | -11 | -20 | mV | IC=-100mA, IB=-10mA(a) | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | -40 | -60 | mV | IC=-1A, IB=-100mA(a) | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | | -230 | mV | IC=-2A, IB=-40mA(a) | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | | -200 | mV | IC=-5A, IB=-500mA(a) | 4 |
| Base-emitter saturation voltage | VBE(sat) | | -0.81 | -0.88 | V | IC=-2A, IB=-40mA(a) | 4 |
| Base-emitter saturation voltage | VBE(sat) | | -0.95 | -1.05 | V | IC=-5A, IB=-500mA(a) | 4 |
| Base-emitter turn-on voltage | VBE(on) | | -0.82 | -0.92 | V | IC=-5A, VCE=-2V(a) | 4 |
| Transition frequency | fT | | 190 | | MHz | Ic=-500mA, VCE=-10V, f=50MHz | 4 |
| Output capacitance | Cobo | | 42 | | pF | VCB=-10V, f=1MHz | 4 |
| Delay time | t(d) | | 14 | | ns | VCC=-12V, IC=-2.5A, IB1=IB2=-125mA | 4 |
| Rise time | t(r) | | 23 | | ns | VCC=-12V, IC=-2.5A, IB1=IB2=-125mA | 4 |
| Storage time | t(stg) | | 240 | | ns | VCC=-12V, IC=-2.5A, IB1=IB2=-125mA | 4 |
| Fall time | t(f) | | 30 | | ns | VCC=-12V, IC=-2.5A, IB1=IB2=-125mA | 4 |
## CAD (KiCad official)
- Symbol: `ZXTP2025FTA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `zxtp2025fta-etched.step` / `zxtp2025fta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtp2025fta.step` / `zxtp2025fta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](docs/zxtp2025fta-datasheet.pdf) (6 pp, sha256 `d3f862f0f348c5d8`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxtp2025fta-datasheet.pdf)