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ZXTP19060CZTA

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

ZXTP19060CZTA

Diodes Incorporated · Bipolar Transistors - BJT · SOT-89

ZXTP19060CZTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; saturation specified up to IB = -450mA, absolute maximum base current -1A, VEBO -7V.
2 C passive Collector, also the exposed collector pad/tab; VCEO -60V, VCBO -60V, continuous IC -4.5A, peak ICM -7A.
3 E passive Emitter of the PNP transistor; emitter-base voltage VEBO -7V and emitter-collector reverse blocking voltage VECX -7V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -60 V TA = +25°C 2
Collector-Emitter Voltage VCEO -60 V TA = +25°C 2
Emitter-Collector Voltage (Reverse Blocking) VECX -7 V TA = +25°C 2
Emitter-Base Voltage VEBO -7 V TA = +25°C 2
Continuous Collector Current IC -4.5 A TA = +25°C 2
Peak Pulse Current ICM -7 A TA = +25°C 2
Base Current IB -1 A TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO -110 -60 V IC = -100µA 4
Collector-Emitter Breakdown Voltage BVCEO -90 -60 V IC = -10mA 4
Emitter-Collector Breakdown Voltage (Reverse Blocking) BVECX -8.4 -7 V IE = -100µA, RBC <1kΩ or 0.25V > VBC > -0.25V 4
Emitter-Collector Breakdown Voltage (Reverse Blocking) BVECO -8.8 -7 V IE = -100µA 4
Emitter-Base Breakdown Voltage BVEBO -8.4 -7 V IE = -100µA 4
Collector-Base Cutoff Current ICBO -1 -50 nA VCB = -60V 4
Collector-Base Cutoff Current ICBO -0.5 µA VCB = -60V, TA = +100°C 4
Emitter Cutoff Current IEBO -1 -50 nA VEB = -6V 4
DC Current Transfer Static Ratio hFE 200 330 500 IC = -100mA, VCE = -2V 4
DC Current Transfer Static Ratio hFE 160 260 IC = -1A, VCE = -2V 4
DC Current Transfer Static Ratio hFE 25 45 IC = -4.5A, VCE = -2V 4
Collector-Emitter Saturation Voltage VCE(sat) -62 -80 mV IC = -1A, IB = -100mA 4
Base-Emitter Saturation Voltage VBE(sat) -965 -1050 mV IC = -4.5A, IB = -450mA 4
Base-Emitter Turn-on Voltage VBE(on) -875 -1000 mV IC = -4.5A, VCE = -2V 4
Input Capacitance Cibo 280 400 pF VEB = -0.5V, f = 1MHz 4
Output Capacitance Cobo 29.5 40 pF VCB = -10V, f = 1MHz 4
Transitional Frequency fT 180 MHz IE = -50mA, VCE = -10V, f = 50MHz 4
Delay Time td 24.3 ns IC = -500mA, VCC = -10V, IB1 = -IB2 = -50mA 4
Rise Time tr 13.2 ns IC = -500mA, VCC = -10V, IB1 = -IB2 = -50mA 4
Storage Time ts 456 ns IC = -500mA, VCC = -10V, IB1 = -IB2 = -50mA 4
Fall Time tf 68.2 ns IC = -500mA, VCC = -10V, IB1 = -IB2 = -50mA 4
Thermal Resistance, Junction to Ambient RθJA 117 °C/W Note 5: 15mm × 15mm 1oz copper 2
Thermal Resistance, Junction to Ambient RθJA 68 °C/W Note 6: 25mm × 25mm 2oz copper 2
Thermal Resistance, Junction to Ambient RθJA 51 °C/W Note 7: 50mm × 50mm 2oz copper 2
Thermal Resistance, Junction to Ambient RθJA 31 °C/W Note 8: 50mm × 50mm 2oz copper, t<10 seconds 2
Thermal Resistance, Junction to Lead RθJL 4.7 °C/W Note 9 2
Power Dissipation PD 1.1 W Note 5, TA = +25°C 2
Power Dissipation PD 1.8 W Note 6, TA = +25°C 2
Power Dissipation PD 2.4 W Note 7, TA = +25°C 2
Power Dissipation PD 4.46 W Note 8, TA = +25°C 2
Power Dissipation PD 26.7 W Note 9, TA = +25°C 2
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
ESD Machine Model ESD MM 400 V JEDEC Class C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTP19060CZTA
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: zxtp19060czta-etched.step / zxtp19060czta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtp19060czta.step / zxtp19060czta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 85102166f076d965, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF