component
ZXTP19020DZTA
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXTP19020DZTA
Diodes Incorporated · Bipolar Transistors - BJT · SOT-89
ZXTP19020DZTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max is -7V and continuous base current IB max is -1A. |
| 2 | C | passive | Collector of the PNP transistor, also connected to the metal tab; VCEO is -20V, VCBO is -25V and continuous IC is -6A (peak -15A). |
| 3 | E | passive | Emitter of the PNP transistor; the emitter-collector reverse-blocking voltage (BVECO) is at least -4V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -25 | -55 | V | IC = -100µA | 4 | |
| Collector-Emitter Breakdown Voltage (Notes 9) | BVCEO | -20 | -50 | V | IC = -10mA | 4 | |
| Emitter-Collector breakdown voltage (reverse blocking) | BVECX | -4 | -8.6 | V | IE = -100µA, RBC < 1kΩ or 0.25V > VBC > -0.25V | 4 | |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | -8.2 | V | IE = -100µA | 4 | |
| Collector Cutoff Current | ICBO | -50 | nA | VCB = -25V | 4 | ||
| Collector Cutoff Current | ICBO | -500 | nA | VCB = -25V, TA = 100°C | 4 | ||
| Emitter Cutoff Current | IEBO | -50 | nA | VEB = -5.6V | 4 | ||
| DC current transfer static ratio (Notes 9) | hFE | 300 | 450 | 900 | - | IC = -100mA, VCE = -2V | 4 |
| DC current transfer static ratio (Notes 9) | hFE | 200 | 290 | - | IC = -2A, VCE = -2V | 4 | |
| DC current transfer static ratio (Notes 9) | hFE | 65 | 110 | - | IC = -6A, VCE = -2V | 4 | |
| Collector-Emitter Saturation Voltage (Notes 9) | VCE(sat) | -40 | -47 | mV | IC = -1A, IB = -100mA | 4 | |
| Collector-Emitter Saturation Voltage (Notes 9) | VCE(sat) | -100 | -130 | mV | IC = -1A, IB = -10mA | 4 | |
| Collector-Emitter Saturation Voltage (Notes 9) | VCE(sat) | -115 | -145 | mV | IC = -2A, IB = -40mA | 4 | |
| Collector-Emitter Saturation Voltage (Notes 9) | VCE(sat) | -225 | -275 | mV | IC = -6A, IB = -300mA | 4 | |
| Base-Emitter Saturation Voltage (Notes 9) | VBE(sat) | -1000 | -1100 | mV | IC = -6A, IB = -300mA | 4 | |
| Base-Emitter Turn-on Voltage (Notes 9) | VBE(on) | -865 | -1000 | mV | IC = -6A, VCE = -2V | 4 | |
| Input Capacitance | Cibo | 400 | pF | VEB = -0.5V, f = 1MHz | 4 | ||
| Output capacitance | Cobo | 36 | 45 | pF | VCB = -10V, f = 1MHz | 4 | |
| Collector-Base Voltage | VCBO | -25 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | -20 | V | 2 | |||
| Emitter-Base Voltage | VECO | -4 | V | 2 | |||
| Emitter-Base Voltage | VEBO | -7 | V | 2 | |||
| Continuous Collector Current | IC | -6 | A | Note 6 (50mm x 50mm 2oz Cu PCB) | 2 | ||
| Base current | IB | -1 | A | 2 | |||
| Peak Pulse Current | ICM | -15 | A | 2 | |||
| Power Dissipation | PD | 1.1 | W | Note 4: 15mm x 15mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 | ||
| Power Dissipation | PD | 1.8 | W | Note 5: 25mm x 25mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 | ||
| Power Dissipation | PD | 2.4 | W | Note 6: 50mm x 50mm x 0.6mm FR4 PCB, 2oz Cu, still air | 2 | ||
| Power Dissipation | PD | 4.46 | W | Note 7: as Note 6, measured at t<5 seconds | 2 | ||
| Power Dissipation | PD | 26.7 | W | Note 8: junction to case (collector tab) | 2 | ||
| Linear derating factor | PD | 8.8 | mW/°C | Note 4: 15mm x 15mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 | ||
| Linear derating factor | PD | 14.4 | mW/°C | Note 5: 25mm x 25mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 | ||
| Linear derating factor | PD | 19.2 | mW/°C | Note 6: 50mm x 50mm x 0.6mm FR4 PCB, 2oz Cu, still air | 2 | ||
| Linear derating factor | PD | 35.7 | mW/°C | Note 7: as Note 6, measured at t<5 seconds | 2 | ||
| Linear derating factor | PD | 213 | mW/°C | Note 8: junction to case (collector tab) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 117 | °C/W | Note 4: 15mm x 15mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 68 | °C/W | Note 5: 25mm x 25mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 51 | °C/W | Note 6: 50mm x 50mm x 0.6mm FR4 PCB, 2oz Cu, still air | 2 | ||
| Thermal Resistance, Junction to Leads | RθJL | 4.69 | °C/W | Note 8: junction to case (collector tab) | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Matte Tin Finish • Weight: 0.052 grams (Approximate) | 1 |
CAD (KiCad official)
- Symbol:
ZXTP19020DZTA - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
zxtp19020dzta-etched.step/zxtp19020dzta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtp19020dzta.step/zxtp19020dzta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
97ac58407b6cb0d5, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXTP19020DZTA
**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-89
ZXTP19020DZTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max is -7V and continuous base current IB max is -1A. |
| 2 | C | passive | Collector of the PNP transistor, also connected to the metal tab; VCEO is -20V, VCBO is -25V and continuous IC is -6A (peak -15A). |
| 3 | E | passive | Emitter of the PNP transistor; the emitter-collector reverse-blocking voltage (BVECO) is at least -4V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -25 | -55 | | V | IC = -100µA | 4 |
| Collector-Emitter Breakdown Voltage (Notes 9) | BVCEO | -20 | -50 | | V | IC = -10mA | 4 |
| Emitter-Collector breakdown voltage (reverse blocking) | BVECX | -4 | -8.6 | | V | IE = -100µA, RBC < 1kΩ or 0.25V > VBC > -0.25V | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | -8.2 | | V | IE = -100µA | 4 |
| Collector Cutoff Current | ICBO | | | -50 | nA | VCB = -25V | 4 |
| Collector Cutoff Current | ICBO | | | -500 | nA | VCB = -25V, TA = 100°C | 4 |
| Emitter Cutoff Current | IEBO | | | -50 | nA | VEB = -5.6V | 4 |
| DC current transfer static ratio (Notes 9) | hFE | 300 | 450 | 900 | - | IC = -100mA, VCE = -2V | 4 |
| DC current transfer static ratio (Notes 9) | hFE | 200 | 290 | | - | IC = -2A, VCE = -2V | 4 |
| DC current transfer static ratio (Notes 9) | hFE | 65 | 110 | | - | IC = -6A, VCE = -2V | 4 |
| Collector-Emitter Saturation Voltage (Notes 9) | VCE(sat) | | -40 | -47 | mV | IC = -1A, IB = -100mA | 4 |
| Collector-Emitter Saturation Voltage (Notes 9) | VCE(sat) | | -100 | -130 | mV | IC = -1A, IB = -10mA | 4 |
| Collector-Emitter Saturation Voltage (Notes 9) | VCE(sat) | | -115 | -145 | mV | IC = -2A, IB = -40mA | 4 |
| Collector-Emitter Saturation Voltage (Notes 9) | VCE(sat) | | -225 | -275 | mV | IC = -6A, IB = -300mA | 4 |
| Base-Emitter Saturation Voltage (Notes 9) | VBE(sat) | | -1000 | -1100 | mV | IC = -6A, IB = -300mA | 4 |
| Base-Emitter Turn-on Voltage (Notes 9) | VBE(on) | | -865 | -1000 | mV | IC = -6A, VCE = -2V | 4 |
| Input Capacitance | Cibo | | | 400 | pF | VEB = -0.5V, f = 1MHz | 4 |
| Output capacitance | Cobo | | 36 | 45 | pF | VCB = -10V, f = 1MHz | 4 |
| Collector-Base Voltage | VCBO | | | -25 | V | | 2 |
| Collector-Emitter Voltage | VCEO | | | -20 | V | | 2 |
| Emitter-Base Voltage | VECO | | | -4 | V | | 2 |
| Emitter-Base Voltage | VEBO | | | -7 | V | | 2 |
| Continuous Collector Current | IC | | | -6 | A | Note 6 (50mm x 50mm 2oz Cu PCB) | 2 |
| Base current | IB | | | -1 | A | | 2 |
| Peak Pulse Current | ICM | | | -15 | A | | 2 |
| Power Dissipation | PD | | | 1.1 | W | Note 4: 15mm x 15mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 |
| Power Dissipation | PD | | | 1.8 | W | Note 5: 25mm x 25mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 |
| Power Dissipation | PD | | | 2.4 | W | Note 6: 50mm x 50mm x 0.6mm FR4 PCB, 2oz Cu, still air | 2 |
| Power Dissipation | PD | | | 4.46 | W | Note 7: as Note 6, measured at t<5 seconds | 2 |
| Power Dissipation | PD | | | 26.7 | W | Note 8: junction to case (collector tab) | 2 |
| Linear derating factor | PD | | 8.8 | | mW/°C | Note 4: 15mm x 15mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 |
| Linear derating factor | PD | | 14.4 | | mW/°C | Note 5: 25mm x 25mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 |
| Linear derating factor | PD | | 19.2 | | mW/°C | Note 6: 50mm x 50mm x 0.6mm FR4 PCB, 2oz Cu, still air | 2 |
| Linear derating factor | PD | | 35.7 | | mW/°C | Note 7: as Note 6, measured at t<5 seconds | 2 |
| Linear derating factor | PD | | 213 | | mW/°C | Note 8: junction to case (collector tab) | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 117 | | °C/W | Note 4: 15mm x 15mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 68 | | °C/W | Note 5: 25mm x 25mm x 0.6mm FR4 PCB, 1oz Cu, still air | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 51 | | °C/W | Note 6: 50mm x 50mm x 0.6mm FR4 PCB, 2oz Cu, still air | 2 |
| Thermal Resistance, Junction to Leads | RθJL | | 4.69 | | °C/W | Note 8: junction to case (collector tab) | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | • Terminals: Matte Tin Finish • Weight: 0.052 grams (Approximate) | 1 |
## CAD (KiCad official)
- Symbol: `ZXTP19020DZTA`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `zxtp19020dzta-etched.step` / `zxtp19020dzta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtp19020dzta.step` / `zxtp19020dzta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/ZXTP19020DZTA.pdf) (7 pp, sha256 `97ac58407b6cb0d5`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxtp19020dzta-datasheet.pdf)