component
ZXTP03200BGTA
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
ZXTP03200BGTA
Diodes Incorporated · Bipolar (BJT) · SOT-223-4
ZXTP03200BGTA from Diodes Incorporated, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet pin-out shows it as the bottom lead, with VEBO limited to -7V and IB to -1A. |
| 2 | C | passive | Collector of the PNP transistor, rated VCEO -200V, VCBO -220V, IC -2A continuous and ICM -5A peak. |
| 3 | E | passive | Emitter of the PNP transistor, the top lead in the datasheet pin-out. |
| 4 | C | passive | Collector tab, which is the large heatsink tab on the opposite side from the leads and is electrically the same as the collector lead; thermal resistance is specified with copper on the collector lead. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-223-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BVCER) | BVCER | -220 | -245 | V | IC = -1µA, RB ≤ 1kΩ | 4 | |
| Collector-Base Breakdown Voltage | BVCBO | -220 | -245 | V | IC = -100µA | 4 | |
| Collector-Emitter Breakdown Voltage (BVCEO) | BVCEO | -200 | -225 | V | IC = -10mA | 4 | |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | -8.4 | V | IE = -100µA | 4 | |
| DC Current Transfer Static Ratio | hFE | 100 | 195 | IC = -10mA, VCE = -5V | 4 | ||
| DC Current Transfer Static Ratio | hFE | 100 | 170 | 300 | IC = -1A, VCE = -5V | 4 | |
| DC Current Transfer Static Ratio | hFE | 20 | 50 | IC = -2A, VCE = -5V | 4 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Collector Cut-Off Current | ICBO | -50 | nA | VCB = -200V | 4 | ||
| Collector Cut-Off Current | ICBO | -0.5 | µA | VCB = -200V, TA = +100°C | 4 | ||
| Emitter Cut-Off Current | IEBO | -10 | nA | VEB = -6V | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -37 | -50 | mV | IC = -0.1A, IB = -10mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -130 | -155 | mV | IC = -0.5A, IB = -25mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -135 | -160 | mV | IC = -1A, IB = -100mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -180 | -275 | mV | IC = -2A, IB = -400mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -955 | -1100 | mV | IC = -2A, IB = -400mA | 4 | |
| Base-Emitter Turn-On Voltage | VBE(on) | -860 | -1000 | mV | IC = -2A, VCE = -5V | 4 | |
| Collector-Base Voltage | VCBO | -220 | V | Absolute maximum rating at TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | -200 | V | Absolute maximum rating at TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | -7 | V | Absolute maximum rating at TA = +25°C | 2 | ||
| Continuous Collector Current | IC | -2 | A | Absolute maximum rating at TA = +25°C | 2 | ||
| Peak Pulse Current | ICM | -5 | A | Absolute maximum rating at TA = +25°C | 2 | ||
| Base Current | IB | -1 | A | Absolute maximum rating at TA = +25°C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC class 3A (JESD22-A114) | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC class C (JESD22-A115) | 2 | ||
| Power Dissipation | PD | 1.25 | W | Note 5: 15mm x 15mm 1oz Cu, single-sided 1.6mm FR4, still air | 2 | ||
| Power Dissipation | PD | 1.65 | W | Note 6: 25mm x 25mm 1oz Cu, still air | 2 | ||
| Power Dissipation | PD | 3 | W | Note 7: 50mm x 50mm 2oz Cu, still air | 2 | ||
| Power Dissipation | PD | 5.8 | W | Note 8: 50mm x 50mm 2oz Cu, t<5 seconds | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 100 | °C/W | Note 5: 15mm x 15mm 1oz Cu, single-sided 1.6mm FR4, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 76 | °C/W | Note 6: 25mm x 25mm 1oz Cu, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 41.6 | °C/W | Note 7: 50mm x 50mm 2oz Cu, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 21.5 | °C/W | Note 8: 50mm x 50mm 2oz Cu, t<5 seconds | 2 | ||
| Thermal Resistance, Junction to Lead | RJL | 10.5 | °C/W | Note 9: junction to solder point at end of collector lead | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
ZXTP03200BGTA - Footprint:
Package_TO_SOT_SMD:SOT-223 - 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files:
zxtp03200bgta-etched.step/zxtp03200bgta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtp03200bgta.step/zxtp03200bgta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
2f667e22d7eff614, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXTP03200BGTA
**Diodes Incorporated** · Bipolar (BJT) · SOT-223-4
ZXTP03200BGTA from Diodes Incorporated, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet pin-out shows it as the bottom lead, with VEBO limited to -7V and IB to -1A. |
| 2 | C | passive | Collector of the PNP transistor, rated VCEO -200V, VCBO -220V, IC -2A continuous and ICM -5A peak. |
| 3 | E | passive | Emitter of the PNP transistor, the top lead in the datasheet pin-out. |
| 4 | C | passive | Collector tab, which is the large heatsink tab on the opposite side from the leads and is electrically the same as the collector lead; thermal resistance is specified with copper on the collector lead. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-223-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BVCER) | BVCER | -220 | -245 | | V | IC = -1µA, RB ≤ 1kΩ | 4 |
| Collector-Base Breakdown Voltage | BVCBO | -220 | -245 | | V | IC = -100µA | 4 |
| Collector-Emitter Breakdown Voltage (BVCEO) | BVCEO | -200 | -225 | | V | IC = -10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | -8.4 | | V | IE = -100µA | 4 |
| DC Current Transfer Static Ratio | hFE | 100 | 195 | | | IC = -10mA, VCE = -5V | 4 |
| DC Current Transfer Static Ratio | hFE | 100 | 170 | 300 | | IC = -1A, VCE = -5V | 4 |
| DC Current Transfer Static Ratio | hFE | 20 | 50 | | | IC = -2A, VCE = -5V | 4 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Collector Cut-Off Current | ICBO | | | -50 | nA | VCB = -200V | 4 |
| Collector Cut-Off Current | ICBO | | | -0.5 | µA | VCB = -200V, TA = +100°C | 4 |
| Emitter Cut-Off Current | IEBO | | | -10 | nA | VEB = -6V | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -37 | -50 | mV | IC = -0.1A, IB = -10mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -130 | -155 | mV | IC = -0.5A, IB = -25mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -135 | -160 | mV | IC = -1A, IB = -100mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -180 | -275 | mV | IC = -2A, IB = -400mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) | | -955 | -1100 | mV | IC = -2A, IB = -400mA | 4 |
| Base-Emitter Turn-On Voltage | VBE(on) | | -860 | -1000 | mV | IC = -2A, VCE = -5V | 4 |
| Collector-Base Voltage | VCBO | | | -220 | V | Absolute maximum rating at TA = +25°C | 2 |
| Collector-Emitter Voltage | VCEO | | | -200 | V | Absolute maximum rating at TA = +25°C | 2 |
| Emitter-Base Voltage | VEBO | | | -7 | V | Absolute maximum rating at TA = +25°C | 2 |
| Continuous Collector Current | IC | | | -2 | A | Absolute maximum rating at TA = +25°C | 2 |
| Peak Pulse Current | ICM | | | -5 | A | Absolute maximum rating at TA = +25°C | 2 |
| Base Current | IB | | | -1 | A | Absolute maximum rating at TA = +25°C | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM | | | 4000 | V | JEDEC class 3A (JESD22-A114) | 2 |
| Electrostatic Discharge - Machine Model | ESD MM | | | 400 | V | JEDEC class C (JESD22-A115) | 2 |
| Power Dissipation | PD | | | 1.25 | W | Note 5: 15mm x 15mm 1oz Cu, single-sided 1.6mm FR4, still air | 2 |
| Power Dissipation | PD | | | 1.65 | W | Note 6: 25mm x 25mm 1oz Cu, still air | 2 |
| Power Dissipation | PD | | | 3 | W | Note 7: 50mm x 50mm 2oz Cu, still air | 2 |
| Power Dissipation | PD | | | 5.8 | W | Note 8: 50mm x 50mm 2oz Cu, t<5 seconds | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | | 100 | °C/W | Note 5: 15mm x 15mm 1oz Cu, single-sided 1.6mm FR4, still air | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | | 76 | °C/W | Note 6: 25mm x 25mm 1oz Cu, still air | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | | 41.6 | °C/W | Note 7: 50mm x 50mm 2oz Cu, still air | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | | 21.5 | °C/W | Note 8: 50mm x 50mm 2oz Cu, t<5 seconds | 2 |
| Thermal Resistance, Junction to Lead | RJL | | | 10.5 | °C/W | Note 9: junction to solder point at end of collector lead | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `ZXTP03200BGTA`
- Footprint: `Package_TO_SOT_SMD:SOT-223`
- 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files: `zxtp03200bgta-etched.step` / `zxtp03200bgta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtp03200bgta.step` / `zxtp03200bgta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912301701271552) (7 pp, sha256 `2f667e22d7eff614`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxtp03200bgta-datasheet.pdf)