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Ray Publish 0.1.0 689a254 7d ago

ZXTP03200BGTA

Diodes Incorporated · Bipolar (BJT) · SOT-223-4

ZXTP03200BGTA from Diodes Incorporated, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet pin-out shows it as the bottom lead, with VEBO limited to -7V and IB to -1A.
2 C passive Collector of the PNP transistor, rated VCEO -200V, VCBO -220V, IC -2A continuous and ICM -5A peak.
3 E passive Emitter of the PNP transistor, the top lead in the datasheet pin-out.
4 C passive Collector tab, which is the large heatsink tab on the opposite side from the leads and is electrically the same as the collector lead; thermal resistance is specified with copper on the collector lead.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-223-4
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (BVCER) BVCER -220 -245 V IC = -1µA, RB ≤ 1kΩ 4
Collector-Base Breakdown Voltage BVCBO -220 -245 V IC = -100µA 4
Collector-Emitter Breakdown Voltage (BVCEO) BVCEO -200 -225 V IC = -10mA 4
Emitter-Base Breakdown Voltage BVEBO -7 -8.4 V IE = -100µA 4
DC Current Transfer Static Ratio hFE 100 195 IC = -10mA, VCE = -5V 4
DC Current Transfer Static Ratio hFE 100 170 300 IC = -1A, VCE = -5V 4
DC Current Transfer Static Ratio hFE 20 50 IC = -2A, VCE = -5V 4
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector Cut-Off Current ICBO -50 nA VCB = -200V 4
Collector Cut-Off Current ICBO -0.5 µA VCB = -200V, TA = +100°C 4
Emitter Cut-Off Current IEBO -10 nA VEB = -6V 4
Collector-Emitter Saturation Voltage VCE(sat) -37 -50 mV IC = -0.1A, IB = -10mA 4
Collector-Emitter Saturation Voltage VCE(sat) -130 -155 mV IC = -0.5A, IB = -25mA 4
Collector-Emitter Saturation Voltage VCE(sat) -135 -160 mV IC = -1A, IB = -100mA 4
Collector-Emitter Saturation Voltage VCE(sat) -180 -275 mV IC = -2A, IB = -400mA 4
Base-Emitter Saturation Voltage VBE(sat) -955 -1100 mV IC = -2A, IB = -400mA 4
Base-Emitter Turn-On Voltage VBE(on) -860 -1000 mV IC = -2A, VCE = -5V 4
Collector-Base Voltage VCBO -220 V Absolute maximum rating at TA = +25°C 2
Collector-Emitter Voltage VCEO -200 V Absolute maximum rating at TA = +25°C 2
Emitter-Base Voltage VEBO -7 V Absolute maximum rating at TA = +25°C 2
Continuous Collector Current IC -2 A Absolute maximum rating at TA = +25°C 2
Peak Pulse Current ICM -5 A Absolute maximum rating at TA = +25°C 2
Base Current IB -1 A Absolute maximum rating at TA = +25°C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC class 3A (JESD22-A114) 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC class C (JESD22-A115) 2
Power Dissipation PD 1.25 W Note 5: 15mm x 15mm 1oz Cu, single-sided 1.6mm FR4, still air 2
Power Dissipation PD 1.65 W Note 6: 25mm x 25mm 1oz Cu, still air 2
Power Dissipation PD 3 W Note 7: 50mm x 50mm 2oz Cu, still air 2
Power Dissipation PD 5.8 W Note 8: 50mm x 50mm 2oz Cu, t<5 seconds 2
Thermal Resistance, Junction to Ambient RJA 100 °C/W Note 5: 15mm x 15mm 1oz Cu, single-sided 1.6mm FR4, still air 2
Thermal Resistance, Junction to Ambient RJA 76 °C/W Note 6: 25mm x 25mm 1oz Cu, still air 2
Thermal Resistance, Junction to Ambient RJA 41.6 °C/W Note 7: 50mm x 50mm 2oz Cu, still air 2
Thermal Resistance, Junction to Ambient RJA 21.5 °C/W Note 8: 50mm x 50mm 2oz Cu, t<5 seconds 2
Thermal Resistance, Junction to Lead RJL 10.5 °C/W Note 9: junction to solder point at end of collector lead 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTP03200BGTA
  • Footprint: Package_TO_SOT_SMD:SOT-223
  • 3D model: SOT-223-4 (KiCad packages3D, STEP)
  • 3D model files: zxtp03200bgta-etched.step / zxtp03200bgta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtp03200bgta.step / zxtp03200bgta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 2f667e22d7eff614, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF