Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

ZXTN26070CV-7

Diodes Incorporated · Bipolar (BJT) · SOT-563

ZXTN26070CV-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector, tied internally with pins 2, 5 and 6; the datasheet rates VCEO at 70V and continuous IC at 2A.
2 C passive Collector, tied internally with pins 1, 5 and 6; the datasheet rates VCBO at 150V and peak pulse ICM at 5A.
3 B passive Base; the datasheet rates VEBO at 7V and base current IB at 500mA.
4 E passive Emitter of the NPN transistor, as shown in the device schematic.
5 C passive Collector, tied internally with pins 1, 2 and 6; the datasheet gives VCE(sat) below 30mV at IC=100mA.
6 C passive Collector, tied internally with pins 1, 2 and 5; the datasheet rates total power dissipation at 0.6W to 1W depending on the PCB mounting.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 150 190 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 70 80 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.3 V IE = 100µA 4
Collector-Base Cut Off Current ICBO 100 nA VCB = 60V , VCES = 60V 4
Collector-Emitter Cut Off Current ICES 100 nA VCB = 60V , VCES = 60V 4
Emitter Cut Off Current IEBO 100 nA VEB = 5.6V 4
DC Current Gain hFE 190 320 IC = 10mA, VCE = 5V 4
DC Current Gain hFE 200 340 IC = 100mA, VCE = 5V 4
DC Current Gain hFE 75 110 IC = 2A, VCE = 5V 4
Collector-Emitter Saturation Voltage VCE(sat) 22 30 mV IC = 0.1A, IB = 10mA 4
Collector-Emitter Saturation Voltage VCE(sat) 110 150 mV IC = 0.5A, IB = 10mA 4
Collector-Emitter Saturation Voltage VCE(sat) 147 200 mV IC = 1A, IB = 50mA 4
Collector-Emitter Saturation Voltage VCE(sat) 135 165 mV IC = 1A, IB = 100mA 4
Collector-Emitter Saturation Voltage VCE(sat) 265 330 mV IC = 2A, IB = 200mA 4
Base-Emitter Turn-On Voltage VBE(on) 0.85 1 V IC = 1A, VCE = 2V 4
Base-Emitter Saturation Voltage VBE(sat) 0.9 1.1 V IC = 1A, IB = 50mA 4
Collector-Base Voltage VCBO 150 V 2
Collector-Emitter Voltage VCEO 70 V 2
Emitter-Base Voltage VEBO 7 V 2
Continuous Collector Current IC 2 A 2
Peak Pulse Collector Current ICM 5 A single pulse 2
Base Current IB 500 mA 2
Total Power Dissipation PD 0.6 W Note 5: surface mounted, minimum recommended pad layout, still air 2
Total Power Dissipation PD 1 W Note 6: mounted on 25mm x 25mm x 1.6mm FR4 PCB, high coverage single sided 2 oz copper, still air 2
Thermal Resistance, Junction to Ambient RθJA 208 °C/W Note 5: surface mounted, minimum recommended pad layout, still air 2
Thermal Resistance, Junction to Ambient RθJA 121 °C/W Note 6: mounted on 25mm x 25mm x 1.6mm FR4 PCB, high coverage single sided 2 oz copper, still air 2
Thermal Resistance, Junction to Lead RθJL 37 °C/W Note 7: junction to solder-point at end of collector lead 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTN26070CV-7
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: zxtn26070cv-7-etched.step / zxtn26070cv-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn26070cv-7.step / zxtn26070cv-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 242a53cb00bd6f0e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF