# ZXTN23015CFHTA

**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-23

ZXTN23015CFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; drives the NPN transistor, with VEBO limited to 7.0 V and IB to 1.2 A absolute maximum. |
| 2 | E | passive | Emitter; V(BR)EBO is 7.0 V minimum, and continuous collector current is 6 A. |
| 3 | C | passive | Collector; VCEO is 15 V, V(BR)CEX and VCBO are 60 V, continuous current is 6 A and peak pulse current is 12 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO |  |  | 60 | V |  | 2 |
| Collector-emitter voltage | V(BR)CEX |  |  | 60 | V |  | 2 |
| Collector-emitter voltage | VCEO |  |  | 15 | V |  | 2 |
| Emitter-base voltage | VEBO |  |  | 7 | V |  | 2 |
| Peak pulse current | ICM |  |  | 12 | A |  | 2 |
| Continuous collector current | IC |  |  | 6 | A | (c) 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air | 2 |
| Base current | IB |  |  | 1.2 | A |  | 2 |
| Power dissipation (a) | PD |  |  | 0.73 | W | TA=25°C, 15mm x 15mm FR4 1oz Cu; derating 5.84 mW/°C | 2 |
| Power dissipation (b) | PD |  |  | 1.05 | W | TA=25°C, 25mm x 25mm FR4 2oz Cu; derating 8.4 mW/°C | 2 |
| Power dissipation (c) | PD |  |  | 1.25 | W | TA=25°C, 50mm x 50mm FR4 2oz Cu; derating 9.6 mW/°C | 2 |
| Power dissipation (d) | PD |  |  | 1.81 | W | TA=25°C, as (c) at t<5secs; derating 14.5 mW/°C | 2 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 2 |
| Thermal resistance junction to ambient (a) | RθJA |  | 171 |  | °C/W | (a) | 2 |
| Thermal resistance junction to ambient (b) | RθJA |  | 119 |  | °C/W | (b) | 2 |
| Thermal resistance junction to ambient (c) | RθJA |  | 100 |  | °C/W | (c) | 2 |
| Thermal resistance junction to ambient (d) | RθJA |  | 69 |  | °C/W | (d) | 2 |
| Collector-base breakdown voltage | V(BR)CBO | 60 | 85 |  | V | IC=100A | 4 |
| Collector-emitter breakdown voltage | V(BR)CEX | 60 | 85 |  | V | IC =100A, RBE < 1k OR -1V < VBE < 0.25V | 4 |
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | 23 |  | V | IC=10mA (*) | 4 |
| Emitter-base breakdown voltage | V(BR)EBO | 7 | 8.3 |  | V | IE=100A | 4 |
| Collector-emitter cut-off current | ICEX |  |  | 100 | nA | VCE = 48V, RBE < 1k OR -1V < VBE < 0.25V | 4 |
| Collector-base cut-off current | ICBO |  |  | 20 | nA | VCB=48V | 4 |
| Emitter-base cut-off current | IEBO |  |  | 10 | nA | VEB=6V | 4 |
| Static forward current transfer ratio | HFE | 160 | 300 |  |  | IC=10mA, VCE=2V(*) | 4 |
| Static forward current transfer ratio | HFE | 200 | 350 | 560 |  | IC=500mA, VCE=2V(*) | 4 |
| Static forward current transfer ratio | HFE | 190 | 330 |  |  | IC=3A, VCE=2V(*) | 4 |
| Static forward current transfer ratio | HFE | 150 | 280 |  |  | IC=6A, VCE=2V(*) | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 7 | 15 | mV | IC=0.1A, IB=5mA(*) | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 22 | 30 | mV | IC=1A, IB=100mA(*) | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 70 | 90 | mV | IC=3A, IB=60mA(*) | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 130 | 180 | mV | IC=6A, IB=120mA(*) | 4 |
| Base-emitter saturation voltage | VBE(sat) |  | 0.83 | 0.93 | V | IC=3A, IB=60mA(*) | 4 |
| Base-emitter saturation voltage | VBE(sat) |  | 0.89 | 0.98 | V | IC=6A, IB=120mA(*) | 4 |
| Base-emitter turn-on voltage | VBE(on) |  | 0.81 | 0.91 | V | IC=6A, VCE=2V(*) | 4 |
| Transition frequency | fT |  | 235 |  | MHz | Ic=500mA, VCE=2V, f=50MHz | 4 |
| Output capacitance | Cobo |  | 56 |  | pF | VCB=10V, f=1MHz | 4 |
| Delay time | td |  | 15 |  | ns | VCC=5V, IC=3A, IB1=IB2=150mA | 4 |
| Rise time | tr |  | 38.5 |  | ns | VCC=5V, IC=3A, IB1=IB2=150mA | 4 |
| Storage time | tstg |  | 213 |  | ns | VCC=5V, IC=3A, IB1=IB2=150mA | 4 |
| Fall time | tf |  | 19.7 |  | ns | VCC=5V, IC=3A, IB1=IB2=150mA | 4 |

## CAD (KiCad official)

- Symbol: `ZXTN23015CFHTA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `zxtn23015cfhta-etched.step` / `zxtn23015cfhta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtn23015cfhta.step` / `zxtn23015cfhta.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](docs/zxtn23015cfhta-datasheet.pdf) (6 pp, sha256 `8e0c60f830a5c9b6`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zxtn23015cfhta-datasheet.pdf)