component
ZXTN2020FTA
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXTN2020FTA
Diodes Incorporated · Bipolar Transistors - BJT · SOT-23
ZXTN2020FTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 7V and continuous base current IB max 1A. |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base voltage VEBO max 7V. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 100V, VCBO 160V, continuous IC 4A, peak ICM 12A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 160 | V | 2 | |||
| Collector-emitter voltage | V(BR)CEV | 160 | V | 2 | |||
| Collector-emitter voltage | VCEO | 100 | V | 2 | |||
| Emitter-base voltage | VEBO | 7 | V | 2 | |||
| Peak pulse current | ICM | 12 | A | 2 | |||
| Continuous collector current | IC | 4 | A | (a) | 2 | ||
| Base current | IB | 1 | A | 2 | |||
| Power dissipation | PD | 1 | W | TA=25°C (a), derating 8 mW/°C | 2 | ||
| Power dissipation | PD | 1.2 | W | TA=25°C (b), derating 9.6 mW/°C | 2 | ||
| Power dissipation | PD | 1.56 | W | TA=25°C (c), derating 12.5 mW/°C | 2 | ||
| Operating and storage temperature | Tj:Tstg | -55 | 150 | °C | 2 | ||
| Junction to ambient (a) | RθJA | 125 | °C/W | 18mm x 18mm x 1.6mm FR4, 2 oz copper, still air | 2 | ||
| Junction to ambient (b) | RθJA | 104 | °C/W | 30mm x 30mm x 1.6mm FR4, 2 oz copper, still air | 2 | ||
| Junction to ambient (c) | RθJA | 80 | °C/W | as (b), t<5secs | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | 160 | 200 | V | IC=100µA | 4 | |
| Collector-emitter breakdown voltage | V(BR)CEV | 160 | 200 | V | IC=1µA, -1V<VBE<+0.3V | 4 | |
| Collector-emitter breakdown voltage | V(BR)CEO | 100 | 115 | V | IC=10mA (a) | 4 | |
| Collector-emitter cut-off current | ICEV | 1 | 20 | nA | VCES=128V, VBE=-1V | 4 | |
| Collector-base cut-off current | ICBO | 1 | 20 | nA | VCB=128V | 4 | |
| Emitter-base cut-off current | IEBO | 1 | 10 | nA | VEB=6V | 4 | |
| Static forward current transfer ratio | HFE | 100 | 220 | 300 | IC=10mA, VCE=2V(a) | 4 | |
| Static forward current transfer ratio | HFE | 100 | 200 | IC=1A, VCE=2V(a) | 4 | ||
| Static forward current transfer ratio | HFE | 35 | 60 | IC=4A, VCE=2V(a) | 4 | ||
| Static forward current transfer ratio | HFE | 13 | IC=10A, VCE=2V(a) | 4 | |||
| Collector-emitter saturation voltage | VCE(sat) | 20 | 30 | mV | IC=0.1A, IB=5mA(a) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | 40 | 50 | mV | IC=1A, IB=100mA(a) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | 85 | 105 | mV | IC=2A, IB=100mA(a) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | 120 | 150 | mV | IC=4A, IB=400mA(a) | 4 | |
| Base-emitter saturation voltage | VBE(sat) | 0.94 | 1.05 | V | IC=4A, IB=400mA(a) | 4 | |
| Base-emitter turn-on voltage | VBE(on) | 0.84 | 0.94 | V | IC=4A, VCE=2V(a) | 4 | |
| Transition frequency | fT | 130 | MHz | Ic=100mA, VCE=10V, f=50MHz | 4 | ||
| Output capacitance | Cobo | 22 | pF | VCB=10V, f=1MHz | 4 | ||
| Turn-on time | t(on) | 37 | ns | VCC=10V, IC=1A, IB1=IB2=100mA | 4 | ||
| Turn-off time | t(off) | 910 | ns | VCC=10V, IC=1A, IB1=IB2=100mA | 4 |
CAD (KiCad official)
- Symbol:
ZXTN2020FTA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
zxtn2020fta-etched.step/zxtn2020fta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtn2020fta.step/zxtn2020fta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
d7e430e7bbc7b660, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXTN2020FTA
**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-23
ZXTN2020FTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 7V and continuous base current IB max 1A. |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base voltage VEBO max 7V. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 100V, VCBO 160V, continuous IC 4A, peak ICM 12A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 160 | V | | 2 |
| Collector-emitter voltage | V(BR)CEV | | | 160 | V | | 2 |
| Collector-emitter voltage | VCEO | | | 100 | V | | 2 |
| Emitter-base voltage | VEBO | | | 7 | V | | 2 |
| Peak pulse current | ICM | | | 12 | A | | 2 |
| Continuous collector current | IC | | | 4 | A | (a) | 2 |
| Base current | IB | | | 1 | A | | 2 |
| Power dissipation | PD | | | 1 | W | TA=25°C (a), derating 8 mW/°C | 2 |
| Power dissipation | PD | | | 1.2 | W | TA=25°C (b), derating 9.6 mW/°C | 2 |
| Power dissipation | PD | | | 1.56 | W | TA=25°C (c), derating 12.5 mW/°C | 2 |
| Operating and storage temperature | Tj:Tstg | -55 | | 150 | °C | | 2 |
| Junction to ambient (a) | RθJA | | | 125 | °C/W | 18mm x 18mm x 1.6mm FR4, 2 oz copper, still air | 2 |
| Junction to ambient (b) | RθJA | | | 104 | °C/W | 30mm x 30mm x 1.6mm FR4, 2 oz copper, still air | 2 |
| Junction to ambient (c) | RθJA | | | 80 | °C/W | as (b), t<5secs | 2 |
| Collector-base breakdown voltage | V(BR)CBO | 160 | 200 | | V | IC=100µA | 4 |
| Collector-emitter breakdown voltage | V(BR)CEV | 160 | 200 | | V | IC=1µA, -1V<VBE<+0.3V | 4 |
| Collector-emitter breakdown voltage | V(BR)CEO | 100 | 115 | | V | IC=10mA (a) | 4 |
| Collector-emitter cut-off current | ICEV | | 1 | 20 | nA | VCES=128V, VBE=-1V | 4 |
| Collector-base cut-off current | ICBO | | 1 | 20 | nA | VCB=128V | 4 |
| Emitter-base cut-off current | IEBO | | 1 | 10 | nA | VEB=6V | 4 |
| Static forward current transfer ratio | HFE | 100 | 220 | 300 | | IC=10mA, VCE=2V(a) | 4 |
| Static forward current transfer ratio | HFE | 100 | 200 | | | IC=1A, VCE=2V(a) | 4 |
| Static forward current transfer ratio | HFE | 35 | 60 | | | IC=4A, VCE=2V(a) | 4 |
| Static forward current transfer ratio | HFE | | 13 | | | IC=10A, VCE=2V(a) | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | 20 | 30 | mV | IC=0.1A, IB=5mA(a) | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | 40 | 50 | mV | IC=1A, IB=100mA(a) | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | 85 | 105 | mV | IC=2A, IB=100mA(a) | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | 120 | 150 | mV | IC=4A, IB=400mA(a) | 4 |
| Base-emitter saturation voltage | VBE(sat) | | 0.94 | 1.05 | V | IC=4A, IB=400mA(a) | 4 |
| Base-emitter turn-on voltage | VBE(on) | | 0.84 | 0.94 | V | IC=4A, VCE=2V(a) | 4 |
| Transition frequency | fT | 130 | | | MHz | Ic=100mA, VCE=10V, f=50MHz | 4 |
| Output capacitance | Cobo | | 22 | | pF | VCB=10V, f=1MHz | 4 |
| Turn-on time | t(on) | | 37 | | ns | VCC=10V, IC=1A, IB1=IB2=100mA | 4 |
| Turn-off time | t(off) | | 910 | | ns | VCC=10V, IC=1A, IB1=IB2=100mA | 4 |
## CAD (KiCad official)
- Symbol: `ZXTN2020FTA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `zxtn2020fta-etched.step` / `zxtn2020fta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtn2020fta.step` / `zxtn2020fta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](docs/zxtn2020fta-datasheet.pdf) (6 pp, sha256 `d7e430e7bbc7b660`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxtn2020fta-datasheet.pdf)