component
ZXTN2018FQTA
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownZXTN2018FQTA
Diodes Incorporated · Bipolar Transistors - BJT · SOT-23
ZXTN2018FQTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor, drive current limited by IB maximum of 1A. |
| 2 | E | passive | Emitter of the NPN transistor, with VEBO rated at 7V maximum. |
| 3 | C | passive | Collector of the NPN transistor, rated 60V VCEO, 140V VCBO and 5A continuous (12A peak) collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 140 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEV | 140 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 60 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 7 | V | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 5 | A | TA = +25°C | 2 | ||
| Base Current | IB | 1 | A | TA = +25°C | 2 | ||
| Peak Pulse Current | ICM | 12 | A | TA = +25°C | 2 | ||
| Power Dissipation (Note 6) | PD | 1 | W | Note 6: collector lead on 18mm x 18mm 2oz copper, still air | 2 | ||
| Power Dissipation (Note 7) | PD | 1.2 | W | Note 7: 30mm x 30mm 2oz copper | 2 | ||
| Power Dissipation (Note 8) | PD | 1.56 | W | Note 8: as note 6, t < 5 seconds | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 125 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | 104 | °C/W | Note 7 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 8) | RθJA | 80 | °C/W | Note 8 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| ESD Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| ESD Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | 140 | 180 | V | IC = 100µA | 4 | |
| Collector-Emitter Breakdown Voltage | BVCEV | 140 | 180 | V | IC = 1µA, -1V < VBE < +0.3V | 4 | |
| Collector-Emitter Breakdown Voltage | BVCEO | 60 | 80 | V | IC = 10mA | 4 | |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | 8 | V | IE = 100µA | 4 | |
| Collector-Base Cutoff Current | ICBO | 50 | nA | VCB = 110V | 4 | ||
| Collector-Emitter Cutoff Current | ICEV | 100 | nA | VCB = 110V, VBE = -1V | 4 | ||
| Emitter-Base Cutoff Current | IEBO | 10 | nA | VEB = 6V | 4 | ||
| Static Forward Current Transfer Ratio | hFE | 100 | 220 | IC = 10mA, VCE = 1V | 4 | ||
| Static Forward Current Transfer Ratio | hFE | 100 | 200 | 300 | IC = 2A, VCE = 1V | 4 | |
| Static Forward Current Transfer Ratio | hFE | 40 | 65 | IC = 5A, VCE = 1V | 4 | ||
| Static Forward Current Transfer Ratio | hFE | 15 | 25 | IC = 10A, VCE = 1V | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 15 | 30 | mV | IC = 0.1A, IB = 5mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 35 | 45 | mV | IC = 1A, IB = 100mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 40 | 55 | mV | IC = 1A, IB = 50mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 85 | 110 | mV | IC = 2A, IB = 50mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 145 | 170 | mV | IC = 5A, IB = 250mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 170 | 210 | mV | IC = 6A, IB = 300mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.92 | 1 | V | IC = 5A, IB = 250mA | 4 | |
| Base-Emitter Turn-On Voltage | VBE(ON) | 0.85 | 0.95 | V | IC = 5A, VCE = 1V | 4 | |
| Output Capacitance | COBO | 28 | pF | VCB = 10V, f = 1MHz | 4 | ||
| Transition Frequency | fT | 130 | MHz | VCE = 10V, IC = 100mA, f = 50MHz | 4 | ||
| Turn-On Time | tON | 33 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA | 4 | ||
| Turn-Off Time | tOFF | 668 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
ZXTN2018FQTA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
zxtn2018fqta-etched.step/zxtn2018fqta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtn2018fqta.step/zxtn2018fqta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
3a67e98285d01c0c, retrieved 2026-10-24, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).