component
ZXTN19100CZTA
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXTN19100CZTA
Diodes Incorporated · Bipolar (BJT) · SOT-89
ZXTN19100CZTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet pin-out shows it as the bottom lead in top view, with VEBO max 7 V and IB max 1 A. |
| 2 | C | passive | Collector lead, in the middle of the three leads and tied to the collector tab; VCEO 100 V, IC 5.25 A continuous, ICM 10 A peak. |
| 3 | E | passive | Emitter of the NPN transistor; the datasheet pin-out shows it as the top lead in top view. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 200 | V | 2 | |||
| Collector-Emitter Voltage (forward blocking) | VCEX | 200 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | 100 | V | 2 | |||
| Emitter-Collector voltage (reverse blocking) | VECX | 6 | V | 2 | |||
| Emitter-Base Voltage | VEBO | 7 | V | 2 | |||
| Continuous Collector Current | IC | 5.25 | A | Note 5 | 2 | ||
| Base current | IB | 1 | A | 2 | |||
| Peak Pulse Collector Current | ICM | 10 | A | Single pulse | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Power Dissipation (Note 5) | PD | 1.1 | W | Note 5: 15mm x 15mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 | ||
| Power Dissipation (Note 6) | PD | 1.8 | W | Note 6: 25mm x 25mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 | ||
| Power Dissipation (Note 7) | PD | 2.4 | W | Note 7: 50mm x 50mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 | ||
| Power Dissipation (Note 8) | PD | 4.46 | W | Note 8: Note 5 board, t<5 seconds | 2 | ||
| Power Dissipation (Note 9) | PD | 26.6 | W | Note 9: junction to case (collector tab), typical | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 117 | °C/W | Note 5: 15mm x 15mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 68 | °C/W | Note 6: 25mm x 25mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | 51 | °C/W | Note 7: 50mm x 50mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 8) | RθJA | 28 | °C/W | Note 8: Note 5 board, t<5 seconds | 2 | ||
| Thermal Resistance, Junction to Case (Note 9) | RθJC | 4.69 | °C/W | Note 9: junction to case (collector tab), typical | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | 200 | 240 | V | IC = 100μA | 5 | |
| Collector-Emitter breakdown voltage (forward blocking) | BVCEX | 200 | 240 | V | IC = 100µA, RBE ≤ 1kΩ or -1V < VBE < 0.25V | 5 | |
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | 120 | V | IC = 10mA | 5 | |
| Emitter-Collector breakdown voltage (reverse blocking) | BVECX | 6 | 8.3 | V | IE = 100μA, RBC ≤ 1kΩ or 0.25V > VBC > -0.25V | 5 | |
| Emitter-Collector breakdown voltage (reverse blocking) | BVECO | 5 | 8 | V | IE = 100µA | 5 | |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | 8.3 | V | IE = 100µA | 5 | |
| Collector Base Cutoff Current | ICBO | 1 | 50 | nA | VCB = 200V | 5 | |
| Collector Base Cutoff Current | ICBO | 0.5 | µA | VCB = 200V, TA = +100°C | 5 | ||
| Collector Emitter Cutoff Current | ICEX | 100 | nA | VCE = 200V, RBE ≤ 1kΩ or -1V < VBE < 0.25V | 5 | ||
| Emitter Cutoff Current | IEBO | 1 | 50 | nA | VEB = 5.6V | 5 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 50 | 65 | mV | IC = 1A, IB = 100mA | 5 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 105 | 140 | mV | IC = 1A, IB = 20mA | 5 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 210 | 350 | mV | IC = 5.25A, IB = 525mA | 5 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1000 | 1075 | mV | IC = 5.25A, IB = 525mA | 5 | |
| Base-Emitter Turn-On Voltage | VBE(on) | 930 | 1025 | mV | IC = 5.25A, VCE = 2V | 5 | |
| DC current gain | hFE | 200 | IC = 100mA, VCE = 2V | 5 | |||
| DC current gain | hFE | 130 | IC = 1A, VCE = 2V | 5 | |||
| DC current gain | hFE | 30 | IC = 5.25A, VCE = 2V | 5 | |||
| Input Capacitance | Cibo | 305 | 400 | pF | VEB = 0.5V, f = 1MHz | 5 | |
| Output Capacitance | Cobo | 15.7 | 25 | pF | VCB = 10V, f = 1MHz | 5 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
ZXTN19100CZTA - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
zxtn19100czta-etched.step/zxtn19100czta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtn19100czta.step/zxtn19100czta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
4c4927ab5df09dda, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXTN19100CZTA
**Diodes Incorporated** · Bipolar (BJT) · SOT-89
ZXTN19100CZTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet pin-out shows it as the bottom lead in top view, with VEBO max 7 V and IB max 1 A. |
| 2 | C | passive | Collector lead, in the middle of the three leads and tied to the collector tab; VCEO 100 V, IC 5.25 A continuous, ICM 10 A peak. |
| 3 | E | passive | Emitter of the NPN transistor; the datasheet pin-out shows it as the top lead in top view. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | 200 | V | | 2 |
| Collector-Emitter Voltage (forward blocking) | VCEX | | | 200 | V | | 2 |
| Collector-Emitter Voltage | VCEO | | | 100 | V | | 2 |
| Emitter-Collector voltage (reverse blocking) | VECX | | | 6 | V | | 2 |
| Emitter-Base Voltage | VEBO | | | 7 | V | | 2 |
| Continuous Collector Current | IC | | | 5.25 | A | Note 5 | 2 |
| Base current | IB | | | 1 | A | | 2 |
| Peak Pulse Collector Current | ICM | | | 10 | A | Single pulse | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Power Dissipation (Note 5) | PD | | | 1.1 | W | Note 5: 15mm x 15mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 |
| Power Dissipation (Note 6) | PD | | | 1.8 | W | Note 6: 25mm x 25mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 |
| Power Dissipation (Note 7) | PD | | | 2.4 | W | Note 7: 50mm x 50mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 |
| Power Dissipation (Note 8) | PD | | | 4.46 | W | Note 8: Note 5 board, t<5 seconds | 2 |
| Power Dissipation (Note 9) | PD | | | 26.6 | W | Note 9: junction to case (collector tab), typical | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | | | 117 | °C/W | Note 5: 15mm x 15mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | | | 68 | °C/W | Note 6: 25mm x 25mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | | | 51 | °C/W | Note 7: 50mm x 50mm x 0.6mm FR4, 1oz Cu, still air, steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 8) | RθJA | | | 28 | °C/W | Note 8: Note 5 board, t<5 seconds | 2 |
| Thermal Resistance, Junction to Case (Note 9) | RθJC | | | 4.69 | °C/W | Note 9: junction to case (collector tab), typical | 2 |
| Collector-Base Breakdown Voltage | BVCBO | 200 | 240 | | V | IC = 100μA | 5 |
| Collector-Emitter breakdown voltage (forward blocking) | BVCEX | 200 | 240 | | V | IC = 100µA, RBE ≤ 1kΩ or -1V < VBE < 0.25V | 5 |
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | 120 | | V | IC = 10mA | 5 |
| Emitter-Collector breakdown voltage (reverse blocking) | BVECX | 6 | 8.3 | | V | IE = 100μA, RBC ≤ 1kΩ or 0.25V > VBC > -0.25V | 5 |
| Emitter-Collector breakdown voltage (reverse blocking) | BVECO | 5 | 8 | | V | IE = 100µA | 5 |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | 8.3 | | V | IE = 100µA | 5 |
| Collector Base Cutoff Current | ICBO | | 1 | 50 | nA | VCB = 200V | 5 |
| Collector Base Cutoff Current | ICBO | | | 0.5 | µA | VCB = 200V, TA = +100°C | 5 |
| Collector Emitter Cutoff Current | ICEX | | | 100 | nA | VCE = 200V, RBE ≤ 1kΩ or -1V < VBE < 0.25V | 5 |
| Emitter Cutoff Current | IEBO | | 1 | 50 | nA | VEB = 5.6V | 5 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | 50 | 65 | mV | IC = 1A, IB = 100mA | 5 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | 105 | 140 | mV | IC = 1A, IB = 20mA | 5 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | 210 | 350 | mV | IC = 5.25A, IB = 525mA | 5 |
| Base-Emitter Saturation Voltage | VBE(sat) | | 1000 | 1075 | mV | IC = 5.25A, IB = 525mA | 5 |
| Base-Emitter Turn-On Voltage | VBE(on) | | 930 | 1025 | mV | IC = 5.25A, VCE = 2V | 5 |
| DC current gain | hFE | 200 | | | | IC = 100mA, VCE = 2V | 5 |
| DC current gain | hFE | 130 | | | | IC = 1A, VCE = 2V | 5 |
| DC current gain | hFE | 30 | | | | IC = 5.25A, VCE = 2V | 5 |
| Input Capacitance | Cibo | | 305 | 400 | pF | VEB = 0.5V, f = 1MHz | 5 |
| Output Capacitance | Cobo | | 15.7 | 25 | pF | VCB = 10V, f = 1MHz | 5 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | • Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `ZXTN19100CZTA`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `zxtn19100czta-etched.step` / `zxtn19100czta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtn19100czta.step` / `zxtn19100czta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911579430080512) (8 pp, sha256 `4c4927ab5df09dda`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxtn19100czta-datasheet.pdf)