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ZXTN07045EFFTA

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXTN07045EFFTA

Diodes Incorporated · Bipolar (BJT) · SOT-23F

ZXTN07045EFFTA from Diodes Incorporated, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO is 7V max and base current IB is 1A max.
2 E passive Emitter of the NPN transistor; VECO reverse blocking is 6V max.
3 C passive Collector of the NPN transistor (exposed collector pad, single lead on one side); VCEO is 45V, VCBO is 45V, and IC is 4A continuous (6A peak).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 45 V 2
Collector-Emitter Voltage VCEO 45 V 2
Emitter-Collector Voltage (Reverse Blocking) VECO 6 V 2
Emitter-Base Voltage VEBO 7 V 2
Continuous Collector Current IC 4 A 2
Peak Pulse Current ICM 6 A 2
Base Current IB 1 A 2
Power Dissipation (Note 5) PD 0.84 W Note 5: 15mm x 15mm 1oz Cu FR4, still air 2
Power Dissipation (Note 6) PD 1.34 W Note 6: 25mm x 25mm 2oz Cu 2
Power Dissipation (Note 7) PD 1.5 W Note 7: 50mm x 50mm 2oz Cu 2
Power Dissipation (Note 8) PD 2 W Note 8: Note 7 condition, t < 5 seconds 2
Linear Derating Factor (Note 5) PD 6.72 mW/C Note 5: 15mm x 15mm 1oz Cu FR4, still air 2
Linear Derating Factor (Note 6) PD 10.72 mW/C Note 6: 25mm x 25mm 2oz Cu 2
Linear Derating Factor (Note 7) PD 12 mW/C Note 7: 50mm x 50mm 2oz Cu 2
Linear Derating Factor (Note 8) PD 16 mW/C Note 8: Note 7 condition, t < 5 seconds 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 149 C/W Note 5: 15mm x 15mm 1oz Cu FR4, still air 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 93 C/W Note 6: 25mm x 25mm 2oz Cu 2
Thermal Resistance, Junction to Ambient (Note 7) RθJA 83 C/W Note 7: 50mm x 50mm 2oz Cu 2
Thermal Resistance, Junction to Ambient (Note 8) RθJA 60 C/W Note 8: Note 7 condition, t < 5 seconds 2
Thermal Resistance, Junction to Lead (Note 9) RθJL 43.77 C/W Note 9: junction to solder point at end of collector lead 2
Operating and Storage Temperature Range TJ, TSTG -55 150 C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2
Collector-Base Breakdown Voltage BVCBO 45 160 V IC = 100µA 4
Collector-Emitter Breakdown Voltage (Base Open) BVCEO 45 60 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.3 V IE = 100µA 4
Emitter-Collector Breakdown Voltage (Reverse Blocking) BVECX 6 8.2 V IE = 100µA; RBC < 1kΩ or -0.25V < VBC < 0.25V 4
Emitter-Collector Breakdown Voltage (Base Open) BVECO 6 7.2 V IE = 100µA 4
Collector-Base Cut-Off Current ICBO 50 nA VCB = 35V 4
Collector-Base Cut-Off Current (TA = +100°C) ICBO 20 µA VCB = 35V, TA = +100°C 4
Emitter-Base Cut-Off Current IEBO 50 nA VEB = 5.6V 4
Static Forward Current Transfer Ratio hFE 500 800 1500 IC = 100mA, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 400 710 IC = 1A, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 250 530 IC = 2A, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 70 125 IC = 4A, VCE = 2V 4
Collector-Emitter Saturation Voltage VCE(sat) 45 70 mV IC = 0.1A, IB = 0.5mA 4
Collector-Emitter Saturation Voltage VCE(sat) 160 230 mV IC = 1A, IB = 5mA 4
Collector-Emitter Saturation Voltage VCE(sat) 60 80 mV IC = 1A, IB = 100mA 4
Collector-Emitter Saturation Voltage VCE(sat) 200 270 mV IC = 2A, IB = 20mA 4
Collector-Emitter Saturation Voltage VCE(sat) 230 280 mV IC = 4A, IB = 200mA 4
Base-Emitter Saturation Voltage VBE(sat) 1000 1100 mV IC = 4A, IB = 200mA 4
Base-Emitter On Voltage VBE(on) 875 1000 mV IC = 4A, VCE = 2V 4
Transition Frequency fT 150 190 MHz IC = 50mA, VCE = 5V, f = 50MHz 4
Output Capacitance Cobo 18.4 25 pF VCB = 10V, f = 1MHz 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTN07045EFFTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23F (KiCad packages3D, STEP)
  • 3D model files: zxtn07045effta-etched.step / zxtn07045effta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn07045effta.step / zxtn07045effta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 cf5eb83f17db527d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF