component
ZXTD2090E6TA
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXTD2090E6TA
Diodes Incorporated · Bipolar (BJT) · SOT-26
ZXTD2090E6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor Q1 (NPN), pin 1 marked by the dot on the top-view pin-out. |
| 2 | B1 | input | Base of transistor Q1; base current IB is rated 200 mA maximum and VEBO is 7 V. |
| 3 | C2 | passive | Collector of transistor Q2; VCEO is 50 V, continuous IC is 1 A and peak pulse ICM is 2 A. |
| 4 | E2 | passive | Emitter of transistor Q2 (NPN). |
| 5 | B2 | input | Base of transistor Q2; base current IB is rated 200 mA maximum and VEBO is 7 V. |
| 6 | C1 | passive | Collector of transistor Q1; VCEO is 50 V, continuous IC is 1 A and peak pulse ICM is 2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V | @TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 50 | V | @TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 7 | V | @TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 1 | A | @TA = +25°C | 2 | ||
| Peak Pulse Current | ICM | 2 | A | @TA = +25°C | 2 | ||
| Base Current | IB | 200 | mA | @TA = +25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | 50 | V | IC = 100µA | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 50 | V | IC = 10mA | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100µA | 4 | ||
| Collector-Base Cut-Off Current | ICBO | 10 | nA | VCB = 40V | 4 | ||
| Collector-Emitter Cut-Off Current | ICES | 10 | nA | VCES = 40V | 4 | ||
| Emitter Cut-Off Current | IEBO | 10 | nA | VEB = 5.6V | 4 | ||
| DC Current Gain (min) | hFE | 200 | IC = 10mA, VCE = 2V | 4 | |||
| DC Current Gain (min) | hFE | 300 | IC = 100mA, VCE = 2V | 4 | |||
| DC Current Gain (min) | hFE | 75 | IC = 1A, VCE = 2V | 4 | |||
| DC Current Gain (min) | hFE | 20 | IC = 1.5A, VCE = 2V | 4 | |||
| DC Current Gain (max) | hFE | 420 | IC = 10mA, VCE = 2V | 4 | |||
| DC Current Gain (max) | hFE | 450 | IC = 100mA, VCE = 2V | 4 | |||
| DC Current Gain (max) | hFE | 350 | IC = 500mA, VCE = 2V | 4 | |||
| DC Current Gain (max) | hFE | 130 | IC = 1A, VCE = 2V | 4 | |||
| DC Current Gain (max) | hFE | 60 | IC = 1.5A, VCE = 2V | 4 | |||
| Collector-Emitter Saturation Voltage (min) | VCE(sat) | 24 | mV | IC = 100mA, IB = 10mA | 4 | ||
| Collector-Emitter Saturation Voltage (min) | VCE(sat) | 60 | mV | IC = 250mA, IB = 10mA | 4 | ||
| Collector-Emitter Saturation Voltage (min) | VCE(sat) | 120 | mV | IC = 500mA, IB = 10mA | 4 | ||
| Collector-Emitter Saturation Voltage (min) | VCE(sat) | 160 | mV | IC = 1A, IB = 50mA | 4 | ||
| Collector-Emitter Saturation Voltage (max) | VCE(sat) | 35 | mV | IC = 100mA, IB = 10mA | 4 | ||
| Collector-Emitter Saturation Voltage (max) | VCE(sat) | 80 | mV | IC = 250mA, IB = 10mA | 4 | ||
| Collector-Emitter Saturation Voltage (max) | VCE(sat) | 200 | mV | IC = 500mA, IB = 10mA | 4 | ||
| Collector-Emitter Saturation Voltage (max) | VCE(sat) | 270 | mV | IC = 1A, IB = 50mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 940 | 1100 | mV | IC = 1A, IB = 50mA | 4 | |
| Base-Emitter Turn-On Voltage | VBE(on) | 850 | 1100 | mV | IC = 1A, VCE = 2V | 4 | |
| Thermal Resistance, Junction to Ambient | RJA | 179 | °C/W | Notes 5 & 9 | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 139 | °C/W | Notes 6 & 9 | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 113 | °C/W | Notes 6 & 10 | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 73 | °C/W | Notes 8 & 9 | 2 | ||
| Thermal Resistance, Junction to Lead | RJL | 95.5 | °C/W | Note 11 | 2 | ||
| Power Dissipation | PD | 0.7 | W | Notes 5 & 9 | 2 | ||
| Power Dissipation | PD | 0.9 | W | Notes 6 & 9 | 2 | ||
| Power Dissipation | PD | 1.1 | W | Notes 6 & 10 | 2 | ||
| Power Dissipation | PD | 1.7 | W | Notes 8 & 9 | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
ZXTD2090E6TA - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
zxtd2090e6ta-etched.step/zxtd2090e6ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtd2090e6ta.step/zxtd2090e6ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
43245e29cb3c1867, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXTD2090E6TA
**Diodes Incorporated** · Bipolar (BJT) · SOT-26
ZXTD2090E6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor Q1 (NPN), pin 1 marked by the dot on the top-view pin-out. |
| 2 | B1 | input | Base of transistor Q1; base current IB is rated 200 mA maximum and VEBO is 7 V. |
| 3 | C2 | passive | Collector of transistor Q2; VCEO is 50 V, continuous IC is 1 A and peak pulse ICM is 2 A. |
| 4 | E2 | passive | Emitter of transistor Q2 (NPN). |
| 5 | B2 | input | Base of transistor Q2; base current IB is rated 200 mA maximum and VEBO is 7 V. |
| 6 | C1 | passive | Collector of transistor Q1; VCEO is 50 V, continuous IC is 1 A and peak pulse ICM is 2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | 50 | V | @TA = +25°C | 2 |
| Collector-Emitter Voltage | VCEO | | | 50 | V | @TA = +25°C | 2 |
| Emitter-Base Voltage | VEBO | | | 7 | V | @TA = +25°C | 2 |
| Continuous Collector Current | IC | | | 1 | A | @TA = +25°C | 2 |
| Peak Pulse Current | ICM | | | 2 | A | @TA = +25°C | 2 |
| Base Current | IB | | | 200 | mA | @TA = +25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Collector-Base Breakdown Voltage | BVCBO | 50 | | | V | IC = 100µA | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | 50 | | | V | IC = 10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | | | V | IE = 100µA | 4 |
| Collector-Base Cut-Off Current | ICBO | | | 10 | nA | VCB = 40V | 4 |
| Collector-Emitter Cut-Off Current | ICES | | | 10 | nA | VCES = 40V | 4 |
| Emitter Cut-Off Current | IEBO | | | 10 | nA | VEB = 5.6V | 4 |
| DC Current Gain (min) | hFE | 200 | | | | IC = 10mA, VCE = 2V | 4 |
| DC Current Gain (min) | hFE | 300 | | | | IC = 100mA, VCE = 2V | 4 |
| DC Current Gain (min) | hFE | 75 | | | | IC = 1A, VCE = 2V | 4 |
| DC Current Gain (min) | hFE | 20 | | | | IC = 1.5A, VCE = 2V | 4 |
| DC Current Gain (max) | hFE | | | 420 | | IC = 10mA, VCE = 2V | 4 |
| DC Current Gain (max) | hFE | | | 450 | | IC = 100mA, VCE = 2V | 4 |
| DC Current Gain (max) | hFE | | | 350 | | IC = 500mA, VCE = 2V | 4 |
| DC Current Gain (max) | hFE | | | 130 | | IC = 1A, VCE = 2V | 4 |
| DC Current Gain (max) | hFE | | | 60 | | IC = 1.5A, VCE = 2V | 4 |
| Collector-Emitter Saturation Voltage (min) | VCE(sat) | 24 | | | mV | IC = 100mA, IB = 10mA | 4 |
| Collector-Emitter Saturation Voltage (min) | VCE(sat) | 60 | | | mV | IC = 250mA, IB = 10mA | 4 |
| Collector-Emitter Saturation Voltage (min) | VCE(sat) | 120 | | | mV | IC = 500mA, IB = 10mA | 4 |
| Collector-Emitter Saturation Voltage (min) | VCE(sat) | 160 | | | mV | IC = 1A, IB = 50mA | 4 |
| Collector-Emitter Saturation Voltage (max) | VCE(sat) | | | 35 | mV | IC = 100mA, IB = 10mA | 4 |
| Collector-Emitter Saturation Voltage (max) | VCE(sat) | | | 80 | mV | IC = 250mA, IB = 10mA | 4 |
| Collector-Emitter Saturation Voltage (max) | VCE(sat) | | | 200 | mV | IC = 500mA, IB = 10mA | 4 |
| Collector-Emitter Saturation Voltage (max) | VCE(sat) | | | 270 | mV | IC = 1A, IB = 50mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) | | 940 | 1100 | mV | IC = 1A, IB = 50mA | 4 |
| Base-Emitter Turn-On Voltage | VBE(on) | | 850 | 1100 | mV | IC = 1A, VCE = 2V | 4 |
| Thermal Resistance, Junction to Ambient | RJA | | 179 | | °C/W | Notes 5 & 9 | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | 139 | | °C/W | Notes 6 & 9 | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | 113 | | °C/W | Notes 6 & 10 | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | 73 | | °C/W | Notes 8 & 9 | 2 |
| Thermal Resistance, Junction to Lead | RJL | | 95.5 | | °C/W | Note 11 | 2 |
| Power Dissipation | PD | | 0.7 | | W | Notes 5 & 9 | 2 |
| Power Dissipation | PD | | 0.9 | | W | Notes 6 & 9 | 2 |
| Power Dissipation | PD | | 1.1 | | W | Notes 6 & 10 | 2 |
| Power Dissipation | PD | | 1.7 | | W | Notes 8 & 9 | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `ZXTD2090E6TA`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files: `zxtd2090e6ta-etched.step` / `zxtd2090e6ta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtd2090e6ta.step` / `zxtd2090e6ta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602725994931232768) (7 pp, sha256 `43245e29cb3c1867`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxtd2090e6ta-datasheet.pdf)