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ZXTC2045E6TA

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXTC2045E6TA

Diodes Incorporated · Bipolar Transistors - BJT · SOT-26

ZXTC2045E6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C1 passive Collector of NPN transistor Q1, rated VCEO 30V, IC 1.5A continuous and ICM 5A peak.
2 B1 passive Base of NPN transistor Q1, with maximum base current IB of 1A.
3 C2 passive Collector of PNP transistor Q2, rated VCEO -30V, IC -1.5A continuous and ICM -5A peak.
4 E2 passive Emitter of PNP transistor Q2, with VEBO rating of -7V.
5 B2 passive Base of PNP transistor Q2, with maximum base current IB of -1A.
6 E1 passive Emitter of NPN transistor Q1, with VEBO rating of 7V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Q1 Collector-Base Voltage VCBO 40 V TA=+25°C 2
Q1 Collector-Emitter Voltage VCEV 40 V TA=+25°C 2
Q1 Collector-Emitter Voltage VCEO 30 V TA=+25°C 2
Q1 Emitter-Base Voltage VEBO 7 V TA=+25°C 2
Q1 Continuous Collector Current IC 1.5 A TA=+25°C 2
Q1 Peak Pulsed Collector Current ICM 5 A TA=+25°C 2
Q1 Base Current IB 1 A TA=+25°C 2
Q2 Collector-Base Voltage VCBO -40 V TA=+25°C 2
Q2 Collector-Emitter Voltage VCEV -40 V TA=+25°C 2
Q2 Collector-Emitter Voltage VCEO -30 V TA=+25°C 2
Q2 Emitter-Base Voltage VEBO -7 V TA=+25°C 2
Q2 Continuous Collector Current IC -1.5 A TA=+25°C 2
Q2 Peak Pulsed Collector Current ICM -5 A TA=+25°C 2
Q2 Base Current IB -1 A TA=+25°C 2
Power Dissipation PD 0.7 W Notes 6 & 10 (15x15mm 1oz Cu, one active die) 2
Power Dissipation PD 0.9 W Notes 7 & 10 2
Power Dissipation PD 1.1 W Notes 7 & 11 2
Power Dissipation PD 1.7 W Notes 9 & 10 2
Thermal Resistance, Junction to Ambient RθJA 179 °C/W Notes 6 & 10 2
Thermal Resistance, Junction to Ambient RθJA 139 °C/W Notes 7 & 10 2
Thermal Resistance, Junction to Ambient RθJA 113 °C/W Notes 7 & 11 2
Thermal Resistance, Junction to Ambient RθJA 73 °C/W Notes 9 & 10 2
Thermal Resistance, Junction to Lead RθJL 95.5 °C/W Note 12 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
ESD Machine Model ESD MM 400 V JEDEC Class C 2
Q1 Collector-Base Breakdown Voltage BVCBO 40 V IC = 100µA, IE = 0 4
Q1 Collector-Emitter Breakdown Voltage BVCEV 40 V IC = 1µA, 0.25V > VBE > 1.0V 4
Q1 Collector-Emitter Breakdown Voltage BVCEO 30 V IC = 10mA, IB = 0 4
Q1 Emitter-Base Breakdown Voltage BVEBO 7 8.3 V IE = 100µA, IC = 0 4
Q1 Collector Cut-Off Current ICBO 20 nA VCB = 32V 4
Q1 Emitter Cut-Off Current IEBO 20 nA VEB = 6V 4
Q1 DC Current Gain hFE 180 300 500 IC = 100mA, VCE = 2V 4
Q1 Collector-Emitter Saturation Voltage VCE(sat) 375 mV IC = 750mA, IB = 15mA 4
Q1 Base-Emitter Saturation Voltage VBE(sat) 1200 mV IC = 750mA, IB = 15mA 4
Q1 Output Capacitance Cobo 9 20 pF VCB = 10V, f = 1.0MHz 4
Q2 Collector-Base Breakdown Voltage BVCBO -40 V IC = -100µA, IE = 0 4
Q2 Collector-Emitter Breakdown Voltage BVCEV -40 V IC = -1µA, 0.25V < VBE < 1.0V 4
Q2 Collector-Emitter Breakdown Voltage BVCEO -30 V IC = -10mA, IB = 0 4
Q2 Emitter-Base Breakdown Voltage BVEBO -7 -8.3 V IE = -100µA, IC = 0 4
Q2 Collector Cut-Off Current ICBO -20 nA VCB = -32V 4
Q2 Emitter Cut-Off Current IEBO -20 nA VEB = -6V 4
Q2 DC Current Gain hFE 180 300 500 IC = -100mA, VCE = -2V 4
Q2 Collector-Emitter Saturation Voltage VCE(sat) -375 mV IC = -750mA, IB = -15mA 4
Q2 Base-Emitter Saturation Voltage VBE(sat) -1200 mV IC = -750mA, IB = -15mA 4
Q2 Output Capacitance Cobo 9 20 pF VCB = -10V, f = 1.0MHz 4
Q1 Current Gain-Bandwidth Product fT 265 MHz VCE = 10V, IC = 50mA, f = 100MHz 4
Q2 Current Gain-Bandwidth Product fT 195 MHz VCE = -10V, IC = -50mA, f = 100MHz 4
Q1 Delay Time td 10 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 50mA 4
Q1 Rise Time tr 12 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 50mA 4
Q1 Storage Time ts 185 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 50mA 4
Q1 Fall Time tf 45 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 50mA 4
Q2 Delay Time td 16 ns VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA 4
Q2 Rise Time tr 11 ns VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA 4
Q2 Storage Time ts 220 ns VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA 4
Q2 Fall Time tf 31 ns VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs Base Current IB 1 A Absolute Maximum Ratings, Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.) 2
contacts tin • Terminals: Finish, Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTC2045E6TA
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: zxtc2045e6ta-etched.step / zxtc2045e6ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtc2045e6ta.step / zxtc2045e6ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 2533c4e5f93a50cd, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF