# ZXT10P40DE6TA

**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-26

ZXT10P40DE6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector, tied to pins 2, 5 and 6; VCEO -40V, continuous IC -2A, peak ICM -4A. |
| 2 | C | passive | Collector, tied to pins 1, 5 and 6; VCBO -40V, VCEO -40V. |
| 3 | B | passive | Base; base current IB max -500mA, emitter-base voltage VEBO max -5V. |
| 4 | E | passive | Emitter of the PNP transistor; VEBO -5V maximum. |
| 5 | C | passive | Collector, tied to pins 1, 2 and 6; VCE(sat) typically -150mV at IC -1A, IB -100mA. |
| 6 | C | passive | Collector, tied to pins 1, 2 and 5; continuous IC -2A, peak ICM -4A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -40 | -80 |  | V | IC = -100μA | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | -40 | -70 |  | V | IC = -10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | -8.8 |  | V | IE = -100μA | 4 |
| Collector-Base Cut-Off Current | ICBO |  |  | -100 | nA | VCB = -35V | 4 |
| Emitter Cut-Off Current | IEBO |  |  | -100 | nA | VEB = -4V | 4 |
| Collector-Emitter Cut-Off Current | ICES |  |  | -100 | nA | VCES = -35V | 4 |
| DC Current Gain | hFE | 300 | 480 |  |  | IC = -10mA, VCE = -2V | 4 |
| DC Current Gain | hFE | 300 | 450 |  |  | IC = -100mA, VCE = -2V | 4 |
| DC Current Gain | hFE | 180 | 290 |  |  | IC = -1A, VCE = -2V | 4 |
| DC Current Gain | hFE | 60 | 130 |  |  | IC = -1.5A, VCE = -2V | 4 |
| DC Current Gain | hFE | 12 | 22 |  |  | IC = -3A, VCE = -2V | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | -25 | -40 | mV | IC = -100mA, IB = -10mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | -150 | -220 | mV | IC = -1A, IB = -100mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | -195 | -300 | mV | IC = -1.5A, IB = -100mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | -210 | -300 | mV | IC = -2A, IB = -200mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) |  | -0.95 | -1 | V | IC = -2A, IB = -200mA | 4 |
| Base-Emitter Turn-On Voltage | VBE(on) |  | -0.85 | -0.95 | V | IC = -2A, VCE = -2V | 4 |
| Current Gain-Bandwidth Product | fT | 150 | 190 |  | MHz | VCE = -10V, IC = -50mA, f = 100MHz | 4 |
| Output Capacitance | Cobo |  | 19 | 25 | pF | VCB = -10V, f = 1MHz | 4 |
| Collector-Base Voltage | VCBO |  |  | -40 | V |  | 2 |
| Collector-Emitter Voltage | VCEO |  |  | -40 | V |  | 2 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V |  | 2 |
| Base Current | IB |  |  | -500 | mA |  | 2 |
| Continuous Collector Current | IC |  |  | -2 | A |  | 2 |
| Peak Pulse Collector Current | ICM |  |  | -4 | A |  | 2 |
| Power Dissipation | PD |  |  | 1.1 | W | Note 5: 25mm x 25mm 1oz copper collector leads, single-sided 1.6mm FR4 PCB, still air, steady state | 2 |
| Power Dissipation | PD |  |  | 1.7 | W | Note 6: same as Note 5, t 5 seconds (symbol as extracted) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 113 | °C/W | Note 5: 25mm x 25mm 1oz copper, single-sided 1.6mm FR4 PCB, still air, steady state | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 73 | °C/W | Note 6: same as Note 5, t 5 seconds (symbol as extracted) | 2 |
| Thermal Resistance, Junction to Lead | RθJL |  |  | 18.61 | °C/W | Note 7: junction to solder point at end of collector leads | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM |  |  | 4000 | V | JEDEC Class 3A (JESD22-A114) | 2 |
| Electrostatic Discharge - Machine Model | ESD MM |  |  | 400 | V | JEDEC Class C (JESD22-A115) | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | tin |  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL￾STD-202, Method 208  Weight: 0.015 grams (Approximate) | 1 |

## CAD (KiCad official)

- Symbol: `ZXT10P40DE6TA`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files: `zxt10p40de6ta-etched.step` / `zxt10p40de6ta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxt10p40de6ta.step` / `zxt10p40de6ta.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/ZXT10P40DE6TA.pdf) (7 pp, sha256 `980dc716584fdd3c`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zxt10p40de6ta-datasheet.pdf)