component
ZXT10N15DE6TA
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| zxt10n15de6ta-etched.glb | 13d ago |
| zxt10n15de6ta-etched.step | 13d ago |
| zxt10n15de6ta-hero.glb | 13d ago |
| zxt10n15de6ta-hero.overlay.json | 13d ago |
| zxt10n15de6ta.glb | 13d ago |
| zxt10n15de6ta.kicad_mod | 13d ago |
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| zxt10n15de6ta.lbr | 13d ago |
| zxt10n15de6ta.step | 13d ago |
ZXT10N15DE6TA
Diodes Incorporated · Bipolar Transistors - BJT · SOT-26
ZXT10N15DE6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector, one of four collector leads tied together (pins 1, 2, 5, 6); VCEO 15V, IC 4A continuous, ICM 13A peak. |
| 2 | C | passive | Collector, one of four collector leads tied together (pins 1, 2, 5, 6); VCEO 15V, IC 4A continuous, ICM 13A peak. |
| 3 | B | passive | Base; VEBO 5V maximum and IB 500mA maximum. |
| 4 | E | passive | Emitter of the NPN transistor; VEBO 5V maximum relative to base. |
| 5 | C | passive | Collector, one of four collector leads tied together (pins 1, 2, 5, 6); VCEO 15V, IC 4A continuous, ICM 13A peak. |
| 6 | C | passive | Collector, one of four collector leads tied together (pins 1, 2, 5, 6); VCEO 15V, IC 4A continuous, ICM 13A peak. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 15 | 70 | V | IC = 100µA | 4 | |
| Collector-Emitter Breakdown Voltage | BVCEO | 15 | 18 | V | IC = 10mA | 4 | |
| Emitter-Base Breakdown Voltage | BVEBO | 5 | 8.2 | V | IE = 100µA | 4 | |
| Collector-Base Cutoff Current | ICBO | 100 | nA | VCB = 10V | 4 | ||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 4V | 4 | ||
| Collector-Emitter Cutoff Current | ICES | 100 | nA | VCES = 10V | 4 | ||
| DC Current Gain | hFE | 200 | 415 | IC = 10mA, VCE = 2V | 4 | ||
| DC Current Gain | hFE | 300 | 450 | IC = 0.2A, VCE = 2V | 4 | ||
| DC Current Gain | hFE | 200 | 320 | IC = 3A, VCE = 2V | 4 | ||
| DC Current Gain | hFE | 150 | 240 | IC = 5A, VCE = 2V | 4 | ||
| DC Current Gain | hFE | 80 | IC = 12A, VCE = 2V | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 8 | 14 | mV | IC = 100mA, IB = 10mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 70 | 100 | mV | IC = 1A, IB = 10mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 165 | 200 | mV | IC = 3A, IB = 50mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 230 | 260 | mV | IC = 4A, IB = 50mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.94 | 1 | V | IC = 4A, IB = 50mV | 4 | |
| Base-Emitter Turn-On Voltage | VBE(on) | 0.87 | 0.95 | V | IC = 4A, VCE = 2V | 4 | |
| Current Gain-Bandwidth Product | fT | 80 | 120 | MHz | VCE = 10V, IC = 50mA, f = 100MHz | 4 | |
| Output Capacitance | Cobo | 30 | 40 | pF | VCB = 10V, f = 1MHz | 4 | |
| Turn-On Time | t(on) | 120 | ns | VCC = 10V, IC = 3A | 4 | ||
| Turn-Off Time | t(off) | 160 | ns | IB1 = IB2 = 50mA | 4 | ||
| Collector-Base Voltage | VCBO | 15 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 15 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 5 | V | TA = +25°C | 2 | ||
| Base Current | IB | 500 | mA | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 4 | A | TA = +25°C | 2 | ||
| Peak Pulse Collector Current | ICM | 13 | A | TA = +25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Power Dissipation | PD | 1.1 | W | Note 5 | 2 | ||
| Power Dissipation | PD | 1.7 | W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 113 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 73 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 18.6 | °C/W | Note 7 | 2 | ||
| ESD HBM | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| ESD MM | ESD MM | 400 | V | JEDEC Class C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
ZXT10N15DE6TA - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
zxt10n15de6ta-etched.step/zxt10n15de6ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxt10n15de6ta.step/zxt10n15de6ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
088c828d39df39aa, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).