component
ZXMS6005N8-13
Public Made by Adomby adom
Diodes Incorporated Power Distribution Switches, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
ZXMS6005N8-13
Diodes Incorporated · Power Distribution Switches · SO-8
ZXMS6005N8-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the low-side IntelliFET MOSFET, connected to ground/return of the load circuit. |
| 2 | S | passive | Source of the low-side IntelliFET MOSFET, connected to ground/return of the load circuit. |
| 3 | S | passive | Source of the low-side IntelliFET MOSFET, connected to ground/return of the load circuit. |
| 4 | IN | input | Logic-level ESD-protected input driven from 3.3V or 5V logic; VIN range 0 to 5.5V, on above 3V (VIH) and off below 0.7V (VIL). |
| 5 | D | passive | Drain of the MOSFET with active clamp at 60V (typ 65V), connected to the load; continuous drain-source voltage 60V. |
| 6 | D | passive | Drain of the MOSFET with active clamp at 60V (typ 65V), connected to the load; continuous drain-source voltage 60V. |
| 7 | D | passive | Drain of the MOSFET with active clamp at 60V (typ 65V), connected to the load; continuous drain-source voltage 60V. |
| 8 | D | passive | Drain of the MOSFET with active clamp at 60V (typ 65V), connected to the load; continuous drain-source voltage 60V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input Voltage Range | VIN | 0 | 5.5 | V | 2 | ||
| Ambient Temperature Range | TA | -40 | 125 | °C | 2 | ||
| High Level Input Voltage for MOSFET to be On | VIH | 3 | 5.5 | V | 2 | ||
| Low Level Input Voltage for MOSFET to be Off | VIL | 0 | 0.7 | V | 2 | ||
| Peripheral Supply Voltage (Voltage to which Load is Referred) | VP | 0 | 24 | V | 2 | ||
| Continuous Drain-Source Voltage | VDS | 60 | V | 2 | |||
| Drain-Source Voltage for Short Circuit Protection | VDS(SC) | 24 | V | 2 | |||
| Continuous Input Voltage | VIN | -0.5 | 6 | V | 2 | ||
| Continuous Input Current | IIN | 2 | mA | VIN < -0.2V or VIN > 6V | 2 | ||
| Pulsed Drain Current | IDM | 5 | A | VIN = 3.3V | 2 | ||
| Pulsed Drain Current | IDM | 6 | A | VIN = 5V | 2 | ||
| Continuous Source Current (Body Diode) (Note 5) | IS | 2.5 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 10 | A | 2 | |||
| Unclamped Single Pulse Inductive Energy | EAS | 120 | mJ | TJ = +25°C, ID = 0.5A, VDD = 24V | 2 | ||
| Electrostatic Discharge (Human Body Model) | VHBM | 4000 | V | 2 | |||
| Charged Device Model | VCDM | 1000 | V | 2 | |||
| Power Dissipation @TA=+25°C (Note 5) | PD | 1.28 | W | Note 5: FR-4, 2oz copper, minimum recommended pad layout | 3 | ||
| Linear Derating Factor (Note 5) | PD | 10 | mW/°C | Note 5: FR-4, 2oz copper, minimum recommended pad layout | 3 | ||
| Power Dissipation @TA=+25°C (Note 6) | PD | 1.65 | W | Note 6: FR-4, 2oz copper, 1 inch square copper plate | 3 | ||
| Linear Derating Factor (Note 6) | PD | 12.4 | mW/°C | Note 6: FR-4, 2oz copper, 1 inch square copper plate | 3 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 98 | °C/W | Note 5: FR-4, 2oz copper, minimum recommended pad layout | 3 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 76 | °C/W | Note 6: FR-4, 2oz copper, 1 inch square copper plate | 3 | ||
| Thermal Resistance, Junction to Case (Note 7) | RθJC | 12 | °C/W | Note 7: junction to mounting surfaces of drain and source pins | 3 | ||
| Operating Temperature Range | TJ | -40 | 150 | °C | 3 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Clamp Voltage | VDS(AZ) | 60 | 65 | 70 | V | ID = 10mA | 4 |
| Off-State Drain Current | IDSS | 1 | μA | VDS = 12V, VIN = 0V | 4 | ||
| Off-State Drain Current | IDSS | 2 | μA | VDS = 36V, VIN = 0V | 4 | ||
| Input Threshold Voltage | VIN(TH) | 0.7 | 1 | 1.5 | V | VDS = VGS, ID = 1mA | 4 |
| Input Current | IIN | 60 | 100 | μA | VIN = 3V | 4 | |
| Input Current | IIN | 120 | 200 | μA | VIN = 5V | 4 | |
| Input Current while Overtemperature Active | IIN | 300 | μA | VIN = 5V | 4 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 170 | 250 | mΩ | VIN = 3V, ID = 1.0A | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 150 | 200 | mΩ | VIN = 5V, ID = 1.0A | 4 | |
| Continuous Drain Current (Note 5) | ID | 1.4 | A | VIN = 3V, TA = +25°C | 4 | ||
| Continuous Drain Current (Note 5) | ID | 1.6 | A | VIN = 5V, TA = +25°C | 4 | ||
| Continuous Drain Current (Note 6) | ID | 1.9 | A | VIN = 3V, TA = +25°C | 4 | ||
| Continuous Drain Current (Note 6) | ID | 2 | A | VIN = 5V, TA = +25°C | 4 | ||
| Current Limit (Note 8) | ID(LIM) | 2.2 | 5 | A | VIN = 3V | 4 | |
| Current Limit (Note 8) | ID(LIM) | 3.3 | 7 | A | VIN = 5V | 4 | |
| Thermal Overload Trip Temperature (Note 9) | TJT | 150 | 175 | °C | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Matte Tin Finish Weight: 80.2mg (Approximate) | 1 |
CAD (KiCad official)
- Symbol:
ZXMS6005N8-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
zxms6005n8-13-etched.step/zxms6005n8-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxms6005n8-13.step/zxms6005n8-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
38e9d286997c8249, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXMS6005N8-13
**Diodes Incorporated** · Power Distribution Switches · SO-8
ZXMS6005N8-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the low-side IntelliFET MOSFET, connected to ground/return of the load circuit. |
| 2 | S | passive | Source of the low-side IntelliFET MOSFET, connected to ground/return of the load circuit. |
| 3 | S | passive | Source of the low-side IntelliFET MOSFET, connected to ground/return of the load circuit. |
| 4 | IN | input | Logic-level ESD-protected input driven from 3.3V or 5V logic; VIN range 0 to 5.5V, on above 3V (VIH) and off below 0.7V (VIL). |
| 5 | D | passive | Drain of the MOSFET with active clamp at 60V (typ 65V), connected to the load; continuous drain-source voltage 60V. |
| 6 | D | passive | Drain of the MOSFET with active clamp at 60V (typ 65V), connected to the load; continuous drain-source voltage 60V. |
| 7 | D | passive | Drain of the MOSFET with active clamp at 60V (typ 65V), connected to the load; continuous drain-source voltage 60V. |
| 8 | D | passive | Drain of the MOSFET with active clamp at 60V (typ 65V), connected to the load; continuous drain-source voltage 60V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input Voltage Range | VIN | 0 | | 5.5 | V | | 2 |
| Ambient Temperature Range | TA | -40 | | 125 | °C | | 2 |
| High Level Input Voltage for MOSFET to be On | VIH | 3 | | 5.5 | V | | 2 |
| Low Level Input Voltage for MOSFET to be Off | VIL | 0 | | 0.7 | V | | 2 |
| Peripheral Supply Voltage (Voltage to which Load is Referred) | VP | 0 | | 24 | V | | 2 |
| Continuous Drain-Source Voltage | VDS | | | 60 | V | | 2 |
| Drain-Source Voltage for Short Circuit Protection | VDS(SC) | | | 24 | V | | 2 |
| Continuous Input Voltage | VIN | -0.5 | | 6 | V | | 2 |
| Continuous Input Current | IIN | | | 2 | mA | VIN < -0.2V or VIN > 6V | 2 |
| Pulsed Drain Current | IDM | | | 5 | A | VIN = 3.3V | 2 |
| Pulsed Drain Current | IDM | | | 6 | A | VIN = 5V | 2 |
| Continuous Source Current (Body Diode) (Note 5) | IS | | | 2.5 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 10 | A | | 2 |
| Unclamped Single Pulse Inductive Energy | EAS | | | 120 | mJ | TJ = +25°C, ID = 0.5A, VDD = 24V | 2 |
| Electrostatic Discharge (Human Body Model) | VHBM | | | 4000 | V | | 2 |
| Charged Device Model | VCDM | | | 1000 | V | | 2 |
| Power Dissipation @TA=+25°C (Note 5) | PD | | | 1.28 | W | Note 5: FR-4, 2oz copper, minimum recommended pad layout | 3 |
| Linear Derating Factor (Note 5) | PD | | | 10 | mW/°C | Note 5: FR-4, 2oz copper, minimum recommended pad layout | 3 |
| Power Dissipation @TA=+25°C (Note 6) | PD | | | 1.65 | W | Note 6: FR-4, 2oz copper, 1 inch square copper plate | 3 |
| Linear Derating Factor (Note 6) | PD | | | 12.4 | mW/°C | Note 6: FR-4, 2oz copper, 1 inch square copper plate | 3 |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | | | 98 | °C/W | Note 5: FR-4, 2oz copper, minimum recommended pad layout | 3 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | | | 76 | °C/W | Note 6: FR-4, 2oz copper, 1 inch square copper plate | 3 |
| Thermal Resistance, Junction to Case (Note 7) | RθJC | | | 12 | °C/W | Note 7: junction to mounting surfaces of drain and source pins | 3 |
| Operating Temperature Range | TJ | -40 | | 150 | °C | | 3 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 3 |
| Drain-Source Clamp Voltage | VDS(AZ) | 60 | 65 | 70 | V | ID = 10mA | 4 |
| Off-State Drain Current | IDSS | | | 1 | μA | VDS = 12V, VIN = 0V | 4 |
| Off-State Drain Current | IDSS | | | 2 | μA | VDS = 36V, VIN = 0V | 4 |
| Input Threshold Voltage | VIN(TH) | 0.7 | 1 | 1.5 | V | VDS = VGS, ID = 1mA | 4 |
| Input Current | IIN | | 60 | 100 | μA | VIN = 3V | 4 |
| Input Current | IIN | | 120 | 200 | μA | VIN = 5V | 4 |
| Input Current while Overtemperature Active | IIN | | | 300 | μA | VIN = 5V | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 170 | 250 | mΩ | VIN = 3V, ID = 1.0A | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 150 | 200 | mΩ | VIN = 5V, ID = 1.0A | 4 |
| Continuous Drain Current (Note 5) | ID | 1.4 | | | A | VIN = 3V, TA = +25°C | 4 |
| Continuous Drain Current (Note 5) | ID | 1.6 | | | A | VIN = 5V, TA = +25°C | 4 |
| Continuous Drain Current (Note 6) | ID | 1.9 | | | A | VIN = 3V, TA = +25°C | 4 |
| Continuous Drain Current (Note 6) | ID | 2 | | | A | VIN = 5V, TA = +25°C | 4 |
| Current Limit (Note 8) | ID(LIM) | 2.2 | 5 | | A | VIN = 3V | 4 |
| Current Limit (Note 8) | ID(LIM) | 3.3 | 7 | | A | VIN = 5V | 4 |
| Thermal Overload Trip Temperature (Note 9) | TJT | 150 | 175 | | °C | | 4 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Matte Tin Finish Weight: 80.2mg (Approximate) | 1 |
## CAD (KiCad official)
- Symbol: `ZXMS6005N8-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `zxms6005n8-13-etched.step` / `zxms6005n8-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxms6005n8-13.step` / `zxms6005n8-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589944182497443840) (8 pp, sha256 `38e9d286997c8249`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxms6005n8-13-datasheet.pdf)