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ZXMS6005DN8-13
Public Made by Adomby adom
Diodes Incorporated Power Distribution Switches, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownZXMS6005DN8-13
Diodes Incorporated · Power Distribution Switches · SOIC-8
ZXMS6005DN8-13 from Diodes Incorporated, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | power_in | Source of channel 1 (low-side, ground reference for channel 1). |
| 2 | IN1 | input | Logic-level input of channel 1, driven from 3.3V or 5V with VIH 3V to 5.5V for on and VIL 0V to 0.7V for off. |
| 3 | S2 | power_in | Source of channel 2 (low-side, ground reference for channel 2). |
| 4 | IN2 | input | Logic-level input of channel 2, driven from 3.3V or 5V with VIH 3V to 5.5V for on and VIL 0V to 0.7V for off. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Clamp Voltage | VDS(AZ) | 60 | 65 | 70 | V | ID = 10mA | 4 |
| Off-State Drain Current | IDSS | 1 | µA | VDS = 12V, VIN = 0V | 4 | ||
| Off-State Drain Current | IDSS | 2 | µA | VDS = 36V, VIN = 0V | 4 | ||
| Input Threshold Voltage | VIN(TH) | 0.7 | 1 | 1.5 | V | VDS = VGS, ID = 1mA | 4 |
| Input Current | IIN | 60 | 100 | µA | VIN = 3V | 4 | |
| Input Current | IIN | 120 | 200 | µA | VIN = 5V | 4 | |
| Input Current while Over-Temperature Active | 300 | µA | VIN = 5V | 4 | |||
| Static Drain-Source On-State Resistance | RDS(ON) | 170 | 250 | mΩ | VIN = 3V, ID = 1A | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 150 | 200 | mΩ | VIN = 5V, ID = 1A | 4 | |
| Continuous Drain Current (Note 5) | ID | 1.4 | A | VIN = 3V; TA = +25°C | 4 | ||
| Continuous Drain Current (Note 5) | ID | 1.6 | A | VIN = 5V; TA = +25°C | 4 | ||
| Continuous Drain Current (Note 6) | ID | 1.7 | A | VIN = 3V; TA = +25°C | 4 | ||
| Continuous Drain Current (Note 6) | ID | 1.8 | A | VIN = 5V; TA = +25°C | 4 | ||
| Current Limit (Note 8) | ID(LIM) | 2.2 | 5 | A | VIN = 3V | 4 | |
| Current Limit (Note 8) | ID(LIM) | 3.3 | 7 | A | VIN = 5V | 4 | |
| Thermal Overload Trip Temperature (Note 9) | TJT | 150 | 175 | °C | 4 | ||
| Continuous Drain-Source Voltage | VDS | 60 | V | 2 | |||
| Drain-Source Voltage For Short Circuit Protection | VDS(SC) | 16 | V | 2 | |||
| Continuous Input Voltage | VIN | -0.5 | 6 | V | 2 | ||
| Continuous Input Current | IIN | 2 | mA | -0.2V ≤ VIN ≤ 6V | 2 | ||
| Pulsed Drain Current | IDM | 5 | A | VIN = 3.3V | 2 | ||
| Pulsed Drain Current | IDM | 6 | A | VIN = 5V | 2 | ||
| Continuous Source Current (Body Diode) (Note 5) | IS | 2.5 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 10 | A | 2 | |||
| Unclamped Single Pulse Inductive Energy | EAS | 120 | mJ | TJ = +25°C, ID = 0.5A, VDD = 24V | 2 | ||
| Electrostatic Discharge (Human Body Model) | VHBM | 4000 | V | 2 | |||
| Charged Device Model | VCDM | 1000 | V | 2 | |||
| Input Voltage Range | VIN | 0 | 5.5 | V | 3 | ||
| Ambient Temperature Range | TA | -40 | 125 | °C | 3 | ||
| High Level Input Voltage for MOSFET to be On | VIH | 3 | 5.5 | V | 3 | ||
| Low Level Input Voltage for MOSFET to be Off | VIL | 0 | 0.7 | V | 3 | ||
| Peripheral Supply Voltage (Voltage to which load is referred) | VP | 0 | 16 | V | 3 | ||
| Operating Temperature Range | TJ | -40 | 150 | °C | 3 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 3 | ||
| Power Dissipation at TA = +25°C (Note 5) | PD | 1.21 | W | TA = +25°C, Note 5 | 3 | ||
| Linear Derating Factor (Note 5) | PD | 9.7 | mW/°C | Note 5 | 3 | ||
| Power Dissipation at TA = +25°C (Note 6) | PD | 1.56 | W | TA = +25°C, Note 6 | 3 | ||
| Linear Derating Factor (Note 6) | PD | 12.5 | mW/°C | Note 6 | 3 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 103 | °C/W | Note 5 | 3 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 81 | °C/W | Note 6 | 3 | ||
| Thermal Resistance, Junction to Case (Note 7) | RθJC | 13.5 | °C/W | Note 7 | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Matte Tin Finish Weight: 79.1mg (Approximate) | 1 |
CAD (KiCad official)
- Symbol:
ZXMS6005DN8-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
zxms6005dn8-13-etched.step/zxms6005dn8-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxms6005dn8-13.step/zxms6005dn8-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
68bad874bcfad21e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).